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    PHOTO TRANSISTOR D12 Search Results

    PHOTO TRANSISTOR D12 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    PHOTO TRANSISTOR D12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4148 sod123

    Abstract: PIC16f627 example codes 1N4148,sod123 digital Amperemeter LED5MM power inverter circuit diagram schematics photo 1N4148_SOD-123 UV led diode generic red LED with an internal resistor B7 sod123
    Text: NCP5008DEMO/D Using the NCP5008 and NCP5009 Programmable LED Drivers Prepared by: Michael Bairanzade and Thierry Sutto ON Semiconductor Applications Engineering http://onsemi.com DEMONSTRATION NOTE Equipment List to Evaluate the Circuit • DC Lab power supply typical: 3.6 V/200 mA


    Original     		PDF NCP5008DEMO/D NCP5008 NCP5009 NCP5009. NCP5008/D, r14525 1N4148 sod123 PIC16f627 example codes 1N4148,sod123 digital Amperemeter LED5MM power inverter circuit diagram schematics photo 1N4148_SOD-123 UV led diode generic red LED with an internal resistor B7 sod123

    HIR26-21C

    Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
    Text: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight


    Original     		PDF CT1003Q43-V2 HIR26-21C w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor

    DARLINGTON TRANSISTOR ARRAY

    Abstract: No abstract text available
    Text: EVERLIGHT. THE SOURCE OF LIGHT. EVERLIGHT illuminates the way for many of the world’s brightest companies. Acclaimed as a premiere global solution provider in the opto-semiconductor industry and held in high regard as a reliable partner for many of the world’s leading electronics companies,


    Original     		PDF

    ccd 512 x 512

    Abstract: hamamatsu number of pixels 512 x 512
    Text: CCD area image sensors S7170-0909 S7171-0909 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well


    Original     		PDF S7170-0909 S7171-0909 S7170-0909, S7171-0909 S7171-0909, S7172-0909) SE-171 KMPD1028E08 ccd 512 x 512 hamamatsu number of pixels 512 x 512

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high near IR sensitivity The S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device


    Original     		PDF S9972/S9973 SE-171 KMPD1092E05

    scsi cable to usb adapter circuit

    Abstract: transistor mark d13 linear ccd radiation 1007n kl SN 102 lcd S9972-1007 S9972-1008 S9973-1007 CCD chip
    Text: IMAGE SENSOR CCD area image sensor S9972/S9973 series Front-illuminated FFT-CCD, high near IR sensitivity The S9972/S9973 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. By using the binning operation, the S9972/S9973 series can be used as a linear image sensor having a long aperture in the direction of the device


    Original     		PDF S9972/S9973 SE-171 KMPD1092E04 scsi cable to usb adapter circuit transistor mark d13 linear ccd radiation 1007n kl SN 102 lcd S9972-1007 S9972-1008 S9973-1007 CCD chip

    SCR based induction furnace circuit diagram

    Abstract: sprague 11z12 two way solenoid valve schematic diagram circuit schematic diagram induction heater SCR induction furnace circuit diagram triac applications circuit diagram CA3059 equivalent dc 220v motor speed control circuit with scr automatic change over switch circuit diagram three phase scr control induction heater circuit
    Text: Harris Semiconductor No. AN6182.1 Harris Intelligent Power April 1994 FEATURES AND APPLICATIONS OF INTEGRATED CIRCUIT ZERO-VOLTAGE SWITCHES CA3059 AND CA3079 Authors: A.C.N. Sheng, G.J. Granieri, J. Yellin, and T. McNulty CA3059 and CA3079 zero-voltage switches are monolithic


    Original     		PDF AN6182 CA3059 CA3079) CA3079 400Hz. SCR based induction furnace circuit diagram sprague 11z12 two way solenoid valve schematic diagram circuit schematic diagram induction heater SCR induction furnace circuit diagram triac applications circuit diagram CA3059 equivalent dc 220v motor speed control circuit with scr automatic change over switch circuit diagram three phase scr control induction heater circuit

    11Z12

    Abstract: sprague 11z12 CA3059 CA3059 equivalent SCHEMATIC 5kw power supply 30A triac scr ntc three phase heater control schematic triac base four step touch dimmer three phase ntc triac heater control triac diac applications circuit diagram schematic diagram induction heater
    Text: Semiconductor No. AN6182.1 Harris Intelligent Power April 1994 FEATURES AND APPLICATIONS OF INTEGRATED CIRCUIT ZERO-VOLTAGE SWITCHES CA3059 AND CA3079 Authors: A.C.N. Sheng, G.J. Granieri, J. Yellin, and T. McNulty CA3059 and CA3079 zero-voltage switches are monolithic


    Original     		PDF AN6182 CA3059 CA3079) CA3079 400Hz. 11Z12 sprague 11z12 CA3059 equivalent SCHEMATIC 5kw power supply 30A triac scr ntc three phase heater control schematic triac base four step touch dimmer three phase ntc triac heater control triac diac applications circuit diagram schematic diagram induction heater

    c 1006 TRANSISTOR

    Abstract: TRANSISTOR 100-6
    Text: IMAGE SENSOR CCD area image sensor S9970/S9971 series Low dark signal • low readout noise/front-illuminated FFT-CCD The S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. The


    Original     		PDF S9970/S9971 S7010/S7011 SE-171 KMPD1089E08 c 1006 TRANSISTOR TRANSISTOR 100-6

    ccd telescope

    Abstract: ccd for telescope image sensor x-ray ccd 512 x 512
    Text: CCD area image sensor S10747-0909 Enhanced near-infrared sensitivity by using fully-depleted CCD technology The S10747-0909 is a back-illuminated CCD area image sensor that has significantly improved near-infrared sensitivity and soft X-ray detection efficiency. This has been achieved by using a thick silicon substrate that allows the depletion layer to be thickened


