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    PNP POWER TRANSISTOR TO220 Search Results

    PNP POWER TRANSISTOR TO220 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP POWER TRANSISTOR TO220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN EBC SOT-23

    Abstract: SOT-23 EBC NPN transistor ECB TO-92
    Text: Power Transistor & Small Signal Transistor Power Transistor & Small Signal Transistor MAXIMUM RATINGS NPN BVCEO BVCES IC PC PIN STYLE PNP BVCBO BVCES BVCEV V (V) (A) (W) 123 PJP110A PNP -20 -12 -10 75 BCE TO-220 PJP168A PNP -20 -13 -18 100 BCE TO-220 PJ13003


    Original     		PDF PJP110A O-220 PJP168A PJ13003 PJ13005 PJ13007 NPN EBC SOT-23 SOT-23 EBC NPN transistor ECB TO-92

    2SC1419

    Abstract: TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE350 Plastic Medium Power PNP Silicon Transistor 0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability.


    Original     		PDF MJE350 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2SC1419 TIP54 MJ1000 MJ15024 MJ15025 2SC1943 SE9302 MJE2482 2SD675 BU326 BU108

    2sB101

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. „ FEATURES * Low base drive


    Original     		PDF 2SB1017 2SB1017 2SB1017L-x-TF3-T 2SB1017G-x-TF3-T 2SB1017L-x-TF3-T O-220F QW-R219-010 2sB101

    Untitled

    Abstract: No abstract text available
    Text: TIP120 Series PNP/NPN Silicon Power Transistor P b Lead Pb -Free 1 FEATURES: * Medium Power Complementary silicon transistors 2 3 1. BASE 2. COLLECTOR 3. EMITTER * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TO-220


    Original     		PDF TIP120 TIP125 O-220 TIP120 TIP125 TIP121 TIP126 TIP122 TIP127

    BUS48AP

    Abstract: 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD166 Plastic Medium Power Silicon PNP Transistor 1.5 AMPERE POWER TRANSISTOR PNP SILICON 45 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD166 BD165 BD166 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BUS48AP 2SC1381 mje15033 replacement 2SA698 BD477 BD139.16 2N307 2SC1224 2SD549 BD139.10

    HIGH VOLTAGE PNP POWER TRANSISTOR

    Abstract: MJE5852 l5 transistor PNP
    Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching


    Original     		PDF MJE5852 MJE5852 O-220 HIGH VOLTAGE PNP POWER TRANSISTOR l5 transistor PNP

    MJE5852

    Abstract: No abstract text available
    Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: ■ SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching


    Original     		PDF MJE5852 MJE5852 O-220

    BU108

    Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD180 BD179 BD180 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B BU108 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631

    Untitled

    Abstract: No abstract text available
    Text: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector


    Original     		PDF BDW94/C BDW94/C BDW93 BDW93C O-220 BDW94 BDW94C

    MJE5852

    Abstract: No abstract text available
    Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR • ■ ■ STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ DESCRIPTION The MJE5852 is manufactured using High


    Original     		PDF MJE5852 MJE5852 O-220

    POWER TRANSISTOR TO-220

    Abstract: MJE9780 hFE is transistor to220 transistor TO-220 Outline Dimensions
    Text: MJE9780 PNP SILICON POWER TRANSISTOR 3.0 AMPS, 150 VOLTS JEDEC TO-220 CASE DESCRIPTION: The Central Semiconductor MJE9780 is a PNP power transistor packaged in a TO-220 case, designed for CRT output applications. MAXIMUM RATINGS TA=25°C unless otherwise noted


    Original     		PDF MJE9780 O-220 MJE9780 O-220 POWER TRANSISTOR TO-220 hFE is transistor to220 transistor TO-220 Outline Dimensions

    MJE5852

    Abstract: No abstract text available
    Text: MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY • ■ ■ APPLICATIONS: SWITCHING REGULATORS ■ MOTOR CONTROL ■ INVERTERS ■ 3 1 DESCRIPTION The MJE5852 is manufactured using High


    Original     		PDF MJE5852 MJE5852 O-220

    D45H2

    Abstract: pnp low saturation voltage fast switching transistor
    Text: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds


    Original     		PDF D45H2 D45H2 O-220 pnp low saturation voltage fast switching transistor

    D65H2

    Abstract: No abstract text available
    Text: UTC D65H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D65H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds


    Original     		PDF D65H2 D65H2 O-220 QW-R203-002

    SB2202

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD. SB2202 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  DESCRIPTION The UTC SB2202 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.


    Original     		PDF SB2202 SB2202 SB2202L-x-TM3-R SB2202G-x-TM3-R SB2202L-x-TN3-T SB2202G-x-TN3-T SB2202L-x-TN3-R SB2202G-x-TN3-R O-251 O-252

    Untitled

    Abstract: No abstract text available
    Text: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds


    Original     		PDF D45H2 D45H2 O-220 QW-R203-003

    D45H1

    Abstract: D45H10 D45H2 D45H4 D45H7
    Text: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds


    Original     		PDF D45H2 D45H2 O-220 QW-R203-003 D45H1 D45H10 D45H4 D45H7

    D45H2

    Abstract: No abstract text available
    Text: UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D45H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds


    Original     		PDF D45H2 D45H2 O-220 QW-R203-003

    D65H2

    Abstract: No abstract text available
    Text: UTC D65H2 PNP EXPITAXIAL SILICON TRANSISTOR PNP EXPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC D65H2 is a general purpose power application and switching. FEATURE 1 *Low Collector-Emitter Saturation Voltage VCE sat =-1v(MAX)@-15A *Fast Switching Speeds


    Original     		PDF D65H2 D65H2 O-220 QW-R203-002

    D1485

    Abstract: 2SA1720
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		PDF 2SA1720 2SA1720 O-220 D1485

    MJ4502 EQUIVALENT

    Abstract: BU108 BU806 Complement BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ4502 High-Power PNP Silicon Transistor 30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100–Watts music power per channel. • High DC Current Gain — hFE = 25 – 100 @ IC = 7.5 A


    Original     		PDF MJ4502 MJ802 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ4502 EQUIVALENT BU108 BU806 Complement BDX54 BU326 BU100

    2SA1742

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal


    Original     		PDF 2SA1742 2SA1742 O-220 O-220)

    2SB857

    Abstract: R217
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB857 PNP SILICON TRANSISTOR SILICON PNP TRANSISTOR „ DESCRIPTION Low frequency power amplifier. Lead-free: 2SB857L Halogen-free:2SB857G „ ORDERING INFORMATION Normal 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R Order Number


    Original     		PDF 2SB857 2SB857L 2SB857G 2SB857-x-T6C-K 2SB857-x-TA3-T 2SB857-x-TN3-R 2SB857L-x-T6C-K 2SB857L-x-TA3-T 2SB857L-x-TN3-R 2SB857G-x-T6C-K 2SB857 R217

    MJE1123

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MJE1123/D SEMICONDUCTOR TECHNICAL DATA M JE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low -dropout


    OCR Scan     		PDF MJE1123/D JE1123 MJE1123 21A-06 O-220AB