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    POWER MOSFET P-CHANNEL 250V 50A Search Results

    POWER MOSFET P-CHANNEL 250V 50A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    POWER MOSFET P-CHANNEL 250V 50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    NTE2990

    Abstract: Power MOSFET P-Channel 250V 50A
    Text: NTE2990 MOSFET P−Channel, Enhancement Mode High Speed Switch Features: D Low Drain−Source On−Resistance D Low Input Capacitance D High Avalanche Capability Ratings Applications: D Switching Regulators D UPS D DC−DC Converters D General Purpose Power Amplifier


    Original     		PDF NTE2990 NTE2990 Power MOSFET P-Channel 250V 50A

    2SK3685-01

    Abstract: MJ205
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3685-01 500V/0.38Ω/19A 1) Package TO-247 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current


    Original     		PDF 2SK3685-01 00V/0 38/19A) O-247 MT5F12584 2SK3685-01 MJ205

    2SK3683

    Abstract: 2SK3683-01MR
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683-01MR 500V/0.38Ω/19A 1) Package TO-220F15R 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Ratings Units V DS 500 V Continuous Drain Current ID ±19 A Pulsed Drain Current


    Original     		PDF 2SK3683-01MR 00V/0 38/19A) O-220F15R MT5F12582 2SK3683 2SK3683-01MR

    2SK3682-01

    Abstract: No abstract text available
    Text: PRELIM INARY Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3682-01 500V/0.38Ω/19A 1) Package TO-220 2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified) Symbols Ratings Units V DS 500 V Continuous Drain Current ID ±19 A


    Original     		PDF 2SK3682-01 00V/0 38/19A) O-220 MT5F12580 2SK3682-01

    relay finder 45.61

    Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415
    Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

    2SK3884-01

    Abstract: 2SK3884 N-channel enhancement 200V 60A 2sk38
    Text: DATE DRAWN Sep.-16-'04 CHECKED Sep.-16-'04 CHECKED Sep.-16-'04 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		PDF 2SK3884-01 MS5F5911 H04-004-05 H04-004-03 2SK3884-01 2SK3884 N-channel enhancement 200V 60A 2sk38

    2sk4004

    Abstract: 2SK4004-01MR 2SK400 MS5F5983 2sk40 to-247 to-220
    Text: DATE DRAWN Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		PDF 2SK4004-01MR MS5F5983 H04-004-05 H04-004-03 2sk4004 2SK4004-01MR 2SK400 MS5F5983 2sk40 to-247 to-220

    59n25

    Abstract: No abstract text available
    Text: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		PDF FMW59N25G MS5F6281 H04-004-05 H04-004-03 59n25

    FMA18N25G

    Abstract: BV EI 302 3495 MOSFET Type Channel N Id 180A
    Text: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27-'05 CHECKED Oct.-27-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		PDF FMA18N25G MS5F06392 Octorber-27-2005 H04-004-05 Oct-27 MS5F06392 H04-004-03 FMA18N25G BV EI 302 3495 MOSFET Type Channel N Id 180A

    schematic diagram 230VAC to 24VDC POWER SUPPLY

    Abstract: 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P
    Text: farnell.com element14.com 2501 Relays & Solenoids Page 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . . High Frequency Relays . . . . . . . . . . . . . . . . . . . . . Interface Relays . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element14 schematic diagram 230VAC to 24VDC POWER SUPPLY 48V 30A SPDT RELAY IM03D PCH-124 N mosfet 250v 600A VARISTOR 275 L20 PA66 - GF 25 relay marking code W16 SMD Transistor 90W 19.5V Power Adapter pcb G6CU-2117P

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    IRFF420

    Abstract: No abstract text available
    Text: IRFF420 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x . (0 .0 3 5 )


    Original     		PDF IRFF420 00A/ms 300ms, IRFF420

    IRFF420

    Abstract: No abstract text available
    Text: IRFF420 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x . (0 .0 3 5 )


    Original     		PDF IRFF420 00A/ms 300ms, IRFF420

    Untitled

    Abstract: No abstract text available
    Text: SEME 2N6794 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x .


    Original     		PDF 2N6794 00A/ms 300ms,

    fmd04n50g

    Abstract: 534 SMD Marking Code smd diode 36A 2 LEADS
    Text: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27-'05 CHECKED Oct.-27-'05 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		PDF October-27 FMU04N50G FMD04N50G MS5F06360 H04-004-05 H04-004-03 fmd04n50g 534 SMD Marking Code smd diode 36A 2 LEADS

    MITSUBISHI CM400

    Abstract: MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h
    Text: MITSUBISHI SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES 4.0 Using IGBT Modules 4.1 Structure and Operation of IGBT Module Mitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM400 MITSUBISHI CM300 H BRIDGE inverters circuit diagram using igbt NPN/transistor NEC K 2500 HALF BRIDGE NPN DARLINGTON POWER MODULE ups circuit diagram using igbt IGBT h-series application note CM30 igbt CM400 MITSUBISHI cm50-24h

    Untitled

    Abstract: No abstract text available
    Text: IRFF420 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . BVDSS ID(cont) RDS(on) 0 .8 9 m a x . (0 .0 3 5 )


    Original     		PDF IRFF420 300ms, IRFF420" IRFF420 IRFF420-JQR-B 350pF

    MITSUBISHI CM300

    Abstract: MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 4.1 Structure and Operation of IGBT Module 4.0 Using IGBT Modules Powerex IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low


    Original     		PDF 20kHz MITSUBISHI CM300 MITSUBISHI CM400 cm1000ha-24h Igbt wafer cm15 300v CM400 CM600HU-24F Mitsubishi Electric IGBT MODULES CM600HA-24H cm300 igbt

    hp laptop MOTHERBOARD pcb CIRCUIT diagram

    Abstract: ips 500w circuit diagram 800w class d circuit diagram schematics IRS2092 audio amplifier circuit diagram 700w audio amplifier circuit diagram schematic diagram Electronic Ballast xenon 2000w audio amplifier circuit diagram 1000w class d circuit diagram schematics IR2153 spice model circuit diagram of smps 400w DESKTOP
    Text: Product Line Overview Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that enable customers to add energyconserving features that achieve lower operating energy costs and manufacturing Bill of Material


    Original     		PDF

    gs 7103

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS16VS-5 HIGH-SPEED SWITCHING USE FS16VS-5 OUTLINE DRAWING Dimensions in mm T a y: % 3/ Q2y ö ÍQ oi A2 £ X GATE DRAfN SOURCE DRAIN • V dss . 250V • rDS ON) (MAX)


    OCR Scan     		PDF FS16VS-5 O-220S gs 7103