Untitled
Abstract: No abstract text available
Text: DC1204E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DC1204E
Power30m
Voltage15
Current130m
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Untitled
Abstract: No abstract text available
Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC8200
Power33
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Untitled
Abstract: No abstract text available
Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC8200
Power33
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led flashlight
Abstract: sm power3 SGOLD3
Text: Pr oduc t Br ief P M B 6 821 SM -Power3 - Highly Integrated Power Ma nagement Units fo r Feature Rich Mobile De vi ces S M - P O W E R 3 extends the SM-Power family with a new highly integrated power management IC. It is optimized to support mobile devices
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B134-H8836-X-X-7600
led flashlight
sm power3
SGOLD3
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POWER33
Abstract: IPCA610D sac 305 IPC-SM-7525A J-STD-001C IPC-A-610D IPC-4101B FDMC8554 IPC-7525 FDMC2523P
Text: AN-9040 Assembly Guidelines for Power33 Packaging By Dennis Lang INTRODUCTION BOARD MOUNTING The Fairchild Power33 uses a flat leaded package to achieve SO-8 type performance in a form factor that is 70% smaller. This packaging technology has been increasingly used for power related
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AN-9040
Power33
IPC-A-610-D,
J-STD-001D,
IPC-SM-7525A,
JESD22-B102D,
FDM3622,
FDM6296,
FDMC2523P,
IPCA610D
sac 305
IPC-SM-7525A
J-STD-001C
IPC-A-610D
IPC-4101B
FDMC8554
IPC-7525
FDMC2523P
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Untitled
Abstract: No abstract text available
Text: TEO124 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power300m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StyleN/A Mounting Style-
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TEO124
Power300m
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FDMC8200S
Abstract: Power33 byr10-100
Text: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC8200S
power33
FDMC8200S
byr10-100
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Untitled
Abstract: No abstract text available
Text: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC8200S
power33
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Untitled
Abstract: No abstract text available
Text: PG0115X Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage40 I(Oper.) Typ.(A) Oper. Current Semiconductor Material Package StylePill-C Mounting StyleS
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PG0115X
Power30m
Voltage40
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Untitled
Abstract: No abstract text available
Text: FDMC7200 Dual N-Channel PowerTrench MOSFET 30 V, 12 mΩ and 23.5 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 23.5 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC7200
Power33
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Untitled
Abstract: No abstract text available
Text: DC1254E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current200m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DC1254E
Power30m
Voltage15
Current200m
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Untitled
Abstract: No abstract text available
Text: PGG206-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power300m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage100 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG206-83
Power300m
Voltage100
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6TPF330M9L
Abstract: 6TPF330M 6TPD470M sanyo 6TPF330M9L KTS250B336M55N0T00 6TPF330M9L SANYO POWER56 FAN5236 BAT54 R718
Text: FAIRCHILD SEMICONDUCTOR DUAL POWER56/POWER33DEMO BOARD 1. Description The Dual Power56 and Power33 demo board uses Fairchild Semiconductor’s FAN5236 controller. It may be used to evaluate the performance of Fairchild’s new Power33 3x3MLP and Dual-Power56 (5x6MLP 2-in-1) MOSFETS. The
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POWER56/POWER33DEMO
Power56
Power33
FAN5236
Power33
Dual-Power56
V-21V
2FFAN5236
6TPF330M9L
6TPF330M9L
6TPF330M
6TPD470M
sanyo 6TPF330M9L
KTS250B336M55N0T00
6TPF330M9L SANYO
BAT54
R718
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Untitled
Abstract: No abstract text available
Text: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC7200S
power33
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sot-23 pinout
Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Text: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx
