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    PHOTOTRANSISTOR NPN Search Results

    PHOTOTRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    PHOTOTRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared Phototransistor

    Abstract: "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C
    Text: QSE213C/QSE214C Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213C/QSE214C is a silicon phototransistor encapsulated in a medium angle, infrared transparent, clear thin plastic sidelooker package. NPN Silicon Phototransistor


    Original     		PDF QSE213C/QSE214C QSE213C/QSE214C QEE213 Infrared Phototransistor "infrared phototransistor" all datasheet phototransistor QEE213 QSE213C QSE214C

    MOC256

    Abstract: MOC256M
    Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256 is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		PDF MOC256-M MOC256 E90700 MOC256V-M) MOC256M

    Infrared Phototransistor

    Abstract: QEE213 QSE213 QSE214
    Text: QSE213/QSE214 Plastic Silicon Infrared Phototransistor Features Description • ■ ■ ■ ■ ■ The QSE213/QSE214 is a silicon phototransistor encapsulated in a medium angle, infrared transparent, black thin plastic sidelooker package. NPN Silicon Phototransistor


    Original     		PDF QSE213/QSE214 QSE213/QSE214 QEE213 Infrared Phototransistor QEE213 QSE213 QSE214

    mil 43

    Abstract: phototransistor datasheet MTLC0124
    Text: MTLC0124 Phototransistor Chips High Gain Phototransistor Device Structure Base Electrode 2.6mil X 2.6 mil 1. NPN Phototransistor 2. Planar Type Active Area 3. Electrodes: 3.1 N (Collector) : Gold Alloy 3.2 P (Base): Aluminum Alloy 3.3 N (Emitter): Aluminum alloy


    Original     		PDF MTLC0124 mil 43 phototransistor datasheet MTLC0124

    Untitled

    Abstract: No abstract text available
    Text: QSB363 / QSB363GR / QSB363YR / QSB363ZR Subminiature Plastic Silicon Infrared Phototransistor Features Description • • • • • • • • The QSB363 is a silicon phototransistor encapsulated in a black infrared transparent T-3/4 package. NPN Silicon Phototransistor


    Original     		PDF QSB363 QSB363GR QSB363YR QSB363ZR QEB363 QEB373 QSB363 QSB363GR

    MOC256-M

    Abstract: MOC256M
    Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		PDF MOC256-M MOC256-M E90700, MOC256V-M) MOC256M

    phototransistor datasheet

    Abstract: MTLC0140-9
    Text: MTLC0140-9 Data Sheet Phototransistor Chips High Gain Phototransistor Device Structure Base Electrode 1. NPN Phototransistor 2. Planar Type Active Area 3. Electrodes: 3.1 N Collector : Aluminum alloy (Front Side) Gold Alloy-(Back Side) 3.2 P (Base): Aluminum Alloy


    Original     		PDF MTLC0140-9 phototransistor datasheet MTLC0140-9

    high resolution phototransistor

    Abstract: phototransistor datasheet OPT6794 Phototransistor
    Text: Phototransistor OPT6794 DIMENSIONS Unit:mm 5.7 5.0 The OPT6794 is a high-sensitivity NPN silicon phototransistor mounted in a clear plastic package. With lensed package this small phototransistor is designed to optimize the mechanical resolution coupling efficiency, cost and reliability.


    Original     		PDF OPT6794 OPT6794 1000LUX 2000LUX high resolution phototransistor phototransistor datasheet Phototransistor

    MOC256M

    Abstract: No abstract text available
    Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		PDF MOC256-M MOC256-M E90700, MOC256V-M) MOC256M

    phototransistor 3 pin

    Abstract: Infrared emitter MOC256-M MOC256M
    Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		PDF MOC256-M MOC256-M E90700, MOC256V-M) phototransistor 3 pin Infrared emitter MOC256M

    PHOTOTRANSISTOR 3 PIN

    Abstract: Infrared emitter infrared emitters and detectors MOC256-M
    Text: AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOC256-M DESCRIPTION The MOC256-M is an AC input phototransistor optocoupler. The device consists of two infrared emitters connected in anti-parallel and coupled to a silicon NPN phototransistor detector.


