RF TRANSISTOR SOT23 5 Search Results

RF TRANSISTOR SOT23 5 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL

RF TRANSISTOR SOT23 5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RF TRANSISTOR SOT23 5 Abstract: transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10 Text: BFS17A NPN Bipolar Silicon RF Transistor in plastic package SOT23 Attribute Value Configuration UOM NPN Function RF Package SOT23 VCEO max 15 V VCBO max 25 V VEBO max 2.5 V IC max 25 mA 200 mW Ptot max DC current gain Transition frequency min 20 @IE 2 mA @VCE	Original	PDF	BFS17A BFR92 BFR93A RF TRANSISTOR SOT23 5 transistor 20 dB 14 ghz sot23 Bipolar NPN Transistor Bipolar Transistor npn sot23 BFR92 BFR92A BFR93 BFR93A BFS17A transistor with gain 10
SOT23 W1P NXP Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	Original	PDF	BFT92 MSB003act R77/02/pp10 SOT23 W1P NXP
BFR93 application note Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	PDF	BFT93 R77/02/pp10 BFR93 application note
BFT93 Abstract: BFR93 application note bfr93 MSB003 BFR93A Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	PDF	BFT93 R77/02/pp10 BFT93 BFR93 application note bfr93 MSB003 BFR93A
W1p TRANSISTOR Abstract: BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	Original	PDF	BFT92 R77/02/pp10 W1p TRANSISTOR BFT92 transistor w1P w1p npn SOT23 W1P BFR92 application note SOT23 W1P NXP w1p 60 transistor Bft92 W1p 48 TRANSISTOR
BFT25 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	PDF	BFT25 MSB003 R77/02/pp10 BFT25
BFT25 Abstract: MSB003 Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF	Original	PDF	BFT25 MSB003 R77/02/pp10 BFT25 MSB003
BFR92A Abstract: bfr92 Text: SMALL SIGNAL NPN RF TRANSISTOR BFR92, BFR92A • Silicon Planar Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package SOT23 Compatible • Suitable For UHF Applications Up To 1.0GHz • Space Level and High-Reliability Screening Options Available	Original	PDF	BFR92, BFR92A 250mW BFR92AC1B-JQRS BFR92A bfr92
BFR520 Abstract: 900MHZ Text: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.	Original	PDF	BFR520 OT-23 BFR520 06-Feb-07 OT-23 900MHZ
Untitled Abstract: No abstract text available Text: 62 7 BFU520A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU520A is part of the BFU5 family of transistors, suitable for small signal to medium	Original	PDF	BFU520A BFU520A AEC-Q101
ice 0565 Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157 Text: THN6501S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6501S is a low Noise figure and good associated gain performance at UHF, VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES	Original	PDF	THN6501S OT-23 THN6501S 00GHz 800GHz 000GHz 200GHz 400GHz 600GHz ice 0565 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 137 transistor bc 207 npn 46644 transistors BC 548 BC 558 bc 331 TRANSISTOR BC 187 BC 557 npn TRANSISTOR BC 157
74299 Abstract: 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V THN6201S Text: THN6201S NPN Planer RF TRANSISTOR SOT-23 □ DESCRIPTION The THN6201S is a low Noise figure and good associated gain performance at UHF,VHF and Microwave frequencies It is suitable for a high density surface mount since transistor has been SOT23 package □ FEATURES	Original	PDF	THN6201S OT-23 THN6201S 12GHz 800GHz 000GHz 200GHz 400GHz 600GHz 74299 44071 transistor 104462 39158 76620 54175 82258 75604 TRANSISTOR SOT23, Vbe 8V
Untitled Abstract: No abstract text available Text: 62 7 BFU530A NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package. The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium	Original	PDF	BFU530A BFU530A AEC-Q101
transistor c 3181 Abstract: ML SOT23 TRANSISTOR 3182 Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650MHz * * M axim um capacitance 0.7pF Low noise < 5dB at 500MHz PARTMARKING D E T A IL- Ml 3E2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage	OCR Scan	PDF	650MHz 500MHz FMMTH10 100MHz 500MHz, 300ns. transistor c 3181 ML SOT23 TRANSISTOR 3182

