S202DS2
Abstract: S202DS4 S102DS2 SHARP S202DS4 s201s01 SHARP S201S02 s201s02 S202DS4 SHARP IS1621 pc111ys
Text: Obsolete Optoelectronics Products and Replacement Part Numbers Subcategory Model SHARP Replacement Part Detector BS100D BR100C Detector BS100G1 BR100C Detector BS120R BR120 Detector BS521 BR520 Detector GA100T802MZ GA100T802MZ1 Detector GA100T8R1MZ GA100T8R2MZ
|
Original
|
PDF
|
BS100D
BR100C
BS100G1
BS120R
BR120
BS521
BR520
GA100T802MZ
GA100T802MZ1
S202DS2
S202DS4
S102DS2
SHARP S202DS4
s201s01
SHARP S201S02
s201s02
S202DS4 SHARP
IS1621
pc111ys
|
phototransistor sharp
Abstract: PT420F
Text: S HARP ELEK/ MELEC DIV 15E D I 01007^0 0ÜG27Î.3 fl I Phototransistor PT420F • 1. PT 420F / - t / - / - ù> ì Intermediate Acceptance Phototransistor Outline Dimensions Features 2. Intermediate acceptance epoxy resin pack age A 6 : TYP. ± 4 0 ”
|
OCR Scan
|
PDF
|
PT420F
PT420F
T-41-61
phototransistor sharp
|
Untitled
Abstract: No abstract text available
Text: SHARP ELEK/ MELEC DIV 15E D I 01007^0 0ÜG27Î.3 fl I Phototransistor PT420F • 1. PT420F / - t-f-ì- Ù> ì Intermediate Acceptance Phototransistor Outline Dimensions Features 2. Intermediate acceptance epoxy resin pack age A 6 : TYP. ± 40” Visible light cut-off type
|
OCR Scan
|
PDF
|
PT420F
|
4111
Abstract: 5m diode SJ 76 A DIODE
Text: SHARP ELEK/ MELEC DIV 1SE 0 I a iflC H H fl 0002^0 Infrared Light Emitting Diode GL420 • 6 | GL420 Resin Mold Type Infrared Light Emitting Diode Features ■ Outline Dimensions U n it: mm 1. Intermediate beam angle (Ad: TYP. ±30°) 2. High output (3>e : MIN. 0.75mW at IF=20mA)
|
OCR Scan
|
PDF
|
GL420
T-41-11
PT420F)
4111
5m diode
SJ 76 A DIODE
|
16AA2
Abstract: GL420 PT420F
Text: SHARP ELEK/ MELEC DIV 1SE 0 I 01007=10 a D 0 2 b 4 0 Infrared Light Emitting Diode GL420 • fl | GL420 Resin Mold Type Infrared Light Emitting Diode Features 1. 2. 3. Intermediate beam angle A0: T Y P . ±30° High output (<De : MIN. 0.75mW at IF=20m A )
|
OCR Scan
|
PDF
|
0002b40
GL420
GL420
T-41-11
PT420F)
16AA2
PT420F
|