NTE7232
Abstract: NTE2682 NTE2684 NTE7239 pdf/ES-F8DB-14A464-A
Text: NTE SEMICONDUCTORS ADDED SINCE MAY 2013 NTE PART NO. DESCRIPTION Datasheet Link NTE573-1 RECTIFIERS Schottky Barrier Rectifier, 100V, 5 Amp, DO‐201AD Case NTE573‐2 Schottky Barrier Rectifier, 200V, 5 Amp, DO‐201AD Case
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NTE573â
201ADÂ
com/specs/500to599/pdf/nte573â
NTE639
214AAÂ
NTE7232
NTE2682
NTE2684
NTE7239
pdf/ES-F8DB-14A464-A
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LT 543 common cathode
Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current
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2010/9SCE0004K
TPC6K01
HMG01
CRG02
CRG07
CRG03
CRG09
CMG05
CMG07
CMG02
LT 543 common cathode
CMG03
CMG07
HEDS 5300
toshiba semiconductor catalog
DF3S6.8ECT
DF2S5.6SC
DSR520CT
1SV283B
2fu smd transistor
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CMG03
Abstract: 1SS391 2fu smd transistor DF2S6.8S CMG07 TOSHIBA DIODE CATALOG DSR520CT toshiba SEMICONDUCTOR GENERAL CATALOG CMF05 CRS01
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2009-8 SCE0004I Rectifiers General-Purpose Rectifiers Average Forward Current A
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SCE0004I
TPC6K01
HMG01
CRG02
CRG07
CRG03
CMG05
CMG07
CMG02
CRG01
CMG03
1SS391
2fu smd transistor
DF2S6.8S
CMG07
TOSHIBA DIODE CATALOG
DSR520CT
toshiba SEMICONDUCTOR GENERAL CATALOG
CMF05
CRS01
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Untitled
Abstract: No abstract text available
Text: GaAsP photodiode G1747 Schottky type with extended red sensitivity Features Applications Low dark current Analytical instruments Extended red sensitivity Color identification High UV sensitivity UV detection Structure / Absolute maximum ratings Parameter Package
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G1747
KGPD1006E02
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smd diode Lz zener
Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A
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SCE0004L
TPC6K01
HMG01
CRG02
CRG07
CRG03
CRG09
CMG05
CMG07
CMG02
smd diode Lz zener
CRS20I30B
JDV2S41
CRS15I30B
CUS10I40A
TOSHIBA DIODE CATALOG
toshiba SEMICONDUCTOR GENERAL CATALOG
CMS30I40A
CMS10I40A
CRS20I40B
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G1962
Abstract: uv photodiode, GaP GaP photodiode
Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package
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G1961
G1962
G1963
KGPD1007E02
uv photodiode, GaP
GaP photodiode
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UV source led 254 nm peak
Abstract: G1126-02
Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/
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G1126-02
G1127-02
G2119
KGPD1005E02
UV source led 254 nm peak
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Untitled
Abstract: No abstract text available
Text: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. G1961 G1962 G1963 Dimensional outline/ Window material /Q* /Q /Q Package
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G1961
G1962
G1963
KGPD1007E02
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Untitled
Abstract: No abstract text available
Text: GaAsP photodiode G1126-02 G1127-02 G2119 Schottky type for UV to visible range Features Applications Low dark current Analytical instruments High UV sensitivity Color identification UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/
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G1126-02
G1127-02
G2119
KGPD1005E02
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GaP photodiode
Abstract: G1962 uv photodiode, GaP G1961 G1963 ACTIVE LOAD PHOTODIODE
Text: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/
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G1961,
G1962,
G1963
G1961
G1962
SE-171
KGPD1007E01
GaP photodiode
G1962
uv photodiode, GaP
G1961
G1963
ACTIVE LOAD PHOTODIODE
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GaP photodiode
Abstract: uv photodiode, GaP G1962 G1961 G1963
Text: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/
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G1961,
G1962,
G1963
G1961
G1962
SE-171
KGPD1007E01
GaP photodiode
uv photodiode, GaP
G1962
G1961
G1963
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ultraviolet sensor
Abstract: ultraviolet sensor datasheet 5209 3.3 TW30SY 5209
Text: Ultraviolet selective thin film sensor TW30SY Features • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle
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TW30SY
ultraviolet sensor
ultraviolet sensor datasheet
5209 3.3
TW30SY
5209
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TW30SY
Abstract: TR15 TW30 ultraviolet sensor
Text: Ultraviolet selective thin film sensor TW30SY Features • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle
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TW30SY
TW30SY
TR15
TW30
ultraviolet sensor
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OPA128
Abstract: SLOA011 TW30SY s 5301
Text: Ultraviolet selective thin film sensor “TW30SY” NEW: Read important application notes on page 4 ff. Features • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area
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TW30SY"
SLOA011)
OPA128
SLOA011
TW30SY
s 5301
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tw30sx
Abstract: ultraviolet sensor ultraviolet sensor datasheet
Text: Ultraviolet selective thin film sensor TW30SX Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle
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TW30SX
S400nm
tw30sx
ultraviolet sensor
ultraviolet sensor datasheet
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ultraviolet sensor
Abstract: UV30DZ
Text: Ultraviolet selective thin film sensor UV30DZ Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area
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UV30DZ
400nm
ultraviolet sensor
UV30DZ
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Untitled
Abstract: No abstract text available
Text: Ultraviolet selective thin film sensor TW30DY Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area
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TW30DY
400nm
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GUVB-S11SD
Abstract: No abstract text available
Text: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring
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GUVB-S11SD
GUVB-S11SD
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ultraviolet sensor datasheet
Abstract: ultraviolet sensor nm-400 ultraviolet sensors TW30DY2
Text: Ultraviolet selective thin film sensor TW30DY2 Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area
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TW30DY2
400nm
300nm)
ultraviolet sensor datasheet
ultraviolet sensor
nm-400
ultraviolet sensors
TW30DY2
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ultraviolet sensor
Abstract: ultraviolet sensor datasheet 5209 3.3 ultraviolet sensors TW30DZ
Text: Ultraviolet selective thin film sensor TW30DZ Features • • • • • • • Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Built-in filter glass for low sensitivity above 400nm Large photoactive area
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TW30DZ
400nm
ultraviolet sensor
ultraviolet sensor datasheet
5209 3.3
ultraviolet sensors
TW30DZ
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GUVA-T11GD
Abstract: No abstract text available
Text: GUVA-T11GD TECHNICAL DATA UV-A Sensor Features • • • • • Applications Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current • • • Full UV Band Monitoring
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GUVA-T11GD
GUVA-T11GD
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Untitled
Abstract: No abstract text available
Text: Ultraviolet selective thin film sensor UVD 39 Features •= •= •= •= •= •= •= Schottky-type photodiode Intrinsic visible blindness due to wide-bandgap semiconductor material Large photoactive area No focusing lens needed, therefore large usable incident angle
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Untitled
Abstract: No abstract text available
Text: GUVA-S22ED TECHNICAL DATA UV-B Sensor Features • • • • • Applications • Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring Absolute Maximum Ratings
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GUVA-S22ED
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GUVC-T10GD
Abstract: No abstract text available
Text: GUVC-T10GD TECHNICAL DATA UV-A Sensor Features • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness Pure UV-C Monitoring Sterilization Lamp Monitoring Absolute Maximum Ratings
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GUVC-T10GD
GUVC-T10GD
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