POWER TRANSISTOR IN 3055 Search Results

POWER TRANSISTOR IN 3055 Result Highlights (5)

Part	Manufacturer	Description
BLF	Rochester Electronics	BLF278 - VHF Push-Pull Power VDMOS Transistor
RX1214B300YI	Rochester Electronics LLC	RX1214B300Y - Microwave Power Transistor (Ampleon Die)
BLF1043	Rochester Electronics LLC	BLF1043 - UHF10W Power LDMOS Transistor (Ampleon Die)
ON5040	Rochester Electronics LLC	ON5040 - RF Power Transistor (Ampleon Die)
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns

POWER TRANSISTOR IN 3055 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
jfs series Abstract: lambda transistor transistor 3055 Lambda instruction manual power transistor 3055 500w power inverter circuit diagrams power transistor IN 3055 3055 transistor 3055 IEC1000-4-5 Text: INSTRUCTION MANUAL JFS0500 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 LAMBDA ELECTRONICS INCOPORATED 3055 DEL SOL BOULEVARD , SAN DIEGO , CA 92154-3474 • TEL: 619-575-4400 • FAX: 619-575-7185 IMJFS05 – REV D	Original	PDF	JFS0500 IMJFS05 JFS0500: jfs series lambda transistor transistor 3055 Lambda instruction manual power transistor 3055 500w power inverter circuit diagrams power transistor IN 3055 3055 transistor 3055 IEC1000-4-5
jfs series Abstract: transistor 3055 1000w inverter power transistor IN 3055 3055 transistor 1000W TRANSISTOR jfs100048 power transistor 3055 power inverters 500w JFS1000-24 Text: INSTRUCTION MANUAL JFS1000 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 P/N: IMJFS10 Rev. D DATE: July 2005 JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS1000: I. MAXIMUM RATINGS	Original	PDF	JFS1000 IMJFS10 JFS1000: IMJFS10 jfs series transistor 3055 1000w inverter power transistor IN 3055 3055 transistor 1000W TRANSISTOR jfs100048 power transistor 3055 power inverters 500w JFS1000-24
jfs series Abstract: JFS2000-24 power transistor IN 3055 power transistor 3055 transistor 3055 IEC1000-3-2 IEC1000-4-5 JFS2000-48 LAMBDA power supply 1275 1500w 220VAC to 24VDC power supply Text: INSTRUCTION MANUAL JFS2000 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 P/N: IMJFS20 Rev. D DATE: July 2005 JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS2000: I. MAXIMUM RATINGS	Original	PDF	JFS2000 IMJFS20 JFS2000: IMJFS20 jfs series JFS2000-24 power transistor IN 3055 power transistor 3055 transistor 3055 IEC1000-3-2 IEC1000-4-5 JFS2000-48 LAMBDA power supply 1275 1500w 220VAC to 24VDC power supply
jfs series Abstract: transistor 3055 JFS-1500-48 JFS1500-48 3055 transistor LAMBDA power supply 1275 1500w power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS1500-24 Text: INSTRUCTION MANUAL JFS1500 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 P/N: IMJFS15 Rev. D DATE: July 2005 JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS1500: I. MAXIMUM RATINGS *	Original	PDF	JFS1500 IMJFS15 JFS1500: JFS1500-24 JFS1500-48 jfs series transistor 3055 JFS-1500-48 JFS1500-48 3055 transistor LAMBDA power supply 1275 1500w power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS1500-24
jfs series Abstract: JFS0750-48 power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS0750-24 DARLINGTON MANUAL lambda overvoltage protection lambda transistor labor netzteil Text: INSTRUCTION MANUAL JFS0750 SERIES POWER SUPPLY 3055 Del Sol Blvd San Diego, Ca. 92154 Phone 619 575-4400 Fax (619) 575-7185 IMJFS07 – REV D JFS SERIES INSTRUCTION MANUAL RATINGS AND SPECIFICATIONS FOR LAMBDA MODEL NO. JFS0750: I. MAXIMUM RATINGS SPECIFICATION	Original	PDF	JFS0750 IMJFS07 JFS0750: jfs series JFS0750-48 power transistor 3055 power transistor IN 3055 IEC1000-4-5 JFS0750-24 DARLINGTON MANUAL lambda overvoltage protection lambda transistor labor netzteil
3055t Abstract: MJE2955T MJE305 MJE3055T 75W PNP Text: MJE2955T, 3055T Complementary Power Transistors Complementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation-PD = 75W at TC = 25°C. • DC current gain hFE = 20 Minimum at IC = 4.0A.	Original	PDF	MJE2955T, 3055T 400mA. 3055t MJE2955T MJE305 MJE3055T 75W PNP
transistor 3055 Abstract: DIODE IN 3055 TR 3055 6N135 6N136 VDE0884 Text: 6N135-3054/6N136-3055 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output FEATURES • • • • NC 1 8 C VCC B (VB) A 2 7 C 3 6 C (VO) NC 4 5 E (GND) i179081 DESCRIPTION The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with	Original	PDF	6N135-3054/6N136-3055 i179081 6N135 6N136 08-Apr-05 transistor 3055 DIODE IN 3055 TR 3055 VDE0884
transistor 3055 Abstract: 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055 Text: 2 N 3055 NPN Transistor for high-power A F output stages 2 N 3 0 5 5 is a single-diffused N P N silicon transistor in a case 3 A 2 D IN 4 1 8 7 2 T O -3 . The collector is electrically connected to the case. The transistor is particularly designed for use iri high -pow er A F output stages and in stabilized pow er supplies.	OCR Scan	PDF	62702-U Q62901-B 45toi< 200mA 100mA -10mA transistor 3055 3055 transistor 2N3055 power transistor 3055 3055 n3055 3055 npn e 3055 t transistor C200 L 3055
Untitled Abstract: No abstract text available Text: bbS3T31 0030550 T5T H A P X N AUER PHILIPS/DISCRETE Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in	OCR Scan	PDF	bbS3T31 -SOT186 BUK445-60A/B BUK445
Untitled Abstract: No abstract text available Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching	OCR Scan	PDF	TIP2955 TIP3055 TIP3055 O-218 TIP2955. P2955/TIP3055 O-218 OT-93)
mj2955 Abstract: No abstract text available Text: 2N3055 MJ2955 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY NPN-PNP DEVICES DESCRIPTION The 2N3055 is a silicon Epitaxial-Base Planar NPN transistor mounted in Jedec TO-3 metal case. It is intended for power switching circuits, series	OCR Scan	PDF	2N3055 MJ2955 2N3055 MJ2955. SC08820 SC08830 P003F mj2955
DA 2688 Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688 Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055	OCR Scan	PDF	TIP3055 TIP2955 T0-218AA 7S265 DA 2688 transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
TP3055E Abstract: No abstract text available Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Advance Inform ation TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor This advanced " E " series o f TM O S p o w e r MOSFETs is designed to w ith s ta n d hig h ene rg y in th e avalanche and c o m m u ta tio n m odes. These n ew ene rg y e fficie n t devices	OCR Scan	PDF	MTP3055E TP3055E
Motorola transistors MJE3055 Abstract: Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit MJE2955 mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD 2955 Com plem entary Power Transistors PNP M JD 3055 DPAK For Surface Mount Applications ‘ Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. • • • •	OCR Scan	PDF	MJE2955 MJE3055 1Ol50Â MJD6036 MJD3039 Motorola transistors MJE3055 Motorola transistors MJE2955 IC TC 3588 MJE2955 power amplifier circuit mje3055 transistor MJE3055 1N5825 MJD2955 30 amp npn transistor

