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    PNP EPITAXIAL SILICON TRANSISTOR 5A Search Results

    PNP EPITAXIAL SILICON TRANSISTOR 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PNP EPITAXIAL SILICON TRANSISTOR 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIP127 Application Note

    Abstract: tip127 TIP127L TIP127G UTC SILICON PNP 3A TRANSISTORS PNP POWER TRANSISTOR TO220
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. Lead-free: TIP127L Halogen-free: TIP127G


    Original     		PDF TIP127 TIP127 TIP127L TIP127G TIP127-TA3-T TIP127-T60-K TIP127L-TA3-T TIP127L-T60-K TIP127G-TA3-T TIP127G-T60-K TIP127 Application Note TIP127L TIP127G UTC SILICON PNP 3A TRANSISTORS PNP POWER TRANSISTOR TO220

    TIP127G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. Lead-free: TIP127L Halogen-free: TIP127G


    Original     		PDF TIP127 TIP127 TIP127L TIP127G TIP127-TA3-T TIP127-T60-K TIP127L-TA3-T TIP127L-T60-K TIP127G-TA3-T TIP127G-T60-K TIP127G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ


    Original     		PDF TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T TIP127L-TF3-T TIP127G-TF3-T O-126 O-220

    tip127

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. „ EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ


    Original     		PDF TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T O-126 O-220 QW-R203-005

    TIP127

    Abstract: TIP127 Application Note TIP127 equivalent tip127 TRANSISTOR equivalent TRANSISTOR 077
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. „ EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ


    Original     		PDF TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T O-126 O-220 QW-R203-005 TIP127 Application Note TIP127 equivalent tip127 TRANSISTOR equivalent TRANSISTOR 077

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications. „ EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ


    Original     		PDF TIP127 TIP127 TIP127L-T60-K TIP127G-T60-K TIP127L-TA3-T TIP127G-TA3-T TIP127L-TF3-T TIP127G-TF3-T O-126 O-220

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD TIP127 PNP SILICON TRANSISTOR PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC TIP127 is a PNP epitaxial transistor, designed for use in general purpose amplifier low-speed switching applications.  EQUIVALENT TEST R1 ≈8kΩ, R2 ≈0.12kΩ


    Original     		PDF TIP127 TIP127 TIP127L-TA3-T TIP127G-TA3-T O-220 TIP127L-TF3-T TIP127G-TF3-T O-220F TIP127L-T60-K TIP127G-T60-K

    Untitled

    Abstract: No abstract text available
    Text: BDW94/C PNP Epitaxial Silicon Transistor BDW94/C PNP Epitaxial Silicon Transistor Power Linear and Switching Application • Power Darlington TR • Complement to BDW93 and BDW93C Respectively 1 1.Base Absolute Maximum Ratings Symbol VCBO VCEO TO-220 2.Collector


    Original     		PDF BDW94/C BDW94/C BDW93 BDW93C O-220 BDW94 BDW94C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD STD888 Preliminary PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR  DESCRIPTION The UTC STD888 is a high current, high performance, low voltage PNP transistor; it uses UTC’s advanced technology to provide


    Original     		PDF STD888 STD888 STD888L-at QW-R209-028

    sop8901

    Abstract: No abstract text available
    Text: SOP8901 Ordering number : ENN8199 SOP8901 PNP Epitaxial Planar Silicon Transistor N-Channel Silicon MOSFET Motor Bridge Circuit Applications Features • Composite type with a PNP transistor and an N-ch Sillicon MOSFET contained in one package facilitating highdensity mounting.


    Original     		PDF OP8901 ENN8199 sop8901

    2SB817P

    Abstract: 2SD1047P
    Text: Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features unit : mm 2022A [2SB817P / 2SD1047P] 15.6


    Original     		PDF ENN6572 2SB817P 2SD1047P: 2SB817P 2SD1047P AF80W 2SD1047P] 2SD1047P

    2SD1842

    Abstract: 2SB1232 ITR09408 ITR09409 ITR09410
    Text: Ordering number:ENN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other


    Original     		PDF ENN3261A 2SB1232 2SD1842 2SB1232/2SD1842 00V/40A 2SB1232/2SD1842] 2SD1842 2SB1232 ITR09408 ITR09409 ITR09410

    TA-3317

    Abstract: 2SA2062 2SC5774 D1503 2SA20
    Text: 2SA2062 / 2SC5774 Ordering number : ENN6987A 2SA2062 / 2SC5774 Features • • • PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 10A, AF70W Output Applications Large current capacitance. Wide ASO and high durability against breakdown.