transistor P1P Abstract: BFR92 transistor bfr92 MSB003 p1p transistor code p1p MW27 choke 3122 108 20150 BFR90 BFT92 Text: Philips Semiconductors M 7 3 ilO flEb D D b lllfl 555 H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION £ BFR92 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF wideband amplifiers and oscillators. The transistor features	OCR Scan	PDF	73ilOfigb BFR92 BFT92. MSB003 25mitter 711052k transistor P1P transistor bfr92 p1p transistor code p1p MW27 choke 3122 108 20150 BFR90 BFT92
BFR93 Abstract: BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47 Text: Philips Semiconductors 711002t D D b 'iim T3Û PH I N Product specification NPN 5 G Hz w ideband transistor DESCRIPTION £ BFR93 PINNING NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The transistor features very low	OCR Scan	PDF	711005t BFR93 ON4186) BFT93. 711002b BFR91 BFT93 choke 3122 108 20150 ScansUX40 transistor bfr93 TRANSISTOR B47
BFR91 philips Abstract: No abstract text available Text: bbS3T31 0025175 2S4 M A P X Philips Semiconductors N AMER PHILIPS/DISCRETE NPN 5 GHz wideband transistor Product specification b7E » £ BFR93 DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily intended for use in RF amplifiers and oscillators. The	OCR Scan	PDF	bbS3T31 BFR93 ON4186) BFT93. BFR91 philips
transistor k 911 Abstract: No abstract text available Text: PhHip^emiconductore H 711002b QDbTBbl STA M P H I N ^^Produc^pecification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems,	OCR Scan	PDF	711002b BFT93 BFR93 BFR93A. transistor k 911
E2p 93 transistor Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF	OCR Scan	PDF	BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
transistor P1P Abstract: BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p Text: m P hilips S em iconductors bbS3T31 N AMER DD2S1S2 757 H I A P X PHILIPS/DISCRETE _ . ._. Product specifigatjon b7E J> NPN 5 GHz wideband transistor £ BFR92 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope primarily Intended for use in RF wideband amplifiers and	OCR Scan	PDF	bbS3T31 BFR92 BFT92. transistor P1P BFR92 p1p transistor BFT92 Philips MBB BFR90 amplifier J31 transistor BFR90 code p1p
684 k 100 Abstract: BFT93 BFR93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN Text: bbSBTBl 0 0 £5 3*15 TDM HIAPX — N AUER PHILIPS/DISCRETE b?E » PNP 5 GHz wideband transistor Philips Semiconductors — DESCRIPTION Product specification ^ BFT93 ^ PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	OCR Scan	PDF	BFT93 BFR93 BFR93A. 684 k 100 BFT93 BFR93A TRANSISTOR D 1765 lc 945 p transistor NPN
transistor w1P Abstract: W1p TRANSISTOR SOT23 W1P w1p npn "W1P" W1P 06 w1p 60 W1p 69 w1p 22 w1p code Text: 71 1 0A 2 b 00tjT3S4 Philips S em iconductors 3Sfl B I P H I N Product specification PNP 5 GHz wideband transistor DESCRIPTION £ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended or use in RF wideband amplifiers, such as in	OCR Scan	PDF	7110fl2b BFT92 BFR92 BFR92A. current13 transistor w1P W1p TRANSISTOR SOT23 W1P w1p npn "W1P" W1P 06 w1p 60 W1p 69 w1p 22 w1p code
Untitled Abstract: No abstract text available Text: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSU E 2 - NOVEMBER 1995 FEATU RES * High f-^eöOMHz * M a xim u m capacitance 0.7pF * K Low noise < 5dB at 500M H z P A R T M A R K IN G D E T A IL - 3EZ SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage	OCR Scan	PDF	FMMTH10 100MHz 500MHz, ci34c
TAG 8907 Abstract: lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671 BFR93 Text: Philips Semiconductors •■ 71 10 05 b d O b ^ h l S IS ■ P H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in	OCR Scan	PDF	711005b BFT93 BFR93 BFR93A. TAG 8907 lc 945 p transistor BFT93 1348 transistor B 1446 transistor B 1449 transistor 2F PNP SOT23 lc 945 transistor SiS 671

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RF TRANSISTOR SOT23 5 Search Results

RF TRANSISTOR SOT23 5 Result Highlights (5)

RF TRANSISTOR SOT23 5 Datasheets Context Search

RF TRANSISTOR SOT23 5

SOT23 W1P NXP

BFR93 application note

BFT93

W1p TRANSISTOR

BFT25

BFT25

BFR92A

BFR520

Untitled

ice 0565

74299

Untitled

transistor c 3181

transistor P1P

BFR93

BFR91 philips

transistor k 911

E2p 93 transistor

transistor P1P

684 k 100

transistor w1P

Untitled

TAG 8907