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    SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Search Results

    SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SILICON EPITAXIAL PLANAR TRANSISTOR PHILIPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    epsilam 10

    Abstract: BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors December 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original     		PDF LFE18500X epsilam 10 BY239 MLC431 BDT91 LFE18500X SC15 erie 1250-003 diode BY239 iw16

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original     		PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    BLV91

    Abstract: ferroxcube 1988 mda406 MDA401
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in


    Original     		PDF BLV91/SL OT-172D) BLV91 ferroxcube 1988 mda406 MDA401

    transistor D 2578

    Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting


    Original     		PDF BLW90 SC08a transistor D 2578 BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook

    BLX94C

    Abstract: MBH100 BLX94
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLX94C UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor BLX94C FEATURES DESCRIPTION • Withstands full load mismatch NPN silicon planar epitaxial transistor primarily intended


    Original     		PDF BLX94C OT122A OT122A BLX94C MBH100 BLX94

    MDA337

    Abstract: 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU60/12 UHF power transistor Product specification March 1986 Philips Semiconductors Product specification UHF power transistor BLU60/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope


    Original     		PDF BLU60/12 OT-119 MDA337 2395 transistor GP605 class b power transistors datasheet current gain sot-119 b1w3

    MDA342

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU45/12 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor BLU45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor in SOT-119 envelope


    Original     		PDF BLU45/12 OT-119 MDA342

    Philips 4312 020

    Abstract: blv75
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV75/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLV75/12 OT-119) Philips 4312 020 blv75

    mda324

    Abstract: MDA325 transistor D 2395 4313-020-15170 MDA327
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU30/12 UHF power transistor Product specification January 1985 Philips Semiconductors Product specification UHF power transistor BLU30/12 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU30/12 OT-119) mda324 MDA325 transistor D 2395 4313-020-15170 MDA327

    122d transistor

    Abstract: SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLU11/SL OT-122D) 122d transistor SL 100 NPN Transistor MDA309 122d SL 100 NPN Transistor base emitter collector

    transistor D 2395

    Abstract: BLV45/12
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV45/12 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		PDF BLV45/12 OT-119) transistor D 2395 BLV45/12

    TRIMMER cap no-2222 809 07015

    Abstract: 702 P TRANSISTOR BLV25 702 TRANSISTOR transistor Common Base configuration transistor w 04 59 VHF transmitter circuit rf transmitter* vhf philips blv25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial


    Original     		PDF BLV25 SC08a TRIMMER cap no-2222 809 07015 702 P TRANSISTOR BLV25 702 TRANSISTOR transistor Common Base configuration transistor w 04 59 VHF transmitter circuit rf transmitter* vhf philips blv25

    d 331 transistor 1080

    Abstract: bly87c MSB056
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLY87C VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,


    Original     		PDF BLY87C SC08a d 331 transistor 1080 bly87c MSB056

    Untitled

    Abstract: No abstract text available
    Text: • 0025^82 741 ■ APX N AMER PHILIPS/DISCRETE PXT4403 L7E » yv SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for linear switching applications. The complementary type is PXT4401.


    OCR Scan     		PDF PXT4403 PXT4401.

    PMBT4401

    Abstract: No abstract text available
    Text: • bbS3T31 OOaSAbT 327 H A P X N AMER PHILIPS/DISCRETE PMBT4401 b7E ]> SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended for use in linear, switching, and general purpose applications.


    OCR Scan     		PDF bbS3T31 PMBT4401 OT-23 PMBT4403. OT-23 PMBT4401

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bTE D bb53T31 DQE7T15 Til APX BSX32 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in a TO-39 encapsulation. The BSX32 is designed fo r use in high current switching applications. QUICK REFERENCE DATA


    OCR Scan     		PDF bb53T31 DQE7T15 BSX32 BSX32

    PMBT4401

    Abstract: D025 PMBT4403
    Text: •I bfc.SB'ÌBl GÜESB75 ill ■ APX N AMER PHILIPS/DISCRETE PMBT4403 b7E » _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended fo r use in linear, switching and general purpose applications.


    OCR Scan     		PDF PMBT4403 OT-23 PMBT4401. OT-23 PMBT4401 D025 PMBT4403

    Untitled

    Abstract: No abstract text available
    Text: bbS3T31 QQE5T70 TET H A P X N AMER PHILIPS/DISCRETE PXT2907/A b?E D SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended fo r switching and linear applications. The complementary type is PXT2222/A.


    OCR Scan     		PDF bbS3T31 QQE5T70 PXT2907/A PXT2222/A. PXT2907 PXT2907A

    PMBT4401

    Abstract: No abstract text available
    Text: • t.fc.S3T31 QQ25fl72 ^11 « A P X N AUER PHILIPS/DISCRETE b7E » PMBT4403 J V SILICON PLANAR EPITAXIAL TRANSISTOR PNP silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended for use in linear, switching and general purpose applications.


    OCR Scan     		PDF S3T31 QQ25fl72 PMBT4403 OT-23 PMBT4401. OT-23 PMBT4401

    Untitled

    Abstract: No abstract text available
    Text: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.


    OCR Scan     		PDF XT2222/A PXT2907/A. PXT2222 PXT2222A x10-4

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE » bb53^31 0D26D50 775 • APX PN2369 PN2369A SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in plastic TO-92 envelope intended fo r switching applications. Q UICK REFERENCE D A T A Collector-em itter voltage


    OCR Scan     		PDF 0D26D50 PN2369 PN2369A bbS3T31

    transistor tic 106

    Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
    Text: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has


    OCR Scan     		PDF BLV935 OT273 OT273 OT273. 110fl2ti transistor tic 106 Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor

    p2x transistor

    Abstract: PMBT4401 sot-23 marking 7z sot-23 Marking LG PMBT4403 pmbt4401 p2x transistor marking code p2x
    Text: • □oasab's 32? h a p x N AMER PHILIPS/DISCRETE PMBT4401 b7E i> SILICON PLANAR EPITAXIAL TRANSISTOR N P N silicon planar ep itax ial transistor, housed in a S O T -2 3 envelope. I t is intended fo r use in linear, switching, and general purpose applications.


    OCR Scan     		PDF PMBT4401 OT-23 PMBT4403. OT-23 p2x transistor PMBT4401 sot-23 marking 7z sot-23 Marking LG PMBT4403 pmbt4401 p2x transistor marking code p2x

    Philips 2222 050 capacitor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


    OCR Scan     		PDF BFG135 OT223 MSB002 OT223. 711062b 110fi2b 711Da2b Philips 2222 050 capacitor