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    SOT-25 MARKING Search Results

    SOT-25 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-25 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c 5586

    Abstract: TSC 7211 marking 651 sot26 TS9004 transistor 15478 A 68067 8467 transistor
    Text: TS9004 300 mA CMOS LDO Adjustable Output Voltages SOT-25 SOT-26 General Description The TS9004 family of positive, linear regulators feature low ground current 35µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-26 and SOT-25


    Original     		PDF TS9004 OT-25 OT-26 TS9004 OT-26 300mA OT-25 transistor c 5586 TSC 7211 marking 651 sot26 transistor 15478 A 68067 8467 transistor

    A007

    Abstract: cob ic marking a007 2SA1980 2SC5343 SUT464M TRANSISTOR marking code X4 MARKING X4
    Text: SUT464M Semiconductor NPN/PNP Epitaxial Planar Silicon Transistor Descriptions • General purpose transistor Features • Both 2SA1980 chip and 2SC5343 chip in SOT-25 package Ordering Information Type NO. SUT464M Marking X4 Package Code SOT-25 Outline Dimensions


    Original     		PDF SUT464M 2SA1980 2SC5343 OT-25 OT-25 KST-A007-001 A007 cob ic marking a007 SUT464M TRANSISTOR marking code X4 MARKING X4

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD914LT1 SOT-23 SWITCHING DIODES FEATURES Power Dissipation PD : 225 mW（Tamb=25℃） MARKING: 5D Maximum Ratings @TA=25 Parameter Symbol Peak Repetitive Peak reverse voltage


    Original     		PDF OT-23 MMBD914LT1 OT-23 150mA

    transistor y21 sot-23

    Abstract: No abstract text available
    Text: M8550 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Power dissipation MARKING: Y21 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25


    Original     		PDF M8550 OT-23 OT-23 -100A -100A, -100mA -800mA -800mA, -80mA transistor y21 sot-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SCHOTTKY DIODES SOT-23 FEATURES Power Dissipation PD : 200 mW（Tamb=25℃） BAT54 MARKING: KL1 BAT54A MARKING: KL2 BAT54C MARKING: KL3 BAT54S MARKING: KL4 Maximum Ratings @TA=25


    Original     		PDF OT-23 BAT54/A/C/S OT-23 BAT54 BAT54A BAT54C BAT54S 100mA

    BC807

    Abstract: BC807-40 16 transistor sot23
    Text: BC807-16 BC807-25 BC807-40 SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — Ldeally suited for automatic insertion — epitaxial planar die construction — complementary NPN type available(BC817) MARKING: 807-16:5A; 807-25:5B; 807-40:5C


    Original     		PDF BC807-16 BC807-25 BC807-40 OT-23 OT-23 BC817) -500mA, -50mA BC807 BC807-40 16 transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST3904 TRANSISTOR NPN SOT–323 FEATURES  Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit


    Original     		PDF OT-323 MMST3904 MMST3906 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST3906 TRANSISTOR PNP SOT–323 FEATURES  Complementary to MMST3904 MARKING:K5N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		PDF OT-323 MMST3906 MMST3904 -10mA -10mA, -50mA, 100MHz

    marking e1 diode

    Abstract: marking d6 DIODE marking A2 Diode d4 marking 5h marking E1 MMBD4148A MMBD4148CA MMBD4148CC MMBD4148SE
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes MMBD4148A/SE/CC/CA SWITCHING DIODE SOT—23 FEATURES MMBD4148A Marking:5H MMBD4148CA Marking:D6 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage


    Original     		PDF OT-23 MMBD4148A/SE/CC/CA OT--23 MMBD4148A MMBD4148CA MMBD4148CC MMBD4148SE 751MHz 037TPY marking e1 diode marking d6 DIODE marking A2 Diode d4 marking 5h marking E1

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMSTA42 TRANSISTOR NPN SOT-323 FEATURES 1. BASE 2. EMITTER Power dissipation PCM : 0.35 W (Tamb=25℃) 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-323 MMSTA42 OT-323 MMSTA42 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42LT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation PCM : 0.35 W (Tamb=25℃) 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF OT-23 MMBTA42LT1 OT-23 MMBTA42LT1 30MHz MMBTA42LTI

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST3904 TRANSISTOR NPN SOT–323 FEATURES  Complementary to MMST3906 MARKING:K2N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit


    Original     		PDF OT-323 MMST3904 MMST3906 100MHz

    2SC5343 equivalent

    Abstract: SUT460M marking code sot-25 equivalent for 2SC5343 2SC5343 sot-25 marking
    Text: SUT460M Epitaxial planar NPN silicon transistor Descriptions • Complex type bipolar transistor Features • Reduce quantity of parts and mounting cost • High collector power dissipation : PC=300mW Max. • Two 2SC5343 chips in SOT-25 Package Package : SOT-25


    Original     		PDF SUT460M 300mW 2SC5343 OT-25 OT-25 KSD-T5O001-001 2SC5343 equivalent SUT460M marking code sot-25 equivalent for 2SC5343 sot-25 marking

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR PNP FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol


    Original     		PDF OT-23 OT-23 2SB709A -10oltage -10mA 200MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4403 TRANSISTOR PNP SOT–323 FEATURES  Complementary To MMST4401  Small Surface Mount Package MARKING:K3T MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-323 MMST4403 MMST4401 -10mA -500mA -150mA -150mA, -15mA -500mA, -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR NPN SOT-23 FEATURES Switching transistor 1. BASE 2. EMITTER MARKING: MMBT4401=2X 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 MMBT4401 OT-23 MMBT4401 -55to 150mA 150mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMSTA56 TRANSISTOR PNP SOT–323 FEATURES  Small Surface Mount Package  General Poupose for Amplification MARKING:K2G MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-323 MMSTA56 -100mA, -10mA -100mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT5550 TRANSISTOR NPN SOT–23 FEATURES  High Voltage Transistor MARKING:M1F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value Unit


    Original     		PDF OT-23 MMBT5550

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes BAS40 SERIES SOT—23 SCHOTTKY DIODE FEATURES BAS40 Marking:43 BAS40-04 Marking:44 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage


    Original     		PDF OT-23 BAS40 BAS40-04 BAS40-05 BAS40-06 037TPY 950TPY 550REF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4401 TRANSISTOR NPN SOT–323 FEATURES  Complementary to MMST4403  Small Surface Mount Package MARKING: K3X MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-323 MMST4401 MMST4403 500mA 150mA 150mA, 500mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT493 TRANSISTOR NPN SOT–23 FEATURES  Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 1. BASE Value


    Original     		PDF OT-23 FMMT493 FMMT593 500mA, 100mA 250mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT3904T TRANSISTOR NPN FEATURES  Complementary to MMBT3906T  Small Package SOT–523 MARKING:1N MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-523 MMBT3904T MMBT3906T 100MHz

    MMBT4403

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR PNP FEATURES Switching transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING ：MMBT4403=2T MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 MMBT4403 -100A -100A, -150mA -150mA, -15mA 150mA,

    scr stud

    Abstract: J495
    Text: TYPE MATERIAL PLASTIC METAL GLASS Case TO 92 SOT 223 SOT 82 SOT 194 ISOWATT 220 SMD U HOLE U Type HOLE U HOLE U SMD U HOLE 1 1 HOLE l/U 25-40 l/U T0220 AB RD 91 25-55 HOLE HOLE TOP 3 50-70 SCREW * 25-50 STUD STUD 1 ISOTOP TO 48 60-63 STUD TO 65 TO 64 DO 35


    OCR Scan     		PDF T0220 scr stud J495