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    SOT23 REVERSE VOLTAGE 600V Search Results

    SOT23 REVERSE VOLTAGE 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    SOT23 REVERSE VOLTAGE 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mcr100-6 sot-23

    Abstract: mcr100g mcr100-6 sot23 MCR100L MCR100-8 SOT89 MCR100 MCR100-6 SCR 400 V 0,8 A MCR100G-6-x-T92-B marking a2s sot-23 sot89 scr
    Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V


    Original     		PDF MCR100 OT-89 OT-23 QW-R301-016 mcr100-6 sot-23 mcr100g mcr100-6 sot23 MCR100L MCR100-8 SOT89 MCR100 MCR100-6 SCR 400 V 0,8 A MCR100G-6-x-T92-B marking a2s sot-23 sot89 scr

    mcr100-6 sot-23

    Abstract: mcr100-6 sot mcr100-6 sot23 mcr100l-6 MCR100L MCR100-6 SCR 400 V 0,8 A MCR100-8 MCR100-8 SOT89 MCR100-6 circuit MCR100-6 AE3
    Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V


    Original     		PDF MCR100 OT-89 OT-23 QW-R301-016 mcr100-6 sot-23 mcr100-6 sot mcr100-6 sot23 mcr100l-6 MCR100L MCR100-6 SCR 400 V 0,8 A MCR100-8 MCR100-8 SOT89 MCR100-6 circuit MCR100-6 AE3

    Thyristors

    Abstract: MCR100L MCR100L-6 mcr100l-8 mcr100-6 sot-23 mcr100g sot89 scr mcr100-6 sot23 SCR 10A MCR100-6 SCR 400 V 0,8 A
    Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 SOT-89 SOT-23 1 TO-92 FEATURES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V


    Original     		PDF MCR100 OT-89 OT-23 QW-R301-016 Thyristors MCR100L MCR100L-6 mcr100l-8 mcr100-6 sot-23 mcr100g sot89 scr mcr100-6 sot23 SCR 10A MCR100-6 SCR 400 V 0,8 A

    Mcr100

    Abstract: mcr100-6 sot-23 MCR100-6 SCR 400 V 0,8 A scr mcr100-6 mcr100-6 sot23
    Text: UNISONICTECHNOLOGIESCO., LTD MCR100 SCR SEN SI T I V E GAT E SI LI CON CON T ROLLED RECT I FI ERS REV ERSE BLOCK I N G T H Y RI ST ORS ̈ 3 2 1 SOT-89 1 TO-92 FEAT U RES * Sensitive gate allows triggering by micro controllers and other logic circuits * Blocking voltage to 600V


    Original     		PDF MCR100 OT-89 OT-23 QW-R301-016 Mcr100 mcr100-6 sot-23 MCR100-6 SCR 400 V 0,8 A scr mcr100-6 mcr100-6 sot23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601 UF601 UF601G-AA3-R UF601G-AE3-R OT-223 OT-23 QW-R502-699

    DIODES K29

    Abstract: No abstract text available
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C • Low Input Capacitance High BVDss rating for power application 600V 160Ω @ VGS = 10V SC59 SOT23 • 70mA • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


    Original     		PDF BSS127 AEC-Q101 DS35476 DIODES K29

    BSS127S

    Abstract: K29 mosfet BSS127 K28 SOT23
    Text: BSS127 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C 600V 160Ω @ VGS = 10V SC59 SOT23 70mA • • • • • Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage


    Original     		PDF BSS127 DS35476 BSS127S K29 mosfet BSS127 K28 SOT23

    Untitled

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. AP2332GN-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS Small Package Outline Surface Mount Device G RoHS-compliant, Halogen-free 600V R DS ON 300Ω ID 27mA S Description D Advanced Power MOSFETs from APEC provide the designer with the best


    Original     		PDF AP2332GN-HF-3 AP2332GN-HF-3 OT-23 OT-23

    BSS127

    Abstract: marking D09 BSS127S
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits • • • • • ID RDS ON V(BR)DSS TA = 25°C 600V Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1)


    Original     		PDF BSS127 DS35476 BSS127 marking D09 BSS127S

    BSS127S

    Abstract: No abstract text available
    Text: BSS127 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits • • • • • ID RDS ON V(BR)DSS TA = 25°C 600V 160 Low Input Capacitance High BVDss rating for power application Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1)


    Original     		PDF BSS127 DS35476 BSS127S

    Untitled

    Abstract: No abstract text available
    Text: SMS501DE 0.03A , 600V , RDS ON 700Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free SOT-23 DESCRIPTION The SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SMS501DE OT-23 SMS501DE 501DE 28-Oct-2013

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET 3 „ DESCRIPTION 1 2 The UTC UF601 is an N-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.


