Untitled
Abstract: No abstract text available
Text: G M 71V 65803C G M 71V S65803C L 8,388,608 W O R D S x 8 BIT CMOS DYNAMIC RAM D escription Pin Configuration T h e GM 71V S 65803C/ C L i s t h e n ew generation dynamic RA M organized 8,388,608 w o r d s by 8 b i t s. T h e G M 71V (S)65803C/ C L utilizes advanced CM O S Silicon Gate Process
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65803C
S65803C
65803C/
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2032VE
Abstract: 2032VE-180LT44 2032ve-110lt48 2032ve180lt44i 2032VE-110LT44 2032ve-110lb49
Text: ispLSI 2032VE Device Datasheet June 2010 Select Devices Discontinued! Product Change Notification PCN #09-10 has been issued to discontinue select devices in this data sheet. The original datasheet pages have not been modified and do not reflect those changes.
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2032VE
2032VE
2032VE-110LJ44
2032VE-135LJ44
2032VE-180LJ44
2032VE-225LJ44
2032VE-110LT44
2032VE-135LT44
2032VE-180LT44
2032VE-225LT44
2032VE-180LT44
2032ve-110lt48
2032ve180lt44i
2032VE-110LT44
2032ve-110lb49
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Untitled
Abstract: No abstract text available
Text: nt Encapsulated PC Transformers 1VA - 160VA Power Transformers 1VA - 7.5kVA Encapsulated Styles 1VA - 500VA Special Mounting Configurations In Standard Configurations and to Customer Specifications magnetics nuvotem Toroidal Transformers for Universal Application
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160VA
500VA
6400K
6500K
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ES8388
Abstract: No abstract text available
Text: G M 71V 65803C G M 71V S65803C L 8,388,608 W O R D S x 8 BIT CMOS DYNAMIC RAM D escription Pin Configuration T h e GM 71V S 65803C/ C L i s t h e n ew generation dynamic RA M organized 8,388,608 w o r d s by 8 b i t s. T h e G M 71V (S)65803C/ C L utilizes advanced CM O S Silicon Gate Process
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65803C
S65803C
65803C/
ES8388
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Untitled
Abstract: No abstract text available
Text: G M 71V 65803C G M 71V S65803C L 8,388,608 W O R D S x 8 BIT CMOS DYNAMIC RAM D escription Pin Configuration T h e GM 71V S 65803C/ C L i s t h e n ew generation dynamic RA M organized 8,388,608 w o r d s by 8 b i t s. T h e G M 71V (S)65803C/ C L utilizes advanced CM O S Silicon Gate Process
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65803C
S65803C
65803C/
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ispLSI2032
Abstract: No abstract text available
Text: LeadFree Package Options Available! ispLSI 2032/A In-System Programmable High Density PLD Features Functional Block Diagram • ENHANCEMENTS GLB Logic Array A6 D Q D Q A5 D Q EW A4 0139Bisp/2000 FO R N fmax = 180 MHz Maximum Operating Frequency tpd = 5.0 ns Propagation Delay
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2032/A
44-Pin
48-Pin
2-0041C/2032
2032/A
032A-80LJN44I
032A-80LTN44I
032A-80LTN48I
ispLSI2032
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IDT70121
Abstract: IDT70125 IDT70121S
Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Commercial: 25/35/45/55ns max. Low-power operation – IDT70121/70125S Active: 675mW (typ.) Standby: 5mW (typ.) – IDT70121/70125L
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25/35/45/55ns
IDT70121/70125S
675mW
IDT70121/70125L
IDT70121
IDT70125
IDT70121S/L
IDT70125S/L
IDT70121S
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ISPLSI 2032A-180LTN44
Abstract: 80LT44 2032A 2032E 44-PIN 48-PIN ISPLSI 2032A-110LTN44
Text: LeadFree Package Options Available! ispLSI 2032/A In-System Programmable High Density PLD Features Functional Block Diagram • ENHANCEMENTS GLB Logic Array A6 D Q D Q A5 D Q EW A4 0139Bisp/2000 FO R N fmax = 180 MHz Maximum Operating Frequency tpd = 5.0 ns Propagation Delay
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2032/A
0139Bisp/2000
48-Pin
2032/A
032A-80LJN44I
032A-80LTN44I
032A-80LTN48I
44-Pin
ISPLSI 2032A-180LTN44
80LT44
2032A
2032E
ISPLSI 2032A-110LTN44
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Untitled
