power transistor Ic 4A NPN to - 251
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability
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TSC5804D
O-251
O-252
TSC5804DCH
TSC5804DCP
O-251
75pcs
power transistor Ic 4A NPN to - 251
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN Transistor 450v 1A
transistor a13
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marking c08
Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
marking c08
C08 marking
250V transistor npn 2a
BM 0228
marking code C5
power transistor Ic 4A NPN to - 251
1A MARKING CODE
C5 MARKING TRANSISTOR
marking code B2
NPN Silicon Power Transistor DPAK
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TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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TSC5304ED
Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304ED
power transistor Ic 4A NPN to - 251
TSC5304EDCP
transistor c10
TO-252 marking C10
marking C10
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5210 diode
Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
5210 diode
NPN Silicon Power Transistor DPAK
npn transistors 400V low power
TSC5304D
TSC5304DCH
TSC5304DCP
C5 MARKING TRANSISTOR
L 0814
CW68
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MJE3055
Abstract: MJE3055T MJE3055T-TA3-T MJE3055T-TM3-T MJE3055T-TN3-R
Text: UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 1 TO- 251 The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-252 1 TO-220 *Pb-free plating product number:MJE3055TL
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MJE3055T
MJE3055T
O-252
O-220
MJE3055TL
MJE3055T-TA3-T
MJE3055TL-TA3-T
MJE3055T-TM3-T
MJE3055TL-TM3-T
MJE3055T-TN3-R
MJE3055
MJE3055T-TA3-T
MJE3055T-TM3-T
MJE3055T-TN3-R
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transistor MJE3055
Abstract: MJE3055
Text: MJD3055 NPN TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER Features 1 2 3 Designed for general purpose amplifier and low speed switching applications . Electrically simiar to MJE3055. TO-252-2L DC current gain specified to10 Amperes MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-251/TO-252-2L
MJD3055
O-251
MJE3055.
O-252-2L
500KHZ
transistor MJE3055
MJE3055
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Untitled
Abstract: No abstract text available
Text: MJD122 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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MJD122
O-251/TO-525-2L
O-251
TIP122
O-252-2L
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npn ie 4a
Abstract: TIP127 NPN Transistor 8A
Text: MJD127 NPN TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
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O-251/TO-252-2L
MJD127
O-251
TIP127
O-252-2L
-30mA
-100V
-16mA
-80mA
npn ie 4a
NPN Transistor 8A
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Darlington Transistor TO251
Abstract: to-252-2
Text: MJD112 NPN TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TO-252-2L Value
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MJD112
O-251/TO-525-2L
O-251
O-252-2L
500mA
Darlington Transistor TO251
to-252-2
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200V transistor npn 2a
Abstract: T2096 T2096L-TM3-T T2096-TM3-T TO-251 Package QW-R21
Text: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES
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T2096
T2096
O-251
T2096L
T2096-TM3-T
T2096L-TM3-T
QW-R213-017
200V transistor npn 2a
T2096L-TM3-T
T2096-TM3-T
TO-251 Package
QW-R21
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD T2096 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications. FEATURES
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T2096
T2096
O-251
T2096-TM3-T
T2096L-TM3-T
T2096-TN3-T
T2096L-TN3-T
T2096-TN3-R
T2096L-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD T2096 NPN SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON The T2096 is a NPN Silicon Planar Transistors in TO-251 package. It is intended for high voltage, switching power supply and industrial applications.
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T2096
T2096
O-251
T2096L
T2096-TM3-T
T2096L-TM3-T
QW-R213-017
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR NPN TO-251 FEATURES z Designed for General Purpose Amplifier and Low Speed Switching Applications 1.BASE 2.COLLECTOR z Electrically Simiar to MJE3055
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O-251
MJD3055
O-251
MJE3055
500KHZ
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TRANSISTOR tip122
Abstract: MJD122 TIP122 TO252-2
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors MJD122 TO-251 TO-252-2 TRANSISTOR NPN FEATURES 1. BASE • · · High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C
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O-251/TO-252-2
MJD122
O-251
O-252-2
TIP122
TRANSISTOR tip122
MJD122
TIP122
TO252-2
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD127 TRANSISTOR NPN FEATURES • · · 1. BASE High DC current gain Electrically similar to popular TIP127 Built-in a damper diode at E-C 2. COLLECTOR
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O-251/TO-252-2Plastic-Encapsulate
O-251
O-252-2
MJD127
TIP127
-100V
-16mA
-80mA
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MJE3055
Abstract: transistor MJE3055 500KHZ MJD3055
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252 Plastic-Encapsulate Transistors MJD3055 TRANSISTOR NPN TO-251 TO-252-2L FEATURES z Designed for general purpose amplifier and low speed switching applications . 123 1.BASE z Electrically simiar to MJE3055.
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O-251/TO-252
MJD3055
O-251
O-252-2L
MJE3055.
500KHZ
MJE3055
transistor MJE3055
500KHZ
MJD3055
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power transistor Ic 4A NPN to - 251
Abstract: MID122
Text: DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning .268 6.80 .252(6.40) 1 = Base 2 = Collector
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MID122
O-251
power transistor Ic 4A NPN to - 251
MID122
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors TO-251 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary Darlington Power Transistors Dpak for Surface Mount Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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O-251
O-251
MJD112
500mA
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Darlington Transistor TO251
Abstract: MJD112
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/TO-252-2 Plastic-Encapsulate Transistors TO-251 TO-252-2 MJD112 TRANSISTOR NPN 1. BASE FEATURES y Complementary darlington power transistors dpak for surface mount applications 2. COLLECTOR 3. EMITTER
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O-251/TO-252-2
O-251
O-252-2
MJD112
500mA
Darlington Transistor TO251
MJD112
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD122 TRANSISTOR（NPN） TO-251-3L FEATURES 1.BASE ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C 2.COLLECTOR
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O-251-3L
MJD122
O-251-3L
TIP122
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HI122
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HI200102 Issued Date : 1998.07.01 Revised Date : 2003.04.14 Page No. : 1/2 MICROELECTRONICS CORP. HI122 NPN EPITAXIAL PLANAR TRANSISTOR Description TO-251 The HI122 is designed of general purpose and low speed switching applications.
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HI200102
HI122
O-251
HI122
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2STD1665
Abstract: 2STD1665-1 2STD1665T4 D1665 JESD97 power transistor Ic 4A NPN to - 251
Text: 2STD1665 Low voltage fast-switching NPN power transistor General features • Very low collector to emitter saturation volatage ■ High current gain characteristic fast-switching speed ■ Through-hole IPAK TO-251 power package in tube (suffix”-1”)
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2STD1665
O-251)
O-252)
2STD1665
2STD1665-1
2STD1665T4
D1665
JESD97
power transistor Ic 4A NPN to - 251
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