transistor mj 3055 Abstract: d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data Text: MOTOROLA Order this document by MJ D2955/D SEMICONDUCTOR TECHNICAL DATA PNP M JD 2955 Com plem entary Power Transistors NPN M JD 3055 DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. • • •	OCR Scan	PDF	D2955/D MJE2955 MJE3055 transistor mj 3055 d2955 transistor Amp 3055 Motorola transistors MJE3055 TO 127 mje3055 127 case data Motorola transistors MJE3055 Motorola transistors MJE2955 transistor 30 j 127 L 3055 motorola mje2955 data
2955T Abstract: JE3055T 3055t JE3055 je 3055t JE2955T AN415A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP M JE 2955T* Complementary Silicon Plastic Power Transistors UPI! M JE 3055T* . . . designed for use in general-purpose amplifier and switching applications. • • *MotoroU Preferred Dtvlct DC Current Gain Specified to 10 Amperes	OCR Scan	PDF	2955T* 3055T* MJE3055T, MJE2955T MJE2955T 2955T JE3055T 3055t JE3055 je 3055t JE2955T AN415A
J2955 Abstract: j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA M J2955 See 2N 3055 M J2955A (See 2N 3055A ) M edium -Pow er Com plem entary Silicon Transistors M J2500 . . . for use as output devices in complementary general purpose amplifier applica	OCR Scan	PDF	MJ2500/D J2955 J2955A J2500 J2501* J3000 J3001* O-204AA J2955 j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor
3055 transistor Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055 Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for	OCR Scan	PDF	D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
3055 transistor Abstract: transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3 Text: 2SC T> m flS3SbOS D004T11 * mZI ZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful AF Output Stages 2 N 3055 -SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for	OCR Scan	PDF	D004T11 Q62702-U58 005ms aa35b05 3055 transistor transistor 3055 3055 2N3055 2SC 2276 M 3055 power transistor n3055 2N3066 power transistor 3055 33S3
2n3055 motorola Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055 Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N3055/D NPN 2N 3055* C om plem entary Silicon Pow er Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • 'Motorola Preferred Device DC Current Gain — hpE = 2 0 -7 0 @ lc = 4 Adc	OCR Scan	PDF	by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
3055vl Abstract: Motorola 3055vl 3055vl motorola Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This	OCR Scan	PDF	MTD3055VL/D 3055VL 3055vl Motorola 3055vl 3055vl motorola
2SC3055 Abstract: E3 37497 2sc3055 transistor high power switching transistor Text: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*	OCR Scan	PDF	2SC3055 2SC3055 laC3055 374CJ7LB T-33-07 E3 37497 2sc3055 transistor high power switching transistor
8 pin ic 3773 Abstract: No abstract text available Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442	OCR Scan	PDF	E3B33c 000DQ5M lo-32 8 pin ic 3773
3055 Abstract: 3055 npn A 3055 transistor 3055 Text: 4 S i» 2 N 3055 'V Diffundierter Silizium-NPN-Mesa-Leistungstransistor Diffused Silicon NPN Mesa Power Transistor Anwendungen: Schalter hoher Leistung und NF-Endstufen Applications: High power switching and AF-output stages Besondere M erkm ale: Features:	OCR Scan	PDF

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POWER TRANSISTOR IN 3055 Search Results

POWER TRANSISTOR IN 3055 Result Highlights (5)

POWER TRANSISTOR IN 3055 Datasheets Context Search

jfs series

jfs series

jfs series

jfs series

jfs series

3055t

transistor 3055

transistor 3055

Untitled

Untitled

mj2955

DA 2688

TP3055E

Motorola transistors MJE3055

transistor mj 3055

2955T

J2955

3055 transistor

3055 transistor

2n3055 motorola

3055vl

2SC3055

8 pin ic 3773

3055