RAYTHEON
Abstract: RMPA0951-102 RO4003 PA0951
Text: Raytheon Raytheon Commercial Electronics RMPA0951-102 3V Cellular CDMA Power Amplifier Module The RMPA0951-102 is a dual mode, small outline power amplifier module for Cellular CDMA personal communication system applications. The Power Amplifier Module is internally-matched to 50 ohms and DC blocked which
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RMPA0951-102
RMPA0951-102
RMPA0951
RAYTHEON
RO4003
PA0951
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RAYTHEON
Abstract: RMPA2051 RMPA2051-102 RO4003 Rogers RO4003 mmic marking brown
Text: Raytheon Raytheon Commercial Electronics RMPA2051-102 3V WCDMA/CDMA2000 Power Amplifier Module The RMPA2051-102 is a small outline, low-profile power amplifier for WCDMA/CDMA2000 applications. The Power Amplifier Module PAM is internally matched to 50 ohms and DC blocked which minimizes the use of
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RMPA2051-102
WCDMA/CDMA2000
RMPA2051-102
50-ohm
RAYTHEON
RMPA2051
RO4003
Rogers RO4003
mmic marking brown
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Valor PT4171
Abstract: PT4171 Valor Electronics AN39 RCC615 fddi copper PE68509 65-AN39-01 rj45 pinout
Text: www.fairchildsemi.com Application Note 39 Use of Raytheon’s RCC615 125 Megabaud Twisted Pair Transceiver for Fast Ethernet and FDDI applications 1. Introduction This application note provides details of using RCC615, 125 Megabaud Twisted Pair Transceiver, in Fast Ethernet and
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RCC615
RCC615,
RCC615
Valor PT4171
PT4171
Valor Electronics
AN39
fddi copper
PE68509
65-AN39-01
rj45 pinout
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RAYTHEON
Abstract: XC95108-7TQ100C flir system FLIR
Text: HI-REL CUSTOMER SUCCESS STORY Major Program Success at D Raytheon T.I. esigners of defense systems have long recognized the benefits of using FPGAs for their system designs. The flexibility, reconfigurability, and easy access to devices used for prototyping are but a few of the
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XC95108
XC9500
RAYTHEON
XC95108-7TQ100C
flir system
FLIR
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RAYTHEON
Abstract: RMPA1955-99 GPRS Diagram
Text: RMPA1955-99 3V Tri-Band GSM/GPRS Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Tri-band GSM/GPRS Power Amplifier PA Module which uses Raytheon’s InGaP Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip
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RMPA1955-99
RMPA1955-99
RAYTHEON
GPRS Diagram
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GSM9004
Abstract: gsm module micro DCS1800 GSM900 RMPA1955-99
Text: RMPA1955-99 3V Dual-Band GSM Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1955-99 is a Dual-band GSM Power Amplifier PA Module which uses Raytheon’s Heterojunction Bipolar Transistor (HBT) PA MMICs and a CMOS control circuit. The fully integrated lead-less chip carrier module
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RMPA1955-99
RMPA1955-99
GSM9004
gsm module micro
DCS1800
GSM900
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Ericsson
Abstract: XC95108-7TQ100C XC9500 XC95108
Text: Raytheon T.I. Continued from the previous page 14 a real plus given the tight schedule we were working under.” The ability to make system upgrades in the field proved important to the HTI program. “If we need to make upgrades to the system in the field, we can do so by reconfiguring
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MIL-PRF-38535,
XC95108
XC9500
Ericsson
XC95108-7TQ100C
XC9500
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MB7052
Abstract: MB7051 MB7122 27s49 MB7057 27S19 27s13 PROM intel 3601 MB7058 MB7053
Text: TTL/Bipolar PROM / RAM Reference Guide V2.f3 TS = Tri-State output OC = Open Collector output Hacked, copied, edited and extended by W.G. to give it a decent shape and handy booklet form The main part is extracted from
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--uPB410
------MB7051
uPB400
MB7056
----P3106
27S01
P3107
82S16
82S116
82S06
MB7052
MB7051
MB7122
27s49
MB7057
27S19
27s13
PROM intel 3601
MB7058
MB7053
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RAYTHEON
Abstract: RMPA0951-102 RO4003 CMDA
Text: RMPA0951-102 3V Cellular CDMA Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA0951-102 is a dual mode, small-outline power amplifier module PAM for Cellular CDMA personal communication system applications. The PA is internally-matched to 50 ohms and DC blocked which minimizes the
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RMPA0951-102
RMPA0951-102
50-ohm
RAYTHEON
RO4003
CMDA
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CDMA2000-1X
Abstract: RAYTHEON RMPA1956-103
Text: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.