    Original     		PDF 2SA2062 2SC5774 ENN6987A AF70W 2SA2062 TA-3317 2SC5774 D1503 2SA20

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    Untitled

    Abstract: No abstract text available
    Text: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA


    Original     		PDF MJD210 500mA QW-R213-001

    2N6190

    Abstract: TO39 package PNP EPITAXIAL SILICON TRANSISTOR 5A
    Text: 2N6190 MECHANICAL DATA Dimensions in mm Inches PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • SILICON PLANAR EPITAXIAL PNP TRANSISTOR 12.70 (0.500) min. 0.89 max. (0.035) • HERMETICALLY SEALED TO-39


    Original     		PDF 2N6190 2N6190 O205AD) 100kHz TO39 package PNP EPITAXIAL SILICON TRANSISTOR 5A

    2SD1047C

    Abstract: 2sb817c 2SB817
    Text: 2SB817C / 2SD1047C Ordering number : ENA0188 2SB817C / 2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 140V / 12A, AF 80W Output Applications Features • • • Large current capacitance. Wide ASO and high durability against breakdown.


    Original     		PDF ENA0188 2SB817C 2SD1047C 2SB817C A0188-4/4 2SD1047C 2SB817

    2SB887

    Abstract: 2SD1197 ITR08623 ITR08624
    Text: 2SB887 / 2SD1197 Ordering number : EN1079B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Darlington Transistor NPN Triple Diffused Planar Silicon Darlington Transistor 2SB887 / 2SD1197 Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.


    Original     		PDF 2SB887 2SD1197 EN1079B 2SB887 2SD1197 ITR08623 ITR08624

    ic 2903 data

    Abstract: ENN6591 CPH3109 CPH5705 SBS004
    Text: Ordering number : ENN6591 CPH5705 TR : PNP Epitaxial Planar Silicon Transistor SBD : Sohottky Barrier Diode CPH5705 DC / DC Converter Applications Features unit : mm 2156 4 0.15 3 0.6 5 0.2 [CPH5705] 2.9 0.05 0.6 • Composite type with a PNP transistor and a Schottky


    Original     		PDF ENN6591 CPH5705 CPH5705] CPH5705 CPH3109 SBS004, ic 2903 data ENN6591 SBS004

    CPH3106

    Abstract: CPH5701 SBS004
    Text: Ordering number:ENN6319 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5701 DC/DC Converter Applications Package Dimensions unit:mm 2156 [CPH5701] 2.9 0.15 0.2 4 3 0.6 5 2.8 0.05 0.6 • Composite type with a PNP transistor and a Schottky


    Original     		PDF ENN6319 CPH5701 CPH5701] CPH5701 CPH3106 SBS004, SBS004

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN6007 PNP Silicon Epitaxial Planar Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features Package Dimensions • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating


    OCR Scan     		PDF EN6007 CPH6701 CPH670I CPH3106 CPH6701]

    marking PA

    Abstract: CPH3106 CPH6701 "marking PA"
    Text: Ordering number:ENN6007A PNP Epitaxial Planar Silicon Transistor Schottky Barrier Diode CPH6701 DC/DC Converter Applications Features • Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting.


    OCR Scan     		PDF ENN6007A CPH6701 CPH6701 CPH3106 SBS001, CPH6701] marking PA "marking PA"

    SGS125

    Abstract: s125 transistor
    Text: r Z J SGS-TUOMSON Hö i s [liLi©?^ iö©i SG S125 SILICON PNP POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . PNP DARLINGTON . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The SGS125 is a silicon epitaxial-base PNP


    OCR Scan     		PDF SGS125 150KS2 s125 transistor

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN3 7 2 0 2SB1388/2SD2093 2SB1388 : PNP Epitaxial Planar Silicon Transistor 2SD2093 : NPN Triple Diffused Planar Silicon Transistor 100V/10A Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.


    OCR Scan     		PDF 2SB1388/2SD2093 2SB1388 2SD2093 00V/10A T03PML c17D7b 3720-l/4