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    SOT-32 BS Search Results

    SOT-32 BS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-32 BS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ATF-13136-TR1

    Abstract: transistor tag 306 MARK A1 SOT-143 sot-23 6121 ATF13136-TR1 Amplifier Micro-X "marking code" D
    Text: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-343, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to


    Original     		PDF OT-23, OT-143, OT-323, OT-343, OT-363, SSOP-16, TQFP-32, TQFP-48 RS481, OT-143 ATF-13136-TR1 transistor tag 306 MARK A1 SOT-143 sot-23 6121 ATF13136-TR1 Amplifier Micro-X "marking code" D

    ATF-13136-TR1

    Abstract: ATF13136 atf-13136 HPMX-5001 SSOP-16 TQFP-48 On semiconductor date Code sot-143 micro-x marking code E1 transistor tag 306
    Text: Tape and Reel Packaging for Semiconductor Devices Package Outlines 05, 08A, 36, 76, 84, 86, MSOP-3, SOIC-8, SOT-23, SOT-143, SOT-323, SOT-363, SSOP-16, TQFP-32, and TQFP-48 Technical Data Description Related Standard This data sheet is intended to cover standards on tape and reel


    Original     		PDF OT-23, OT-143, OT-323, OT-363, SSOP-16, TQFP-32, TQFP-48 RS481, OT-143 ATF-13136-TR1 ATF-13136-TR1 ATF13136 atf-13136 HPMX-5001 SSOP-16 TQFP-48 On semiconductor date Code sot-143 micro-x marking code E1 transistor tag 306

    BULT118

    Abstract: BULK118
    Text: BULK118 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BULK118 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE AND SAME PINS OUT Vs BULT118 SOT-32 PACKAGE STMicroelectronics PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS


    Original     		PDF BULK118 BULK118 OT-82 BULT118 OT-32 OT-82 BULT118

    SO930

    Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
    Text: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot


    Original     		PDF O-126/SOT-32 OT-223 OT-23 2N2857 2N5179 BFX89 BFR99A BFR99 BFW16A BFW17A SO930 SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40

    Transistor 834

    Abstract: MJE210 TRANSISTOR B 834
    Text: MJE210 SILICON PNP TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR DESCRIPTION The MJE210 is a silicon Epitaxial-Base PNP transistor in Jedec SOT-32 plastic package, designed for low voltage, low power, high gain audio amplifier applications.


    Original     		PDF MJE210 MJE210 OT-32 OT-32 Transistor 834 TRANSISTOR B 834

    MJE3440

    Abstract: sot-32 bs
    Text: MJE3440 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR • ■ DESCRIPTION The MJE3440 is a NPN silicon Epitaxial Planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.


    Original     		PDF MJE3440 MJE3440 OT-32 OT-32 sot-32 bs

    ST1803DFP

    Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
    Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D


    Original     		PDF OT-32 O-126 BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 ST1803DFP BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent

    2N5657

    Abstract: No abstract text available
    Text: 2N5657 SILICON NPN TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR • ■ DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays.


    Original     		PDF 2N5657 2N5657 OT-32 OT-32

    LTACQ

    Abstract: LTC6910-2 LTC6910-1 LTC6910-3 LTC6910-2CTS8 sot-23 marking code 352
    Text: Final Electrical Specifications LTC6910-2 Digitally Controlled Programmable Gain Amplifier in SOT-23 April 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 3-Bit Digital Gain Control 0, 1, 2, 4, 8, 16, 32 and 64V/V 8-Pin TSOT-23 Package


    Original     		PDF LTC6910-2 OT-23 TSOT-23 13MHz 120dB LTC6910-2 LT1251/LT1256 40MHz LTC1564 LTACQ LTC6910-1 LTC6910-3 LTC6910-2CTS8 sot-23 marking code 352