    Original     		PDF MOC256-M MOC256-M E90700, MOC256V-M) PHOTOTRANSISTOR 3 PIN Infrared emitter infrared emitters and detectors

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT277 PACKAGE DIMENSIONS DESCRIPTION! The MCT277 ¡s a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT277 E50151 C1686 C1679 C1243

    Untitled

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT270 PACKAGE DIMENSIONS DESCRIPTIO N The MCT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor. WWW


    OCR Scan     		PDF MCT270 MCT270 E90700 ST1603A C1682 C1681 C1683 C1685 C1296A 74bfc

    Untitled

    Abstract: No abstract text available
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT270 PACKAGE DIMENSION! DESCRIPTION The M CT270 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT270 MCT270 2500VAC 3000VAC E50151 C2090 C1681 C1682 C1683 C1684

    Untitled

    Abstract: No abstract text available
    Text: OPTOELECTRONICS I PHOTOTRANSISTOR OPTOCOUPLER MCT271 DESCRIPTION PACKAGE DIMENSIONS db & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A 74bbfl51 C1294

    C1685 transistor

    Abstract: transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271
    Text: [ S PHOTOTRANSISTOR OPTOCOUPLER U OPTOELECTRONICS MCT271 DESCRIPTION PACKAGE DIMENSIONS & The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 ST1603A C2079 E90700 C1682 C1683 C1684 C1685 C1296A C1685 transistor transistor c1684 C1681 C2079 KJh transistor TRANSISTOR C1685 C1679 C1680 C1686 MCT271

    C1681

    Abstract: transistor c1684 c1685 NPN C1685 transistor t051
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLER MCT272 PACKAGE DIMENSION! The MCT272 is a phototransistor-type optically coupled Isolator. A gallium arsenide infrared emitting diode is selectively coupled with an NPN silicon phototransistor. r ~ 6.86 6.35


    OCR Scan     		PDF MCT272 MCT272 Ratio--75% time--10 E50151 C2090 C1683 C1684 C1294 C1681 transistor c1684 c1685 NPN C1685 transistor t051

    C1243

    Abstract: C2090
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOCOUPLERS MCT276 PACKAGE IENSIONS The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode Is selectively coupled with a high speed NPN silicon phototransistor. r~ 6.86


    OCR Scan     		PDF MCT276 MCT276 E5015CAL C1686 C1679 C1680 C1243 C1243 C2090

    TIL111

    Abstract: C1681
    Text: QUALITY TECHNOLOGIES PHOTOTRANSISTOR OPTOISOLATOR TIL111 DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		PDF TIL111 TIL111 E50151 C2079 C1686 C1679 C1680 C1681 C1682

    C1684

    Abstract: C1683 C1681 transistor c1684 C1684 transistor transistor c1682 C1296A
    Text: C sö PHOTOTRANSISTOR OPTOCOUPLER DPTDELECîHGNiCS 1 MCT271 PACKAGE DIMENSIONS DESCRIPTION The MCT271 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared em itting diode is selectively coupled with an NPN silicon phototransistor.


    OCR Scan     		PDF MCT271 MCT271 E90700 C1682 C1681 C1683 C1684 C1296A transistor c1684 C1684 transistor transistor c1682 C1296A

    Untitled

    Abstract: No abstract text available
    Text: su PHOTOTRANSISTOR OPTOISOLATOR OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		PDF TIL111 TIL111 E90700 ST1603A C2079 74bbfi C1684 C1683 C1685 C1294

    TIL111

    Abstract: No abstract text available
    Text: PHOTOTRANSISTOR OPTOISOLATOF OPTOELECTRONICS TIL111 PACKAGE DIMENSIONS DESCRIPTION The TIL111 is a phototransistor-type o ptically coupled isolator. An infrared em itting diode m anufactured from specially grow n gallium arsenide is selectively coupled with an NPN silicon phototransistor. The device is


    OCR Scan     		PDF TIL111 TIL111 ST1603A C2079 C1686 C1679 C1680 C1682 C1681

    WPTS-520D

    Abstract: uv phototransistor C 520D 520D c 5802 transistor
    Text: Photo Transistor Waitrony Module No.: WPTS-520D 1. General Description: The WPTS-520D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor


    OCR Scan     		PDF WPTS-520D WPTS-520D uv phototransistor C 520D 520D c 5802 transistor

    c 5802 transistor

    Abstract: IAO5 Waitrony IE-2 WPTS-510D Rise time of photo transistor
    Text: Photo Transistor Waitrony Module No.: WPTS-510D 1. General Description: The WPTS-510D is a high sensitivity NPN silicon phototransistor mounted in a 05mm black epoxy resin package. With daylight filter, this phototransistor is only sensitive to infrared rays. This phototransistor


    OCR Scan     		PDF WPTS-510D WPTS-510D c 5802 transistor IAO5 Waitrony IE-2 Rise time of photo transistor