Untitled
Abstract: No abstract text available
Text: CPC1580 Optically Isolated Gate Drive Circuit Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the power MOSFET transistor is accomplished by the
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CPC1580
CPC1580
3750Vrms
DS-CPC1580-R00D
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E-MOSFET
Abstract: emosfet
Text: CPC1580 Optically Isolated Gate Drive Circuit Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the power MOSFET transistor is accomplished by the
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CPC1580
3750Vrms
CPC1580
DS-CPC1580-R00F
E-MOSFET
emosfet
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CPC1580P
Abstract: Overvoltage Protection Element CPC1580 CPC1580PTR EIA-481-2
Text: CPC1580 Optically Isolated Gate Drive Circuit Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the power MOSFET transistor is accomplished by the
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CPC1580
CPC1580
3750Vrms
DS-CPC1580-R00G
CPC1580P
Overvoltage Protection Element
CPC1580PTR
EIA-481-2
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Untitled
Abstract: No abstract text available
Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Figure 1: BAP1551 IGBT Gate Driver Board Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB)
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BAP1551
LM-35
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fet irf830
Abstract: MTM4N45
Text: IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds
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IRF830
IRF830/D
fet irf830
MTM4N45
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single phase half bridge inverter
Abstract: IGBT gate drive board fire sensor LM35 single phase IGBT based PWM inverters LEM sensor CURRENT single phase igbt based inverter 200 amps circuit board 5045-04A single phase igbt based inverter 200 amps circuit lem HA Lm35 with application note
Text: APPLIED POWER SYSTEMS, INC. BAP1551 Gate Drive Board BAP1551 Gate Drive Board Application Note and Datasheet for Half Bridge Inverters Patent Pending Introduction The BAP1551 Insulated Gate Bipolar Transistor IGBT Gate Drive Board (GDB) discussed in this Datasheet/Applications Note provides a safe, reliable, isolated interface between control
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BAP1551
LM-35
single phase half bridge inverter
IGBT gate drive board
fire sensor LM35
single phase IGBT based PWM inverters
LEM sensor CURRENT
single phase igbt based inverter 200 amps circuit board
5045-04A
single phase igbt based inverter 200 amps circuit
lem HA
Lm35 with application note
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Untitled
Abstract: No abstract text available
Text: CPC1580 Optically Isolated Gate Drive Circuit INTEGRATED CIRCUITS DIVISION Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the
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CPC1580
CPC1580
3750Vrms
DS-CPC1580-R01
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G45GEM-HF-3 Insulated Gate Bipolar Power Transistor High Input Impedance High Peak Current Capability 450V VCE C C I CP 130A C C Low 3.3V Gate Drive Strobe Flash Applications E SO-8 RoHS-compliant, halogen-free package
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AP28G45GEM-HF-3
AP28G45
28G45GEM
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G45GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability G E E 400V VCE High Input Impedance E I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package C C
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AP28G45GEO-HF-3
AP28G45
28G45GEO
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP26G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package
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AP26G40GEO-HF-3
AP26G40
26G40GEO
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP30G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low 3.0V Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package
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AP30G40GEO-HF-3
AP30G40
30G40GEO
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AP28G40GEO-HF-3
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP28G40GEO-HF-3 Insulated Gate Bipolar Power Transistor High Peak Current Capability C C C 400V VCE High Input Impedance C I CP 150A Low Gate Drive Strobe Flash Applications TSSOP-8 RoHS-compliant, halogen-free package E E
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AP28G40GEO-HF-3
AP28G40
28G40GEO
AP28G40GEO-HF-3
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1w5301
Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial
Text: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1
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AN-944
1w5301
1n414b
AN-944
1W530
high voltage gate drive transformer
IC not gate data sheet
DS0026
IRF130
AN944
transistor bipolar superficial
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431 transistor
Abstract: CPC1580P
Text: CPC1580 Optically Isolated Gate Drive Circuit INTEGRATED CIRCUITS DIVISION PRELIMINARY Features Description • • • • • • • The CPC1580 optical gate driver provides isolated control of a discrete power MOSFET transistor without the need of an external power supply. Control of the
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3750Vrms
CPC1580
CPC1580
DS-CPC1580-R00H
431 transistor
CPC1580P
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vqe 24 d
Abstract: vqe 24 e VQE 23 E vqe 23 vqe 14 E VQE 21 d vqe 23 f vqe 23 c IGT6D20 IGT6E20
Text: IGT6D20,E20 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 0 Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT6D20
vqe 24 d
vqe 24 e
VQE 23 E
vqe 23
vqe 14 E
VQE 21 d
vqe 23 f
vqe 23 c
IGT6E20
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IGT8D21
Abstract: IGT8E21
Text: csrifBAiMiiisro^ IGT8D21.E21 2CI AMPERES 400, 500 VOLTS EQUIV. FiDS ON = 0.145 i l Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT8D21
60Msec,
IGT8E21
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IGT6D21
Abstract: IGT6E21
Text: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high
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IGT6D21
-f--10%
IGT6E21
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K105 transistor
Abstract: transistor k105 IGT4E11 IGT4D11 IGT-4E11
Text: IGT4D11,E11 c s r 10 AMPERES 400, 500 VOLTS EQUIV. Rd S ON = 0.27 il Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT4D11
K105 transistor
transistor k105
IGT4E11
IGT-4E11
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IGT4E10
Abstract: 4D10 VQE 22 VQE 12 IGT4D10
Text: IGT4D10.E10 10 AMPERES 400,500 VOLTS EQUIV. Rd S ON =0.27 il Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power M O S F E T S and
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IGT4D10
IGT4E10
4D10
VQE 22
VQE 12
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6d20
Abstract: 6D-20 IGT8D20 250M BE20 IGT8E20 VQE 23 E
Text: IGT8D20,E20 1ST TIM S^M OIS 20 AMPERES 400,500 VOLTS EQUIV. Rd S ON = 0.12 O Insulated Gate Bipolar Transistor This IG T" Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and
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IGT8D20
6D20-
PULSEWIDTHa60
6d20
6D-20
250M
BE20
IGT8E20
VQE 23 E
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550MH
Abstract: IGT6D10 IGT6E10
Text: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device
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IGBT driver EXB841
Abstract: EXB841 EXB840
Text: GATE-DRIVE HYBRIDS FOR IGBTs DESCRIPTION: FEATURES: The insulated gate bipolar transistor IGBT is increasingly being used in low-noise, high-performance power supplies, inverters, uninterruptible power supplies (UPS), and motor speed controls. • Two series available:
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10kHz
40kHz
2500VAC
EXB850
EXB840
EXB851
EXB841
IGBT driver EXB841
EXB841
EXB840
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Untitled
Abstract: No abstract text available
Text: GATE-DRIVE HYBRIDS FOR IGBTs DESCRIPTION: FEATURES: The insulated gate bipolar transistor IGBT is increasingly being used in low-noise, high-performance power supplies, inverters, uninterruptible power supplies (UPS), and motor speed controls. • Fuji’s Hybrid 1C driver of IGBTs was
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40kHz
2500VAC
EXB850
EXB851
EXB840
EXB841
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EXB841
Abstract: IGBT driver EXB841 ups electrical symbols EXB840 ups circuit diagram using igbt IGBT gate driver welding EXB851 EXB850 welding machine diagram exb841 igbt driver
Text: GATE-DRIVE HYBRIDS FOR IGBTs DESCRIPTION: FEATURES: H ie insulated gate bipolar transistor IGBT is increasingly being used in low-noise, high-performance power supplies, inverters, uninterruptible power supplies (UPS), and motor speed controls. • Fuji’s Hybrid 1C driver of IGBTs was
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10kHz
40kHz
2500VAC
EXB850
EXB851
EXB851
EXB840
EXB841
IGBT driver EXB841
ups electrical symbols
ups circuit diagram using igbt
IGBT gate driver welding
welding machine diagram
exb841 igbt driver
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