Untitled
Abstract: No abstract text available
Text: PGG205-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG205-83
Power200m
Voltage90
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Untitled
Abstract: No abstract text available
Text: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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ML4941
Power200m
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Untitled
Abstract: No abstract text available
Text: DGB8241 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8241
Power20m
Current220m
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Untitled
Abstract: No abstract text available
Text: DC1204C Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DC1204C
Power20m
Voltage15
Current130m
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Untitled
Abstract: No abstract text available
Text: VAO32EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current33m Semiconductor MaterialSilicon Package StylePill-C
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VAO32EN22
Power200m
Voltage110
Current33m
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Untitled
Abstract: No abstract text available
Text: DGB8244 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8244
Power20m
Current220m
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Untitled
Abstract: No abstract text available
Text: DGB8255 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)26.5G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8255
Power20m
Current300m
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Untitled
Abstract: No abstract text available
Text: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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MS856B
Power200m
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Untitled
Abstract: No abstract text available
Text: PGG205-82 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew
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PGG205-82
Power200m
Voltage90
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Untitled
Abstract: No abstract text available
Text: VAO12EN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-C
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VAO12EN21
Power200m
Voltage80
Current45m
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Untitled
Abstract: No abstract text available
Text: DGB8532 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)12.4G Frequency Max. (Hz)16G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current700m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8532
Power200m
Current700m
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Untitled
Abstract: No abstract text available
Text: DGB8213 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8213
Power20m
Voltage12
Current150m
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Untitled
Abstract: No abstract text available
Text: VSX9251S2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power20 Frequency Min. (Hz)8G Frequency Max. (Hz)10G Efficiency Min.21 V(Oper.) Nom.(V) Oper. Voltage64 I(Oper.) Typ.(A) Oper. Current1.5 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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VSX9251S2
Power20
Voltage64
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Untitled
Abstract: No abstract text available
Text: DGB8214 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT
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DGB8214
Power20m
Voltage12
Current150m
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Untitled
Abstract: No abstract text available
Text: VAO12EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-B
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VAO12EN22
Power200m
Voltage80
Current45m
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Untitled
Abstract: No abstract text available
Text: GC5647A Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)4.0G Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current530m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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GC5647A
Power200m
Voltage15
Current530m
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Untitled
Abstract: No abstract text available
Text: DGB8211 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS
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DGB8211
Power20m
Voltage12
Current150m
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Untitled
Abstract: No abstract text available
Text: VSQ9119S2 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz) Frequency Max. (Hz)44GÂ Efficiency Min.10 V(Oper.) Nom.(V) Oper. Voltage11 I(Oper.) Typ.(A) Oper. Current200m Semiconductor MaterialInP Package StyleScrew Mounting StyleT
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VSQ9119S2
Power200m
Voltage11
Current200m
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Untitled
Abstract: No abstract text available
Text: 1 Thin-Film Technology ® Accu-F / Accu-P Thin-Film RF/Microwave Capacitors 5 Accu-F® / Accu-P® Thin-Film Technology THE IDEAL CAPACITOR 1 The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance
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100MHz)
330mm
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cn/A/U 237 BG
Abstract: No abstract text available
Text: www.avx.com AVX RF Microwave Products Version 15.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and
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S-RFMTF0M115-C
cn/A/U 237 BG
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EN25q
Abstract: EN25Q32 EN25Q32A FLASH 16 Mbit cFeon
Text: EN25Q32A EN25Q32A 32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation
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EN25Q32A
M-bit/4096
K-byte/16384
100MHz
80MHz
Power2009/10/13
EN25q
EN25Q32
EN25Q32A
FLASH 16 Mbit cFeon
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srf 1714
Abstract: Srf 1427 Transformer 8 948 411 098 Sn90-Pb10 47056 107E 204D walkie-talkie srf 1616 AVX 620 102M
Text: Accu-F / Accu-P® Thin-Film Technology THE IDEAL CAPACITOR 1 The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance to the capacitor and dielectric and metal electrodes result in resistive losses, but these often are of negligible effect on the
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100MHz)
srf 1714
Srf 1427
Transformer 8 948 411 098
Sn90-Pb10
47056
107E
204D
walkie-talkie
srf 1616
AVX 620 102M
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SMD CAPACITORS 107E
Abstract: CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101
Text: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,
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QV2000
S-RFMTF17M898-N
SMD CAPACITORS 107E
CDR11BP
hewlett packard semiconductor cross reference
smd code marking 561B
6647a
SMD transistor 431a
TRANSISTOR B560
uhf wireless mic circuits
CDR11BP datasheet
lambda IC 101
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am29203 "evaluation board"
Abstract: L0512 MV8000 TTL catalog CL1101 8038 ic tester circuit diagram tl 2345 ml gcr encoder parallel bus arbitration 30GRAMMABLE
Text: PROGRAMMABLE ’ROGRAMMABLE 30GRAMMABLE L DGRAMMABLE LG 3RAMMABLE LOG ÏRAMMABLE LOGI ÌAMMABLE LÄGIC a Advanced Micro Devices Programmable Array Logic Handbook Prepared by the Product Planning and Applications Staff at Advanced M icro Devices, Inc. Brad Kitson, Editor
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OCR Scan
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PDF
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30GRAMMABLE
I-20090
S-172
am29203 "evaluation board"
L0512
MV8000
TTL catalog
CL1101
8038 ic tester circuit diagram
tl 2345 ml
gcr encoder
parallel bus arbitration
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