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    SEMICONDUCTOR NUCLEAR RADIATION DETECTOR Search Results

    SEMICONDUCTOR NUCLEAR RADIATION DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SEMICONDUCTOR NUCLEAR RADIATION DETECTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Semiconductor Nuclear Radiation Detector

    Abstract: Semiconductor Radiation Detector nuclear nuclear radiation detector NR30 220ohms resistor Radiation Detector c.mac nuclear event detector
    Text: LOW POWER NUCLEAR EVENT DETECTOR C-MAC MicroTechnology, in association with MBDA, introduces a low power Nuclear Event Detector NED equipped with the latest materials and technology to mitigate the effect of nuclear weapon outputs. This cutting-edge product detects the event and sets a system


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide Frank H. Ruddy, Member, IEEE, John G. Seidel, Robert W. Flammang, Ranbir Singh, Member, IEEE, and John Schroeder Abstract–Fast-neutron detectors based on high-purity semiinsulating 4H silicon carbide SiC semiconductor have been


    Original     		PDF 14-MeV

    Semiconductor Nuclear Radiation Detector

    Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
    Text: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each


    Original     		PDF 20-3A Semiconductor Nuclear Radiation Detector fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector

    Untitled

    Abstract: No abstract text available
    Text: UM9441 PIN RADIATION DETECTORS temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no


    Original     		PDF UM9441 UM9441

    UM9441

    Abstract: No abstract text available
    Text: UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on


    Original     		PDF UM9441 UM9441

    Silicon Detector

    Abstract: No abstract text available
    Text: Si detectors for high energy particles CHAPTER 10 1 Characteristics 1-1 Active area 1-2 Dark current and junction capacitance 1-3 Response speed 2 Si detectors for scintillator coupling 3 Si direct detectors 3-1 3-2 3-3 3-4 3-5 Thickness of depletion layer


    Original     		PDF KSPDC0073EA Silicon Detector

    HSU88

    Abstract: DSA003636
    Text: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev. 7 Dec. 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.


    Original     		PDF HSU88 ADE-208-077G HSU88 DSA003636

    1SS106

    Abstract: hitachi rectifier ADE-208-153A 1SS106 diode HITACHI 1SS106 diode hitachi schottky Hitachi DSA00340
    Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information


    Original     		PDF 1SS106 ADE-208-153A DO-35 1SS106 hitachi rectifier ADE-208-153A 1SS106 diode HITACHI 1SS106 diode hitachi schottky Hitachi DSA00340

    HSD276A

    Abstract: diode hitachi schottky DSA003640
    Text: HSD276A Silicon Schottky Barrier Diode for Detector ADE-208-1385 Z Rev.0 Jul. 2001 Features • High forward current, Low capacitance. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code


    Original     		PDF HSD276A ADE-208-1385 HSD276A diode hitachi schottky DSA003640

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current . • Small Resin Package (SRP) is suitable for surface mount design.


    Original     		PDF HSR101 ADE-208-080D Hitachi DSA001653

    HSU88

    Abstract: No abstract text available
    Text: HSU88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-077G Z Rev 7 Dec 1999 Features • Low capacitance. (C=0.8pF max) • Low forward voltage. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly.


    Original     		PDF HSU88 ADE-208-077G HSU88

    hitachi rectifier

    Abstract: 1SS198 Hitachi DSA00340
    Text: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS198 ADE-208-298A hitachi rectifier 1SS198 Hitachi DSA00340

    HSC88

    Abstract: No abstract text available
    Text: HSC88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-826 Z Rev 0 Nov. 1999 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small F lat P ackage (UFP) is suitablefor high density surface mounting and high speed assembly.


    Original     		PDF HSC88 ADE-208-826 HSC88

    HSM198S

    Abstract: DSA003636
    Text: HSM198S Silicon Schottky Barrier Diode for Various Detector ADE-208-090C Z Rev. 3 Oct. 2001 Features • Detection efficiency is very good. • Small temperature coefficient. • HSM198S which is interconnected in series configuration is designed for balanced mixer use.


    Original     		PDF HSM198S ADE-208-090C HSM198S D-85622 D-85619 DSA003636

    1SS106

    Abstract: hitachi rectifier ADE-208-153A HITACHI 1SS106 1SS106 diode ADE-208-153 diode hitachi schottky DSA003640
    Text: 1SS106 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-153A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information


    Original     		PDF 1SS106 ADE-208-153A DO-35 1SS106 hitachi rectifier ADE-208-153A HITACHI 1SS106 1SS106 diode ADE-208-153 diode hitachi schottky DSA003640

    1SS286

    Abstract: diode hitachi schottky DSA003641
    Text: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Sep. 1995 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS286 ADE-208-302A 1SS286 diode hitachi schottky DSA003641

    HSC88

    Abstract: Hitachi DSA0047
    Text: HSC88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-826 Z Rev. 0 Nov. 1999 Features • Low capacitance. (C = 0.8pF max) • Low forward voltage. • Ultra small Flat Package (UFP) is suitablefor high density surface mounting and high speed assembly.


    Original     		PDF HSC88 ADE-208-826 HSC88 Hitachi DSA0047

    hitachi rectifier

    Abstract: 1SS198 diode hitachi schottky DSA003641
    Text: 1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A Z Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability.


    Original     		PDF 1SS198 ADE-208-298A hitachi rectifier 1SS198 diode hitachi schottky DSA003641

    HSD88

    Abstract: DSA003640
    Text: HSD88 Silicon Schottky Barrier Diode for Various Detector, Mixer ADE-208-1386 Z Rev.0 Jun. 2001 Features • Low capacitance. (C = 0.8 pF max) • Low forward voltage. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information


    Original     		PDF HSD88 ADE-208-1386 HSD88 DSA003640

    hitachi rectifier

    Abstract: HSM198S SC-59A Hitachi DSA0044
    Text: HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B Z Rev. 2 Jun. 1993 Features • • • • Detection efficiency is very good. Small temperature coefficient. HSM198S which is interconnected in series configuration is designed for balanced mixer use.


    Original     		PDF HSM198S ADE-208-090B HSM198S hitachi rectifier SC-59A Hitachi DSA0044

    Hitachi DSA002774

    Abstract: No abstract text available
    Text: 1S2076 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-145A Z Rev. 1 Aug. 1995 Features • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 8.0ns max) • High reliability with glass seal. Ordering Information


    Original     		PDF 1S2076 ADE-208-145A 1S2076 DO-35 17Hitachi Hitachi DSA002774

    HSK122

    Abstract: HSK4148 hitachi label information Hitachi DSA0047
    Text: HSK4148 Silicon Epitaxial Planar Diode for Various Detector, Modulator, Demodulator ADE-208-1503 Z Rev.0 Feb. 2002 Features • Low capacitance. (C = 4.0 pF max) • Short reverse recovery time. (trr = 4.0 ns max) • LLD package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HSK4148 ADE-208-1503 D-85622 D-85619 HSK122 HSK4148 hitachi label information Hitachi DSA0047

    UM9441

    Abstract: FX-25
    Text: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors


    OCR Scan     		PDF UM9441 UM9441 U21/2 FX-25

    HSR101

    Abstract: LF35 diode hitachi diode hitachi schottky
    Text: HSR101 Silicon Schottky Barrier Diode for Various detector, High speed switching HITACHI ADE-208-080D Z Rev. 4 Sept. 1, 1998 Features • Low forward voltage, High efficiency. • Low reverse current. • Small Resin Package (SRP) is suitable for surface mount design.


    OCR Scan     		PDF ADE-208-080D HSR101 HSR101 LF35 diode hitachi diode hitachi schottky