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Power33
Power56
FAN73xx
FAN4800
sot-23 pinout
431 sot23-5
FAN21SV06
11n60f
FAN7385
FAN7382
FAN7380
fan3000
5N60 datasheet
4N60 fairchild
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DIN 6120
Abstract: ECMA-109 iso 9995 keyboard
Text: Swedish IT-companies´ Organisation Sweden Norwegian Office and IT-companies Organisation Norway IT-Brancheforeningen Kontor & Data Denmark Version June 1998 ECO Declaration DK, NO, SE Model Brand 7044 - 170 Product type RS/6000 Manufacturer 64Bit copper Power3-II Microprocessor
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RS/6000
64Bit
DIN 6120
ECMA-109
iso 9995 keyboard
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Untitled
Abstract: No abstract text available
Text: TEPO25 Diodes Pulse-Mode Gunn Diode P o Min.(W) Output Power30 Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current7.0 Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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TEPO25
Power30
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Untitled
Abstract: No abstract text available
Text: FDMC7200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 22 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing
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FDMC7200S
power33
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CQ116
Abstract: FDMC8200
Text: FDMC8200 Dual N-Channel PowerTrench MOSFET 30 V, 9.5 mΩ and 20 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 20 mΩ at VGS = 10 V, ID = 6 A dual Power33 (3mm x 3mm MLP) package. The switch node
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FDMC8200
Power33
CQ116
FDMC8200
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ADCC
Abstract: EVAL-ADF7023-JDB1Z ADF70 wireless encrypt EVAL-ADF7023-JDB2Z CRC-16-IBM LOG TX 2 1033 14 pin IC
Text: Data Sheet High Performance, Low Power, ISM Band FSK/GFSK/MSK/GMSK Transceiver IC ADF7023-J FEATURES Ultralow power, high performance transceiver Frequency bands: 902 MHz to 958 MHz Data rates supported: 1 kbps to 300 kbps 2.2 V to 3.6 V power supply Single-ended and differential power amplifiers PAs
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ADF7023-J
8b/10b
128-bit
Reed-SoF7023-JDB1Z
EVAL-ADF7023-JDB2Z
32-Lead
33009-A
CP-32-13
CP-32-13
ADCC
EVAL-ADF7023-JDB1Z
ADF70
wireless encrypt
EVAL-ADF7023-JDB2Z
CRC-16-IBM
LOG TX 2 1033 14 pin IC
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Untitled
Abstract: No abstract text available
Text: Coaxial Precision Fixed Attenuator 50Ω 2W 15dB Maximum Ratings Operating Temperature DC to 18000 MHz Features -55°C to 100°C Storage Temperature BW-S15W2+ -55°C to 100°C* *With mated connectors, unmated, 85°C max. • DC to 18000 MHz • precise attenuation
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BW-S15W2+
FF659
2002/95/EC)
M98898
EE-7120
BW-S15W2
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Untitled
Abstract: No abstract text available
Text: Coaxial Precision Fixed Attenuator 50Ω 2W 1dB Maximum Ratings BW-S1W2+ DC to 18000 MHz Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C* *With mated connectors, unmated, 85°C max. • DC to 18000 MHz • precise attenuation
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FF658
2002/95/EC)
M98898
EE-7120
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC 61C POWER3 TRANSISTORSTR0N D E V Ip E S INC SP45C1 SP45C2 SP45C3 SP45G4 SP45C7 SP45C8 SP45G9 SP45C10 SP45C5 SP45C11 OHIO SP45C6 ~ SP45C12 T - 3 3~/f PNP SILICON POWER TRANSISTORS MEDIUM POWER 4 AMPERES FEATURES PLANAR CONSTRUCTION MEDIUM POWER
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SP45C1
SP45C2
SP45C3
SP45G4
SP45C7
SP45C8
SP45G9
SP45C10
SP45C5
SP45C11
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WTL1232
Abstract: WTL1233 tcl 1232 Weitek 1233 L1232 weitek 1233-8 268-5400 weitek IC to design 2 by 2 binary multiplier 3332 weitek
Text: W E IT E K ^ J WTL1232/WTL1233 FLOATING POINT MULTIPLIER AND ALU July, 1986 TheWTL 1232floatingpoint multi plier and the WTL 1233 floating point ALU provide high speed, low power32-bitnumericprocessing. In the highest speed grades, each chip delivers 10MFLOP singleprecision
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WTL1232/WTL1233
power32-b
32-BIT
1232-X
/1233-X
1232-YY-JM
/1233-YY-JM
1232-YY-JE/1233-YY-JE
1232-XX-LC
WTL1232
WTL1233
tcl 1232
Weitek 1233
L1232
weitek 1233-8
268-5400
weitek
IC to design 2 by 2 binary multiplier
3332 weitek
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