    Original     		PDF UF601 UF601 OT-23 SC-59) UF601L-AE3-R UF601G-AE3-R QW-R502-699

    Untitled

    Abstract: No abstract text available
    Text: AP2332GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device S ▼ Halogen Free & RoHS Compliant Product SOT-23 BVDSS 600V RDS ON


    Original     		PDF AP2332GN-HF OT-23 100ms

    Untitled

    Abstract: No abstract text available
    Text: AP2332GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Small Package Outline Surface Mount Device S Halogen Free & RoHS Compliant Product SOT-23 BVDSS 600V RDS ON 300 ID 27mA G


    Original     		PDF AP2332GN-HF OT-23 OT-23

    MCR100L

    Abstract: mcr100-4
    Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS  3 2 1 SOT-223 SOT-23 DESCRIPTION PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor


    Original     		PDF MCR100 OT-223 OT-23 OT-89 QW-R301-016 MCR100L mcr100-4

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MCR100 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS „ 3 1 2 1 SOT-23 DESCRIPTION TO-92 1 PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls,


    Original     		PDF MCR100 OT-23 OT-89 QW-R301-016

    512-1N4750A

    Abstract: 512-1N4148WS 512-BAS19 rurg3020c SOT23 reverse voltage 600v MMSD4448 BAW74 BAS16HT1G SOD-80 1000V SOT-23 187
    Text: ZENER DIODES CONT. For quantities greater than listed, call for quote. For quantities greater than listed, call for quote. MOUSER STOCK NO. Mfr. Mfr. Part No. 512-1N4749AT50A 512-BZX85C24 512-1N4750A 512-1N4750ATR 512-1N4751A 512-1N4751ATR 512-BZX85C30 Package


    Original     		PDF 512-1N4749AT50A 512-BZX85C24 512-1N4750A 512-1N4750ATR 512-1N4751A 512-1N4751ATR 512-BZX85C30 DO-41 512-1N4750A 512-1N4148WS 512-BAS19 rurg3020c SOT23 reverse voltage 600v MMSD4448 BAW74 BAS16HT1G SOD-80 1000V SOT-23 187

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BSS127 Power MOSFET 0.021A, 600V SMALL-SIGNAL-TRANSISTOR  DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.


    Original     		PDF BSS127 BSS127 140nC) BSS127L-AE2-R BSS127G-AE2-R BSS127L-AE3-R BSS127G-AE3-R OT-23-3 OT-23 QW-R502-824

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601 UF601 UF601L-AE3-R UF601G-AE3-R OT-23 QW-R502-699

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601Q Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601Q UF601Q UF601QG-AE3-R UF601QG-AE2-R OT-23 OT-23-3 601QG QW-R502-A25 UF601at

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF601 Power MOSFET 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed.  FEATURES


    Original     		PDF UF601 UF601 UF601L-AE3-R UF601G-AE3-R UF601L-AE2-R UF601G-AE2-R OT-23 OT-23-3 QW-R502-699

    power BJT DARLINGTON PAIR NPN

    Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
    Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V


    Original     		PDF BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference

    reverse phase dimmer

    Abstract: of bel 187 transistor 120 volt dimmer circuit with triac bel 187 NPN TRANSISTOR detailed pinout of bel 187 transistor 220 volt dimmer circuit CREE Q5 Q8 LED Triac AC INRUSH CURRENT LIMITER 220 pwm dimmer SCHEMATIC dimmer 220 volts
    Text: National Semiconductor Application Note 1995 Tim Sullivan October 23, 2009 Introduction A supplied bill of materials describes the parts used on this demonstration board. A schematic and layout have also been included along with measured performance characteristics.


    Original     		PDF LM3445 AN-1995 reverse phase dimmer of bel 187 transistor 120 volt dimmer circuit with triac bel 187 NPN TRANSISTOR detailed pinout of bel 187 transistor 220 volt dimmer circuit CREE Q5 Q8 LED Triac AC INRUSH CURRENT LIMITER 220 pwm dimmer SCHEMATIC dimmer 220 volts

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28