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RMPA1956-103
CDMA2000-1X
RAYTHEON
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R29771
Abstract: 6aj7 r296xx programming the R29771 R29773 PROM
Text: RAYTHEON/ SEMICONDUCTOR 27E D • 7ST73tiO DGObTSD 3 ■ Product Specifications PROMs/SPROMs “T -4& -/3'¿15 R29700 Series Raytheon 4096 x 8 R29771/R29773 Standard PROMs and Power-Switched SPROMs Features/Benefits ■ Devices are available in both commercial
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7ST73tiO
R29700
R29771/R29773
24-pin,
R29771
6aj7
r296xx
programming the R29771
R29773 PROM
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r296xx
Abstract: 13007-2 R29773 PROM
Text: _ R296XX/R297XX R296XX/R297XX Standard PROMs and Power-Switched SPROMs Description Features Raytheon Semiconductor’s Bipolar Reid Programmable Read-Only Memories include both standard and powerswitched versions. CS/PS inputs provide logic flexibility
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R296XX/R297XX
R296XX
13007-2
R29773 PROM
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division R296XX/R297XX S tandard PROMs and P ow er-S w itched SPROMs Features Description • Devices are available in military -55°C to +125°C temperature range • Standard PROMs are offered in power-switched SPROM
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R296XX/R297XX
24-pin,
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division R296XX/R297XX S ta n d a rd PR O M s an d P o w e r-S w itc h e d SP R O M s Features Description • Devices are available in military -55°C to +125°C temperature range • Standard PROMs are offered in power-switched SPROM
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R296XX/R297XX
24-pin,
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9624DC
Abstract: ut 29627
Text: LSI Components PRODUCT SPECIFICATIONS RAYTHEON Field-Programmable Read-Only Memories Description 29000 Series Features R a y t h e o n ’s 290 00 S e r i e s of F ie ld Programmable Read-Only Memories includes most of the popular PR O M configurations in
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hi023
100BSC
54BSC
9624DC
ut 29627
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27S43
Abstract: No abstract text available
Text: Product Specifications PROMs 29000 Series PROMs Raytheon 29000 Series Field Programmable Read-Only Memories Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low po w e r S ch o ttky te ch n o lo g y H ighly reliable n ichro m e fuses Three-state ou tputs
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Untitled
Abstract: No abstract text available
Text: Raytheon Electronics Semiconductor Division RC6702 RGB to Y, C r , C b Transcoder Features • • • • • • RGB to Y, C r , C b matrix, meets CCIR 601 -1 Thin film gain setting resistors External gain adjustments pins 60 MHz -3 dB bandwidth 10 MHz 0.1 dB gain flatness
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RC6702
RC6702
DS20006702
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insulating Gasket
Abstract: cavity resonator QK417 UG-39U radar tube easily tuned oscillator Raytheon Company "Power Tube" waveguide screw
Text: T E C H N IC A L IN FO R M A T IO N RAYTHEON JC -t - -L JX . TYPE R K 63Î 0/ Q K 417 £JL The RK6310/QK417 is a m ech an ically tuned velocity variation oscillator of the single cavity integral reflex type designed for C W operation in the 8500 to 10000 Me
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RK6310/QK417
RK63I0/QK4I7
insulating Gasket
cavity resonator
QK417
UG-39U
radar tube
easily tuned oscillator
Raytheon Company
"Power Tube"
waveguide screw
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29661DC
Abstract: No abstract text available
Text: LSI Components PRODUCT SPECIFICATIONS 29000 Series Field-Programmable Read-Only Memories RAYTHEON Description Features R a y t h e o n ’ s 2 9 0 0 0 S e r ie s o f F ie l d P ro gra m m ab le R e ad-O nly M em ories in clu d e s m ost o f the p o p u la r PROM c o n fig u ra tio n s in
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100BSC
54BSC
24-Lead
29661DC
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raytheon klystron
Abstract: 2K45 Raytheon reflex klystron reflex klystron klystron reflex klystrons Raytheon Company cavity resonator microwave tubes Scans-0017388
Text: T E C H N IC A L IN F O R M A T IO N RAYTHEON t rè iâ l 1 V E LO C IT Y V A R IA T IO N O S C IL L A T O R a £ _ a _ — <— n . £ J - The type 2K45 is a therm ally tuned velocity variation oscillator of the single cavity integral reflex type designed for CW operation in the 8500
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B9-93
raytheon klystron
2K45
Raytheon reflex klystron
reflex klystron
klystron
reflex klystrons
Raytheon Company
cavity resonator
microwave tubes
Scans-0017388
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raytheon
Abstract: AM27S291ADC MB7138H-SK 27C291-50 SIGNETICS prom 63S1681N 57C29-1 57C291-55 63S1681ANS HARRIS PROM
Text: SEEQ TECHNOLOGY PROM REPLACEMENT CHART Alternate Manufacturer Part # Description SEEQ Part # AMD AM27PS291DC 2K X 8 PROM AMD AM27PS291DM 2K X 8 PROM 36C16-55 AMD AM27PS291ADM 2K X 8 PROM 36C16-55 36C16-35 36C16-45 AMD AM27S291ADC 2K X 8 PROM CYPRESS CY7C291-35
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AM27PS291DC
AM27PS291DM
AM27PS291ADM
AM27S291ADC
CY7C291-35
CY7C291-50
MB7138Y-SKZ
MB7138H-SKZ
MB7138E-WZ
63S1681NS
raytheon
MB7138H-SK
27C291-50
SIGNETICS prom
63S1681N
57C29-1
57C291-55
63S1681ANS
HARRIS PROM
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R29671
Abstract: R29681/R29681A raytheon prom
Text: RAY THE ON/ SEMICONDUCTOR HE D | 000Í.S37 t. | Product Specifications R29000 Series R a y th e o n R29000 Series Standard Performance PROMs and Power-Switched SPROMs Features/Benefits • All devices are available in both commercial
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R29000
R29671M:
R29671
R29631
R29631C:
R29613/R29613A
R29681/R29681A
raytheon prom
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Untitled
Abstract: No abstract text available
Text: R29000 Series Standard Performance PROMs and Power-Switched SPROMs fuses and low power Schottky technology. The devices are shipped with all bits in the HIGH logical ONE state. To achieve a LOW state in a given bit location the nichrome link is fused open by passing a short, high current pulse
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R29000
/883B
MIL-STD-883,
I-053
120ns
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OA128
Abstract: No abstract text available
Text: Product Specifications PROMs/SPROMs R29700 Series R a y ttM M 4096 x 8 R29771/R29773 Standard PROMs and Power-Switched SPROMs Features/Benefits • Devices are available in both commercial <0°C to +75°C and military -55°C to +125°C) temperature range
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R29700
R29771/R29773
24-pin,
35ipment
OA128
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