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Vishay Siliconix SI1401EDH-T1-GE3 MOSFET P-CH 12V 4A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1401EDH-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
New Advantage Corporation	SI1401EDH-T1-GE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.14	Buy Now
Vishay Siliconix SI1403BDL-T1-GE3 MOSFET P-CH 20V 1.5A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1403BDL-T1-GE3	Cut Tape	11,687		1	1 $0.78 10 $0.486 100 $0.78 1000 $0.21536 10000 $0.21536	Buy Now
	SI1403BDL-T1-GE3	Digi-Reel	11,687		1	1 $0.78 10 $0.486 100 $0.78 1000 $0.21536 10000 $0.21536	Buy Now
	SI1403BDL-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1849	Buy Now
Vishay Siliconix SI1403BDL-T1-BE3 MOSFET P-CH 20V 1.4A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1403BDL-T1-BE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.18624	Buy Now
	SI1403BDL-T1-BE3	Digi-Reel	6,000		1	1 $0.79 10 $0.489 100 $0.79 1000 $0.21688 10000 $0.21688	Buy Now
	SI1403BDL-T1-BE3	Cut Tape	6,000		1	1 $0.79 10 $0.489 100 $0.79 1000 $0.21688 10000 $0.21688	Buy Now
Vishay Siliconix SI1403BDL-T1-E3 MOSFET P-CH 20V 1.4A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1403BDL-T1-E3	Cut Tape	4,588		1	1 $0.79 10 $0.489 100 $0.79 1000 $0.21688 10000 $0.21688	Buy Now
	SI1403BDL-T1-E3	Digi-Reel	4,588		1	1 $0.79 10 $0.489 100 $0.79 1000 $0.21688 10000 $0.21688	Buy Now
	SI1403BDL-T1-E3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.18624	Buy Now
ES Components	SI1403BDL-T1-E3					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SI1401EDH-T1-BE3 MOSFET P-CH 12V 4A/4A SC70-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI1401EDH-T1-BE3	Digi-Reel	2,000		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now
	SI1401EDH-T1-BE3	Cut Tape	2,000		1	1 $0.66 10 $0.409 100 $0.66 1000 $0.1783 10000 $0.1783	Buy Now

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SI140 Datasheets (40)

Part	Manufacturer	Description	Datasheet Type	PDF
Si1400DL	Vishay Intertechnology	N-Channel 20-V (D-S) MOSFET	Original	PDF
SI1400DL	Vishay Siliconix	N-Channel 20-V (D-S) MOSFET	Original	PDF
Si1400DL SPICE Device Model	Vishay	N-Channel 20-V (D-S) MOSFET	Original	PDF
SI1400DL-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC70-6	Original	PDF
SI1400DL-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 1.6A SC-70-6	Original	PDF
SI1401EDH-T1-BE3	Vishay Siliconix	MOSFET P-CH 12V 4A/4A SC70-6	Original	PDF
SI1401EDH-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 4A SC-70-6	Original	PDF
SI1402DH	Vishay Siliconix	N-Channel 30-V (D-S) MOSFET	Original	PDF
SI1402DH-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363	Original	PDF
SI1402DH-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.7A SOT363	Original	PDF
SI1403BDL-T1-BE3	Vishay Siliconix	MOSFET P-CH 20V 1.4A SC70-6	Original	PDF
SI1403BDL-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 1.4A SC70-6	Original	PDF
SI1403BDL-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 1.5A SC70-6	Original	PDF
SI1403CDL-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.1A SC-70-6	Original	PDF

Si1403DL	Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI1403DL	Vishay Siliconix	MOSFETs	Original	PDF
SI1403DL-DS	Vishay Telefunken	DS-Spice Model for Si1403DL	Original	PDF
Si1403DL SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI1403DL-T1	Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI1404BDH-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1.9A SOT363	Original	PDF

