Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SILICON PNP TRANSISTOR Search Results

    SILICON PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original
    PDF BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with


    Original
    PDF 2SA1694 2SA1694 2SA1694L-x-T3P-T 2SA1694G-x-T3P-T 2SA1694L-x-T3N-T 2SA1694G-x-T3N-T QW-R214-016

    2sa1694

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with


    Original
    PDF 2SA1694 2SA1694 2SA1694L-x-T3P-T 2SA1694G-x-T3P-T 2SA1694L-x-T3N-T 2SA1694G-x-T3N-T QW-R214-016

    BD140 pnp transistor

    Abstract: TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original
    PDF BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 BD140 pnp transistor TRANSISTOR NPN BD140 BD136 BD140 npn TRANSISTOR PNP BD140 BD140 transistor bd138 TRANSISTOR BD140 BD138 BD140 circuits

    BD139

    Abstract: BD136 of ic BD140 BD140 pnp transistor transistor bd136 BD138 BD140 of transistor BD140 OF TRANSISTOR bd138 transistor BD138
    Text: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original
    PDF BD136/138/140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 BD136 BD138 BD140 BD139 BD136 of ic BD140 BD140 pnp transistor transistor bd136 BD138 BD140 of transistor BD140 OF TRANSISTOR bd138 transistor BD138

    2sB101

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. „ FEATURES * Low base drive


    Original
    PDF 2SB1017 2SB1017 2SB1017L-x-TF3-T 2SB1017G-x-TF3-T 2SB1017L-x-TF3-T O-220F QW-R219-010 2sB101

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high


    Original
    PDF 2SA1693 2SA1693 2SA1693L-x-T3P-T 2SA1693G-x-T3P-T QW-R214-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1693 Preliminary PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2SA1693 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with high


    Original
    PDF 2SA1693 2SA1693 2SA1693L-x-T3P-T 2SA1693G-x-T3P-T QW-R214-017

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB647 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL  DESCRIPTION The UTC 2SB647 is a PNP epitaxial silicon transistor, which can be used as a low frequency power amplifier.  APPLICATION * Low frequency power amplifier


    Original
    PDF 2SB647 2SB647 2SB647L-x-T9N-B 2SB647G-x-T9N-B 2SB647L-x-T9N-K 2SB647G-x-T9N-K O-92NL QW-R211-010

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP1620 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON POWER TRANSISTOR  DESCRIPTION The UTC UP1620 is a silicon PNP silicon power transistor, it uses UTC’s advanced technology to provide the customers with high collector-emitter breakdown voltage and ultra-high DC current


    Original
    PDF UP1620 UP1620 UP1620L-x-T3P-T UP1620G-x-T3P-T QW-R214-025

    insulator nec

    Abstract: 2sb772 nec 2SB772 all ic books in transistor 3569
    Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original
    PDF 2SB772 2SB772 insulator nec 2sb772 nec all ic books in transistor 3569

    BD138G

    Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR „ DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original
    PDF BD136-138-140 O-251 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126 O-251 BD138G BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l

    2SA1836

    Abstract: audio Silicon PNP Power nte
    Text: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA1836 is PNP silicon epitaxial transistor. 0.1 +0.1 –0.05 0.3 ± 0.05 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage


    Original
    PDF 2SA1836 2SA1836 audio Silicon PNP Power nte

    BCP68

    Abstract: BCP69T1 BCP69T3
    Text: ON Semiconductort BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original
    PDF BCP69T1 OT-223 BCP69T1/D BCP68 BCP69T1 BCP69T3

    2SB772 by Nec

    Abstract: 2SB772 Nec 2SB772
    Text: DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver.


    Original
    PDF 2SB772 2SB772 2SB772 by Nec 2SB772 Nec

    2SA1836

    Abstract: SC-75 D1561
    Text: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SA1836 PNP SILICON EPITAXIAL TRANSISTOR PACKAGE DRAWING Unit: mm DESCRIPTION The 2SA1836 is PNP silicon epitaxial transistor. 0.15 +0.1 –0.05 0.3 +0.1 –0 FEATURES • High voltage: VCEO = −50 V • Can be automatically mounted


    Original
    PDF 2SA1836 2SA1836 SC-75 SC-75 D1561

    2n2955

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


    Original
    PDF 2N2955 2N2955 2N2955L-T30-Y QW-R205-004

    2N2955

    Abstract: 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS „ DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.


    Original
    PDF 2N2955 2N2955 2N2955L-T30-Y QW-R205-004 2N295 "PNP Transistor" 2n2955 2n2955 Power Transistor PNP

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original
    PDF 2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  DESCRIPTION 1 The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original
    PDF BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-251 OT-223 O-126 O-126C BD136L-xx-T60-K BD136G-xx-T60-K

    transistor BD140

    Abstract: power transistor bd136 to126 case transistor bd136
    Text: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  1 DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original
    PDF BD136-138-140 BD136/BD138/BD140 BD135/BD137/ BD139. O-126 O-126C BD136L-x-T60-K BD136G-x-T60-K BD136L-x-TM3-T transistor BD140 power transistor bd136 to126 case transistor bd136

    2sa1013

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original
    PDF 2SA1013 2SA1013 2SA1013L-x-AB3-R 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.


    Original
    PDF 2SA1013 2SA1013 2SA1013G-x-AB3-R 2SA1013L-x-T92-B 2SA1013G-x-T92-B 2SA1013L-x-T92-K 2SA1013G-x-T92-K 2SA1013L-x-T9N-B 2SA1013G-x-T9N-B

    2SA1424

    Abstract: No abstract text available
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and


    OCR Scan
    PDF NE327 NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IS12I 2SA1424