    LTC6910-2

    Abstract: LTC6910-1 LTC6910-3 LTACQ Automatic Gain Control LTC6910-2CTS8
    Text: Final Electrical Specifications LTC6910-2 Digitally Controlled Programmable Gain Amplifier in SOT-23 March 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO 3-Bit Digital Gain Control 0, 1, 2, 4, 8, 16, 32 and 64V/V 8-Pin TSOT-23 Package


    Original     		PDF LTC6910-2 OT-23 TSOT-23 13MHz 13nV/Hz 120dB LTC6910-2 LT1251/LT1256 40MHz LTC6910-1 LTC6910-3 LTACQ Automatic Gain Control LTC6910-2CTS8

    34063

    Abstract: led driver circuit 34063 34063 application note 34063 application INA-34063 34063 schematic led driver 34063 marking 34 sot-363 rf 18 sot-363 rf power amplifier a006
    Text: 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications


    Original     		PDF INA-34063 OT-363 SC-70) INA-34063 5967-5768E 34063 led driver circuit 34063 34063 application note 34063 application 34063 schematic led driver 34063 marking 34 sot-363 rf 18 sot-363 rf power amplifier a006

    34063

    Abstract: 34063 application note 34063 schematic 34063 Application Notes marking 34063 INA-34063 34063 circuit table
    Text: 3.0 GHz Medium Power Silicon RFIC␣ Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9␣ GHz • Single +3V Supply • Unconditionally Stable


    Original     		PDF INA-34063 OT-363 SC-70) INA-34063 OT-363 OT-143 5967-5768E 34063 34063 application note 34063 schematic 34063 Application Notes marking 34063 34063 circuit table

    34063 schematic

    Abstract: 34063 application note 34063 34063 application led driver circuit 34063 a006 ex 34063 led driver 34063 rfics marking 76 ANA004R
    Text: 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm P1 dB at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply • Unconditionally Stable Applications


    Original     		PDF INA-34063 OT-363 SC-70) INA-34063 5967-5768E 34063 schematic 34063 application note 34063 34063 application led driver circuit 34063 a006 ex 34063 led driver 34063 rfics marking 76 ANA004R

    Untitled

    Abstract: No abstract text available
    Text: TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 24 @ VGS = 4.5V 3 32 @ VGS = 2.5V 3 37 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM1412 OT-363 TSM1412CU6

    H7545

    Abstract: TR BC 817-25 BCV72 BCW31 BCW32 BCX20 BSS64 SOA05 70G45 B 250 C 100 K4
    Text: a 7 SCS-THOMSON M DÊKOltLiÊTnSOlifflDËi SURFACE MOUNT DEVICES GENERAL PURPOSE & INDUSTRIAL SOT 23 SOT 23 NPN GENERAL PURPOSE TRANSISTORS v CEO •c ptot hpE @ *C UJ VCBO >o Type V (mA) 50* 50* 50* 30* 30* 30* 80 80 50 50 50 30 30 30 30 30 50 50 32 60


    OCR Scan     		PDF BCX20 BSS64 SOA05 SQA06 H7545 TR BC 817-25 BCV72 BCW31 BCW32 70G45 B 250 C 100 K4

    Transistors bd 133

    Abstract: C 1972 transistor transistor IC BT 136 BD229 BD231 transistor IC BT 134 BD227 BD226 BD230 TRANSISTOR BD 137
    Text: BD227 BD229 BD231 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose pnp transistors in a SOT-32 plastic envelope especially recommended for television circuits. Their complements are BD226, 8D228 and BD230. QUICK REFERENCE DATA


    OCR Scan     		PDF BD227 BD229 BD231 OT-32 BD226, 8D228 BD230. BD229 Transistors bd 133 C 1972 transistor transistor IC BT 136 BD231 transistor IC BT 134 BD226 BD230 TRANSISTOR BD 137