    Original     		PDF S10747-0909 S10747-0909 SE-171 KMPD1117E02 ccd telescope ccd for telescope image sensor x-ray ccd 512 x 512

    Untitled

    Abstract: No abstract text available
    Text: CCD area image sensor S10747-0909 Enhanced near-infrared sensitivity by using fully-depleted CCD technology The S10747-0909 is a back-illuminated CCD area image sensor that has significantly improved near-infrared sensitivity and soft X-ray detection efficiency. This has been achieved by using a thick silicon substrate that allows the depletion layer to be thickened


    Original     		PDF S10747-0909 S10747-0909 SE-171 KMPD1117E01

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S9970/S9971 series Low dark signal • low readout noise/front-illuminated FFT-CCD The S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. The


    Original     		PDF S9970/S9971 S7010/S7011 SE-171 KMPD1089E07

    k 1006

    Abstract: 254 nm uv LED S9970-0906 S9970-1006 S9970-1007 CCD Linear Image Sensor S7011
    Text: IMAGE SENSOR CCD area image sensor S9970/S9971 series Low dark signal • low readout noise/front-illuminated FFT-CCD The S9970/S9971 series are families of FFT-CCD image sensors specifically designed for low-light-level detection in scientific applications. The


    Original     		PDF S9970/S9971 S7010/S7011 SE-171 KMPD1089E07 k 1006 254 nm uv LED S9970-0906 S9970-1006 S9970-1007 CCD Linear Image Sensor S7011

    s7172

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide


    Original     		PDF S7170-0909, S7171-0909 S7171-0909 S7171-0909, S7172-0909) SE-171 KMPD1028E06 s7172

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide


    Original     		PDF S7170-0909, S7171-0909 S7171-0909 S7171-0909, S7172-0909) SE-171 KMPD1028E04

    S7170-0909

    Abstract: S7171-0909
    Text: IMAGE SENSOR CCD area image sensor S7170-0909, S7171-0909 512 x 512 pixels, Back-thinned FFT-CCD Hamamatsu developed Multi Pin-Phase MPP mode back-thinned FFT- CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well as having low dark current and wide


    Original     		PDF S7170-0909, S7171-0909 S7171-0909 S7171-0909, S7172-0909) SE-171 KMPD1028E05 S7170-0909

    C7181

    Abstract: S7170-0909N
    Text: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909-01 have sensitivity from the UV to


    Original     		PDF S7170-0909 S7171-0909-01 S7170-0909, S7171-0909-01 S7171-0909-01, S7172-0909) SE-171 KMPD1028E09 C7181 S7170-0909N

    ccd 512 x 512

    Abstract: No abstract text available
    Text: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 speci¿cally designed for low-light-level detection in scienti¿c applications. The S7170-0909, S7171-0909-01 have sensitivity from the


    Original     		PDF S7170-0909 S7171-0909-01 S7170-0909, S7171-0909-01 S7171-0909-01, S7172-0909) SE-171 KMPD1028E10 ccd 512 x 512

    Untitled

    Abstract: No abstract text available
    Text: CCD area image sensor S10747-0909 Enhanced near-infrared sensitivity by using fully-depleted CCD technology The S10747-0909 is a back-illuminated CCD area image sensor that has significantly improved near-infrared sensitivity and soft X-ray detection efficiency. This has been achieved by using a thick silicon substrate that allows the depletion layer to be


    Original     		PDF S10747-0909 S10747-0909 KMPD1117E03

    ccd sensor

    Abstract: bd-8e MARK 8E diode S8665-0909 ccd image area sensor 120 frame rate 25 MHZ
    Text: IMAGE SENSOR CCD area image sensor S8665-0909 Four-stage thermoelectric cooled, back-thinned FFT-CCD S8665-0909 is an FFT-CCD area image sensor featuring low noise and low dark current MPP mode operation . The output charge can be integrated for long periods of time even at low light levels, allowing a wide dynamic range.


    Original     		PDF S8665-0909 S8665-0909 SE-171 KMPD1059E03 ccd sensor bd-8e MARK 8E diode ccd image area sensor 120 frame rate 25 MHZ

    ccd image area sensor 120 frame rate

    Abstract: ccd image area sensor 120 frame rate 25 MHZ S8665-0909
    Text: IMAGE SENSOR CCD area image sensor S8665-0909 Four-stage thermoelectric cooled, back-thinned FFT-CCD S8665-0909 is an FFT-CCD area image sensor featuring low noise and low dark current MPP mode operation . The output charge can be integrated for long periods of time even at low light levels, allowing a wide dynamic range.


    Original     		PDF S8665-0909 S8665-0909 SE-171 KMPD1059E02 ccd image area sensor 120 frame rate ccd image area sensor 120 frame rate 25 MHZ

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and


    Original     		PDF S8844-0909 S8844-0909 SE-171 KMPD1056E01

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and


    Original     		PDF S8844-0909 S8844-0909 SE-171 KMPD1056E02

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED a PHOTO-TRANSISTOR TLP628,-2,-4 TLP628 Unit in mm PROGRAMMABLE CONTROLLERS. DC-OUTPUT MODULE. TELECOMMUNICATION. 4 The TOSHIBA TLP628, -2, and -4 consists of a gallium arsenide infreared emitting diode optically coupled to a phototransistor which has a 350V high voltage of collector-emitter breakdown


    OCR Scan     		PDF TLP628 TLP628) TLP628, TLP628-4 5000Vrms UL1577, E67349 TLP628-4