Abstract: No abstract text available
Text: ispLSI 2032/A In-System Programmable High Density PLD Features Functional Block Diagram • ENHANCEMENTS GLB Logic Array A6 D Q D Q A5 D Q EW A4 0139Bisp/2000 R N fmax = 180 MHz Maximum Operating Frequency tpd = 5.0 ns Propagation Delay Description FO • IN-SYSTEM PROGRAMMABLE
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2032/A
2032-150LJ
2032-150LT44
2032-150LT48
2032-135LJ
2032-135LT44
2032-135LT48
2032-110LJ
2032-110LT44
2032-110LT48
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44-PIN
Abstract: 20041a 2032A isp 2032 SE 135 pin configuration
Text: ispLSI 2032/A In-System Programmable High Density PLD Features Functional Block Diagram • ENHANCEMENTS GLB Logic Array A6 D Q D Q A5 D Q EW A4 0139Bisp/2000 R N fmax = 180 MHz Maximum Operating Frequency tpd = 5.0 ns Propagation Delay Description FO • IN-SYSTEM PROGRAMMABLE
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2032/A
0139Bisp/2000
2032-135LJ
2032-135LT44
2032-135LT48
2032-110LJ
2032-110LT44
2032-110LT48
2032-80LJ
2032-80LT44
44-PIN
20041a
2032A
isp 2032
SE 135 pin configuration
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SECTION 1
Abstract: 60Hz Transformers TESLA MA 1458 Halogen lighting toroidal transformer FERRITE TRANSFORMER 20khz toroid MA 1458, TESLA transformer 3000va toroidal transformer 120v VDE 0570 EN61558 E215495
Text: nt Encapsulated PC Transformers 1VA - 160VA Power Transformers 1VA - 7.5kVA Encapsulated Styles 1VA - 500VA Special Mounting Configurations In Standard Configurations and to Customer Specifications magnetics nuvotem Toroidal Transformers for Universal Application
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160VA
500VA
100TRANSFORMERS
SECTION 1
60Hz Transformers
TESLA MA 1458
Halogen lighting toroidal transformer
FERRITE TRANSFORMER 20khz toroid
MA 1458, TESLA
transformer 3000va
toroidal transformer 120v
VDE 0570 EN61558
E215495
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Untitled
Abstract: No abstract text available
Text: nt Encapsulated PC Transformers 1VA - 160VA Power Transformers 1VA - 7.5kVA Encapsulated Styles 1VA - 500VA Special Mounting Configurations In Standard Configurations and to Customer Specifications magnetics nuvotem Toroidal Transformers for Universal Application
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Original
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160VA
500VA
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ISPLSI 2032A-180LTN44
Abstract: 2032A 44-PIN 2032A-135LT441 2032A-80Ltn
Text: LeadFree Package Options Available! ispLSI 2032/A In-System Programmable High Density PLD Features Functional Block Diagram • ENHANCEMENTS S Logic Array A6 D Q D Q A5 D Q EW Input Bus GLB A4 0139Bisp/2000 FO R N fmax = 180 MHz Maximum Operating Frequency
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2032/A
0139Bisp/2000
2032/A
032A-80LJN44I
032A-80LTN44I
032A-80LTN48I
44-Pin
48-Pin
ISPLSI 2032A-180LTN44
2032A
2032A-135LT441
2032A-80Ltn
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CRT9006-135
Abstract: CRT9006 CRT9006-83 B135 crt5037 5037 crt crt 9006-135
Text: CRT 9006-135 CRT 9006-83 STANDARD MICROSYSTEMS CORPORATION Single Row Buffer SRB PIN CONFIGURATION D O U T3 D O U T2 DOUT1 D O U T0 C LK C C C Cl Cl 1 ^ 24 2 23 3 22 4 21 5 |- •n 20 6\ I 19 - J 8 Cl W REN C C LRCNT 3 ID =1 ID ID ID ID Ci GND DO U T4
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2N5465
Abstract: 2N5460 2N5460-2N5465 SST5461
Text: P-Channel JFET Low Noise Amplifier C Q IO Q IC CORPORATION 2N5460- 2N5465/ SST5460- SST5465 ABSOLUTE MAXIMUM RATINGS T a =• 25°C unless otherwise specified PIN CONFIGURATION * Drain-Gate or Source-Gate Voltage 2N5460 - 2N5462 .-40V
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2N5460-
2N5465/
SST5460-
SST5465
2N5460
2N5462
2N5463
2N5465
310mW
2N5465
2N5460-2N5465
SST5461
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117 AJG
Abstract: sf 128 d l5
Text: M ITSUBISH I LSI« G M IC R O M 33241GS ' C M O S D M A C O N T R O L L E R M 3 2 /D M A C DESCRIPTION M 3 3 2 4 1 G S ( M 3 2 / D M A C ) is an ad va n ce d and high per PIN CONFIGURATION (BOTTOM VIEW) form ance D M A controller ca pab le of a c c e s sin g a 32-bit
