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    POWER MOSFET, FAIRCHILD Search Results

    POWER MOSFET, FAIRCHILD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    POWER MOSFET, FAIRCHILD Price and Stock

    TE Connectivity TL1220R3BBBRG-POWER

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    TE Connectivity TL1220R1BBBG-POWER

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    TE Connectivity TL1220R2BBBOG-POWER

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    Thomas & Betts POWER-TOOL

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    • 1 $35792.4
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    TE Connectivity TL1220R2BBBRG-POWER

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    Find more POWER MOSFET, FAIRCHILD price and stock on Findchips.com

    POWER MOSFET, FAIRCHILD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6782

    Abstract: 2N67 TB334
    Text: [ /Title 2N67 82 /Subject (3.5A, 100V, 0.600 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Fairchild Corporation, NChannel Power MOSFET, TO205AF ) /Creator () /DOCI NFO pdfmark 2N6782 Data Sheet December 2001 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET


    Original     		PDF O205AF 2N6782 2N6782 2N67 TB334

    transistor irf510

    Abstract: irf510 IRF510 MOSFET IRF510 Power Mosfet transistor
    Text: IRF510 Data Sheet November 1999 5.6A, 100V, 0.540 Ohm, N-Channel Power MOSFET [ /Title IRF51 0 /Subject (5.6A, 100V, 0.540 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark


    Original     		PDF IRF510 IRF51 O220AB IRF510 transistor irf510 IRF510 MOSFET IRF510 Power Mosfet transistor

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		PDF IRF520 IRF52 O220AB IRF520 irf52 0

    BUZ11

    Abstract: buz11 application note BUZ1 TB334 TA9771
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB BUZ11 buz11 application note BUZ1 TB334 TA9771

    IRF820

    Abstract: irf-82
    Text: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()


    Original     		PDF IRF820 IRF82 O220AB IRF820 irf-82

    BUZ71 application

    Abstract: No abstract text available
    Text: BUZ71 Data Sheet [ /Title BUZ7 1 /Subject (14A, 50V, 0.100 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ71 O220AB TA9770. BUZ71 application

    BUZ72A

    Abstract: mosfet .5a 100v
    Text: BUZ72A Data Sheet [ /Title BUZ7 2A /Subject (9A, 100V, 0.250 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ72A O220AB TA17401. BUZ72A mosfet .5a 100v

    Untitled

    Abstract: No abstract text available
    Text: BUZ11 Data Sheet [ /Title BUZ1 1 /Subject (30A, 50V, 0.040 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFET, TO220AB ) /Creator () /DOCI NFO pdfmark June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features


    Original     		PDF BUZ11 O220AB

    sil 5102

    Abstract: IRFP150 TB334
    Text: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		PDF IRFP150 sil 5102 IRFP150 TB334

    IRFP150N

    Abstract: No abstract text available
    Text: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,


    Original     		PDF IRFP150N O-247 IRFP150N

    vcx 02 544

    Abstract: No abstract text available
    Text: FDC697P P-Channel 1.8V Specified Bottomless PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.


    Original     		PDF FDC697P vcx 02 544

    a7840

    Abstract: fdfs6n303
    Text: FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor’s FETKEY technology combines high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The MOSFET and


    Original     		PDF FDFS6N303 a7840 fdfs6n303

    Untitled

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management


    Original     		PDF FDMC8878

    Untitled

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8878

    Untitled

    Abstract: No abstract text available
    Text: FQPF9N50CF N-Channel QFET FRFET® MOSFET 500 V, 9 A, 850 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has


    Original     		PDF FQPF9N50CF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel QFET MOSFET 800V, 0.2 A, 20 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQT1N80TF OT-223n

    fqt1n60

    Abstract: FQT1N60C 1A 300V mosfet
    Text: N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQT1N60C FQT1N60C OT-223 fqt1n60 1A 300V mosfet

    Untitled

    Abstract: No abstract text available
    Text: N-Channel QFET MOSFET 60 V, 17.2 A, 42 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially


    Original     		PDF

    FLMP SuperSOT-6

    Abstract: FDC697P
    Text: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V


    Original     		PDF FDC697P FLMP SuperSOT-6 FDC697P

    FQPF*11n50cf

    Abstract: FQPF11N50CF FQPF11N50
    Text: FQP11N50CF / FQPF11N50CF N-Channel QFET FRFET® MOSFET 500 V, 11 A, 550 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQP11N50CF/FQPF11N50CF FQP11N50CF FQPF11N50CF FQPF*11n50cf FQPF11N50CF FQPF11N50

    FQPF10N50CF

    Abstract: fqpf10n50
    Text: FQP10N50CF / FQPF10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQP10N50CF FQPF10N50CF FQPF10N50CF fqpf10n50

    Untitled

    Abstract: No abstract text available
    Text: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management


    Original     		PDF FDMC8878

    Untitled

    Abstract: No abstract text available
    Text: FQP13N50CF / FQPF13N50CF N-Channel QFET FRFET® MOSFET 500 V, 13 A, 540 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET


    Original     		PDF FQP13N50CF FQPF13N50CF FQPF13N50CF

    Untitled

    Abstract: No abstract text available
    Text: FQA70N15 N-Channel QFET MOSFET 150 V, 70 A, 28 mΩ Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially


    Original     		PDF FQA70N15