    Untitled

    Abstract: No abstract text available
    Text: : S v m Se m i : 5YM5EMI SEMICONDUCTOR BCW61B SOT -23 Plastic Encapsulate Transistors TRANSISTOR PNP FEATURES Power dissipation PCM : 0.25 Collector current Icm : W -0.2 (Tamb=25 °C) A Collector base voltage V ( b r )cbo : ~32 V Operating and storage junction temperature range


    OCR Scan     		PDF BCW61B OT-23 950TPY 550REF 037TPY 022REF

    BCW65C

    Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A


    OCR Scan     		PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 BCW65C FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P

    ex 34063

    Abstract: 34063 schematic 34063 application note
    Text: W hot HEWLETT mLEM PACKARD 3.0 GHz Medium Power Silicon RFIC Amplifier Technical Data INA-34063 Features • +8 dBm Pj ¿3 at 1.9 GHz Surface Mount SOT-363 SC-70 Package • 21 dB Gain at 1.9 GHz • High Isolation 32 dB at 1.9 GHz • Single +3V Supply


    OCR Scan     		PDF INA-34063 OT-363 SC-70) INA-34063 OT-363 OT-143 5967-5768E ex 34063 34063 schematic 34063 application note

    Untitled

    Abstract: No abstract text available
    Text: BF457 to BF459 J v _ SILICON PLANAR TRANSISTORS fo r vid e o o u tp u t stages N-P-N transistors in a SOT-32 plastic package intended for video output stages in black-and-white and in colour television receivers. Q UICK R E F E R E N C E DATA


    OCR Scan     		PDF BF457 BF459 OT-32 BF458 BF459 OT-32)

    B 1403 N

    Abstract: No abstract text available
    Text: M lC O N D U C T O R tm MMBD1401 /1403 /1404 /1405 MARKING SOT-23 MMBD1401 M M BD 1403 29 32 M M BD 1404 M M BD 1405 33 34 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol


    OCR Scan     		PDF MMBD1401 OT-23 B 1403 N

    1403

    Abstract: R20 marking MMBD1401 MMBD1404 MMBD1405 UMBD1403 M3325
    Text: MMBD1401 /1403 /1404 /1405 Discrete POWER & Signal Technologies Na t i o n a l Semiconductor & M M B D 1 401 / 1 4 0 3 7 1 4 0 4 / 1 4 0 5 JH 29 m et MARKING MMBD1401 29 MMBD1404 33 MMBD1403 32 MMBD1405 34 SOT-23 High Voltage General Purpose Diode Sourced from Process 1H.


    OCR Scan     		PDF MMBD1401 OT-23 MMBD1404 UMBD1403 MMBD1405 b50113D 1403 R20 marking M3325

    transistor BD 378

    Abstract: BD140 pnp transistor BD136 transistors bd136 bd136 N bd140
    Text: BD136 BD138 BD140 SILICON PLANAR EPITAXIAL POWER TRANSISTORS General purpose p-n-p transistors in SOT-32 plastic package, recom m ended fo r d river stages in h i-fi am p lifiers and television circuits. The BD 135, BD 137 and BD 139 are co m p le m e n tary to the B D 136, BD 138 and B D 140 respectively.


    OCR Scan     		PDF BD136 BD138 BD140 OT-32 BD140 transistor BD 378 BD140 pnp transistor transistors bd136 bd136 N

    BD226

    Abstract: T-33-07 C 1972 transistor BD227 BD228 BD230 BD229 BD231 3307 jnib
    Text: _ PHILI P S I N T E R N A T I O N A L BD226 BD228 BD230 J m SbE ]> 711DflEti 004EA314 ^37 • P H I N SILICON PLANAR EPITAXIAL POWER TRANSISTORS T~ 3 3 - 0 7 G en eral purpose n -p-n tra n sisto r s in a SOT-32 p lastic envelope esp ecially recom m ended


    OCR Scan     		PDF BD226 BD228 BD230 T-33-07 OT-32 BD227, BD229 BD231. C 1972 transistor BD227 BD231 3307 jnib