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33241GS
32-bit
10group
M33241GS
117 AJG
sf 128 d l5
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2N5458
Abstract: JFET 2N5457 2N5457-2N5459
Text: _ _ l- W itU I O Q I C \J N-Channel JFET General Purpose Amplifier/Switch CORPORATION 2N5457-2N5459 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted PIN CONFIGURATION f I Drain-Gate Voltage .25V
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2N5457-2N5459
310mW
200jiA,
2N5458
2N5459
630ms,
JFET 2N5457
2N5457-2N5459
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MSD6100
Abstract: No abstract text available
Text: MSD6100 silicon Silicon epitaxial dual switching diode, designed for use in high speed switching applications, features high breakdown voltage, low capacitance and space saving common-cathode configuration. 1 2 f CASE 29 3 rj S T Y L E 3: \ ° ° ° (TO-92)
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MSD6100
MSD6100
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IC 4164
Abstract: 4164-2 RAM 4164 ram 4164 ram mos 4164 4164-2 HYB4164 RAM 4164 4164 eve
Text: SIEM EN S HYB 4164-1, HYB 4164-2, HYB 4164-3 65,536-Bit Dynamic Random Access Memory RAM • 65,536 X1 bit organization • All inputs and outputs T T L com patible • Industry standard 16-pin JE D E C configuration • High over- and undershooting capability
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536-Bit
16-pin
iPin12)
HYB41
IC 4164
4164-2 RAM
4164 ram
4164
ram mos 4164
4164-2
HYB4164
RAM 4164
4164 eve
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Untitled
Abstract: No abstract text available
Text: HY51V65800, HY51V64800 •HYUNDAI 8M x 8-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION T his fam ily is a 64M bit d yn a m ic RAM organized 8,388,608 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed
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HY51V65800,
HY51V64800
HY51V64800JC
HY51V64800LJC
HY51V64800SLJC
HY51V64800TC
HY51V64800SLTC
HY51V65800JC
HY51V65800LJC
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Untitled
Abstract: No abstract text available
Text: Configuration EPROMs for FLEX Devices June 1996, ver. 5 Data Sheet Features S erial E PR O M fam ily fo r c o n fig u rin g FLEX d ev ice s S im p le, e asy -to -u se 4 -p in in terfa ce to FLEX d ev ice s L ow c u rre n t d u rin g c o n fig u ra tio n a n d n e a r-z e ro s ta n d b y c u rre n t
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74HC253p
Abstract: No abstract text available
Text: M IT S U B IS H I HIGH SPEED CMOS M74HC253P/FP/DP DUAL 4 -IN P U T DATA S E L E C T O R /M U L T IP L E X E R W ITH 3-S TA TE O U TPU TS DESCRIPTION The M 74H C 253 is a sem ico nductor integrated circuit con PIN CONFIGURATION TOP VIEW sisting of tw o 4-lin e to 1-line data se le cto rs/m u ltip le xrs with
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M74HC253P/FP/DP
74LSTTL
74HC253p
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NE5009
Abstract: NE5009F SE5009F SE5009 5009C
Text: NE5009-F.N • SE5009-F DESCRIPTION PIN CONFIGURATION The 5009 m o n o lith ic 8-b it d ig ita l-to -a n a lo g c o n v e rte r is an e le c tric a l selectio n o f the 5007/8 series o f 8 -b it D /A converters. Rela tive a ccu ra cy is sp e cifie d to + 1/ 4LSB m a xi
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NE5009-F
SE5009-F
SE5009
NE5009
NE5009F
SE5009F
5009C
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J201 equivalent
Abstract: J201-J204 J202 equivalent J201 j204 J203 sg-5010 j201 jfet x0035
Text: D IM m ü ^lölL J201-J204 N-Chanriel J F E T FEATURES PIN CONFIGURATION • High Input Impedance IQ = 35pA Typ. • Low IQSS (IGSS = 100pA max) CHIP TOPOGRAPHY TO-92 5010 „ .00254.0035) „ .002S(.0635) , .OOM(.MM) .0G35(.0M9) ABSOLUTE MAXIMUM RATINGS (25 °C)
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J201-J204
100pA
360mW
127lJ)
01K-279]
200fiA
J201 equivalent
J202 equivalent
J201
j204
J203
sg-5010
j201 jfet
x0035
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