SI140 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si1405DL Abstract: No abstract text available Text: Si1405DL Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.125 at VGS = - 4.5 V ± 1.8 0.160 at VGS = - 2.5 V ± 1.6 0.210 at VGS = - 1.8 V ± 1.4 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si1405DL 2002/95/EC OT-363 SC-70 Si1405DL-T1-E3 Si1405DL-T1-GE3 18-Jul-08
Si1406DH Abstract: No abstract text available Text: Si1406DH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 0.075 @ VGS = 2.5 V 3.6 0.096 @ VGS = 1.8 V 3.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package	Original	PDF	Si1406DH SC-70 OT-363 SC-70 S-04475--Rev. 13-Aug-01
Qrr20 Abstract: No abstract text available Text: Si1403BDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.150 @ VGS = −4.5 V −1.5 0.175 @ VGS = −3.6 V −1.4 0.265 @ VGS = −2.5 V −1.2 D TrenchFETr Power MOSFET Qg (Typ) 2.9 SOT-363	Original	PDF	Si1403BDL OT-363 SC-70 Si1403BDL-T1--E3 S-50137--Rev. 24-Jan-05 Qrr20
TB-17 Abstract: No abstract text available Text: New Product Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS	Original	PDF	Si1405BDH OT-363 SC-70 Si1405BDH-T1-E3 08-Apr-05 TB-17
74888 Abstract: No abstract text available Text: SPICE Device Model Si1405BDH Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1405BDH S-71490Rev. 23-Jul-07 74888
Si1400DL Abstract: Si1400DL-T1-E3 Text: New Product Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.150 at VGS = 4.5 V 1.7 0.235 at VGS = 2.5 V 1.3 • TrenchFET Power MOSFET: 2.5 V Rated Pb-free Available RoHS* COMPLIANT SOT-363	Original	PDF	Si1400DL OT-363 SC-70 Si1400DL-T1 Si1400DL-T1-E3 18-Jul-08
marking AF sc70-6 Abstract: No abstract text available Text: Si1404BDH New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a rDS(on) (W) 30 0.238 @ VGS = 4.5 V 1.9 0.380 @ VGS = 2.5 V 1.51 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) RoHS APPLICATIONS 1 1 nC 1.1 COMPLIANT	Original	PDF	Si1404BDH SC-70 Si1404BDH-T1--E3 51453--Rev. marking AF sc70-6
sc 0645 Abstract: No abstract text available Text: Si1405BDH Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A)c 0.112 at VGS = - 4.5 V - 1.6 0.160 at VGS = - 2.5 V - 1.6 0.210 at VGS = - 1.8 V - 1.6 Qg (Typ.) 3.67 nC • Halogen-free According to IEC 61249-2-21	Original	PDF	Si1405BDH 2002/95/EC OT-363 SC-70 Si1405BDH-T1-E3 Si1405BDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc 0645
Si1401 Abstract: SI1401EDH-T1-GE3 si1401e Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21	Original	PDF	Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 18-Jul-08 Si1401 si1401e
AN609 Abstract: No abstract text available Text: Si1405BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1405BDH AN609 19-Dec-07
Si1407DL Abstract: No abstract text available Text: SPICE Device Model Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1407DL 18-Jul-08
74843 Abstract: AN609 Text: Si1404BDH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1404BDH AN609 11-Jul-07 74843
74131 Abstract: No abstract text available Text: SPICE Device Model Si1404BDH Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1404BDH 18-Jul-08 74131
DIODE 76A Abstract: SC70-6 Si1404DH Si1404DH-T1 Si1404DH-T1-E3 Text: Specification Comparison Vishay Siliconix Si1404BDH vs. Si1404DH Description: Package: Pin Out: N-Channel, 2.5 V G-S MOSFET SC70-6 Identical Part Number Replacements: Si1404BDH-T1-E3 Replaces Si1404DH-T1-E3 Si1404BDH-T1-E3 Replaces Si1404DH-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	PDF	Si1404BDH Si1404DH SC70-6 Si1404BDH-T1-E3 Si1404DH-T1-E3 Si1404DH-T1 DIODE 76A SC70-6

transistor 6822 Abstract: 6822 transistors 6822 6822 transistor 6822 equivalent 9940 SI1402DH AN609 Text: Si1402DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1402DH AN609 22-Mar-07 transistor 6822 6822 transistors 6822 6822 transistor 6822 equivalent 9940
4946 Abstract: 4946 mosfet AN609 Si1407DL Text: Si1407DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si1407DL AN609 12-Mar-07 4946 4946 mosfet
Si1404DH Abstract: No abstract text available Text: SPICE Device Model Si1404DH Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1404DH 27-Aug-04
Si1400DL SPICE Device Model Abstract: Si1400DL Text: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1400DL S-50151Rev. 07-Feb-05 Si1400DL SPICE Device Model
Si1405DL Abstract: 71500 uA 072 Text: SPICE Device Model Si1405DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1405DL 24-Apr-04 71500 uA 072
Si1403DL Abstract: No abstract text available Text: SPICE Device Model Si1403DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1403DL 24-Apr-04
Si1406DH Abstract: No abstract text available Text: SPICE Device Model Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1406DH 18-Sep-01
Si1400DL Abstract: No abstract text available Text: SPICE Device Model Si1400DL Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1400DL network30 10-Sep-01
Si1403DL Abstract: No abstract text available Text: SPICE Device Model Si1403DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si1403DL 14-Oct-99
Untitled Abstract: No abstract text available Text: Si1400DL Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.150 at VGS = 4.5 V 1.7 0.235 at VGS = 2.5 V 1.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 2.5 V Rated	Original	PDF	Si1400DL 2002/95/EC OT-363 SC-70 Si1400DL-T1-E3 Si1400DL-T1-GE3 18-Jul-08

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Vishay Siliconix SI1401EDH-T1-GE3

Vishay Siliconix SI1403BDL-T1-GE3

Vishay Siliconix SI1403BDL-T1-BE3

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Vishay Siliconix SI1401EDH-T1-BE3

SI140 Datasheets (40)

SI140 Datasheets Context Search

Si1405DL

Si1406DH

Qrr20

TB-17

74888

Si1400DL

marking AF sc70-6

sc 0645

Si1401

AN609

Si1407DL

74843

74131

DIODE 76A

transistor 6822

4946

Si1404DH

Si1400DL SPICE Device Model

Si1405DL

Si1403DL

Si1406DH

Si1400DL

Si1403DL

Untitled