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    P011C Search Results

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    P011C Price and Stock

    C&K HBS2KGB4SP011C

    SWITCH SNAP ACTION SPDT 20A 125V
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    DigiKey HBS2KGB4SP011C Bulk 76 1
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    Mouser Electronics HBS2KGB4SP011C
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    Newark HBS2KGB4SP011C Bulk 1
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    Bristol Electronics HBS2KGB4SP011C 50 1
    • 1 $10.5
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    C&K HBS2KCB4SP011C

    SWITCH SNAP ACTION SPDT 20A 125V
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    DigiKey HBS2KCB4SP011C Bulk 35 1
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    Mouser Electronics HBS2KCB4SP011C
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    Bel Fuse P01-1CA1-01

    1X1 GIG TAB UP LP W/ LED
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    DigiKey P01-1CA1-01 Tray 1,200
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    Bel Fuse P01-1CC0-01

    1X1 TAB DOWN 1G WITH LED
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    DigiKey P01-1CC0-01 Tray 1,200
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    Bel Fuse P01-1CB0-01

    1X1,GIG,NON_POE,-40~85C,TAB UP,S
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    DigiKey P01-1CB0-01 Tray 1,400
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    P011C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LD1117

    Abstract: LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33
    Text: LD1117 series Low drop fixed and adjustable positive voltage regulators Feature summary • Low dropout voltage 1V TYP. ■ 2.85V Device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2V, 1.8V, 2.5V,


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    PDF LD1117 O-220 OT-223 800mA LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33

    STP9NC65

    Abstract: STP9NC65FP
    Text: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    PDF STP9NC65 STP9NC65FP O-220/TO-220FP O-220 O-220FP STP9NC65 STP9NC65FP

    P11NM60AFP

    Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
    Text: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω


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    PDF STP11NM60A STP11NM60AFP STB11NM60A-1 O-220/TO-220FP/I2PAK STP11NM60AFP O-220 P11NM60AFP B11NM60A P11NM60A STP11NM60A p11nm60 STB11NM60A-1

    STGD3NB60S

    Abstract: STGP3NB60S SMD H2 T4
    Text: STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT TYPE STGP3NB60S STGD3NB60S • ■ ■ ■ VCES VCE sat IC 600 V 600 V < 1.5 V < 1.5 V 3A 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT


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    PDF STGP3NB60S STGD3NB60S O-220 O-220 STGD3NB60S STGP3NB60S SMD H2 T4

    D5NM60

    Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
    Text: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw


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    PDF STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 O-220/TO-220FP/DPAK/IPAK STP8NM60 STD5NM60 O-220 D5NM60 p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60

    STP16NE06L

    Abstract: STP16NE06LFP
    Text: STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V DSS R DS on ID STP16NE06L STP16NE06LFP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF STP16NE06L STP16NE06L/FP STP16NE06LFP 175oC STP16NE06L STP16NE06LFP

    PB137

    Abstract: pb137acv
    Text: PB137 POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER • ■ ■ ■ ■ REVERSE LEAKAGE CURRENT LESS THAN 10 µA THREE TERMINAL FIXED VERSION 13.7V OUTPUT CURRENT IN EXCESS OF 1.5A AVAILABLE IN ± 1% (AC) SELECTION AT 25°C TYPICAL DROPOUT VOLTAGE 2V TEMPERATURE RANGE 0°C TO 150°C


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    PDF PB137 PB137 O-220 pb137acv

    STP7NB80FP

    Abstract: STP7NB80
    Text: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB80 STP7NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.5 Ω < 1.5 Ω 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP7NB80 STP7NB80FP O-220/TO-220FP STP7NB80FP STP7NB80

    STGP12NB60H

    Abstract: No abstract text available
    Text: STGP12NB60H N-CHANNEL 12A - 600V − TO-220 PowerMESH IGBT TYPE STGP12NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 12 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY


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    PDF STGP12NB60H O-220 50kHz STGP12NB60H

    STP4NA40FI

    Abstract: STP4NA40
    Text: STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <2Ω <2Ω 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED


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    PDF STP4NA40 STP4NA40FI 100oC O-220 ISOWATT220 STP4NA40FI STP4NA40

    STP11NB40FP

    Abstract: STP11NB40
    Text: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID STP11NB40 STP11NB40FP 400 V 400 V < 0.55 Ω < 0.55 Ω 10.7 A 6.0 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY


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    PDF STP11NB40 STP11NB40FP O-220/TO-220FP STP11NB40FP STP11NB40

    STP38N06

    Abstract: n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02
    Text: STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF STP38N06 100oC 175oC O-220 STP38N06 n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02

    STP19N06L

    Abstract: STP19N06LFI
    Text: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY


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    PDF STP19N06L STP19N06LFI 100oC O-220 ISOWATT220 STP19N06L STP19N06LFI

    STGP20NB60K

    Abstract: No abstract text available
    Text: STGP20NB60K N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT PRELIMINARY DATA TYPE STGP20NB60K • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat ) LOW ON-LOSSES LOW GATE CHARGE


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    PDF STGP20NB60K O-220 STGP20NB60K

    DSA00105971

    Abstract: STP3NC50
    Text: STP3NC50 N-CHANNEL 500V - 3Ω - 2.8A TO-220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP3NC50 500 V <4Ω 2.8 A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


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    PDF STP3NC50 O-220 DSA00105971 STP3NC50

    4NC60

    Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
    Text: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


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    PDF STP4NC60 STP4NC60FP STB4NC60-1 O-220/TO-220FP/I2PAK STP4NC60 O-220 O-220FP O-220) 4NC60 STB4NC60-1 STP4NC60FP

    IRF634

    Abstract: IRF634FP
    Text: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3


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    PDF IRF634 IRF634FP O-220/TO-220FP O-220 O-220FP IRF634 IRF634FP

    STP14NF10FP

    Abstract: STB14NF10 STP14NF10
    Text: STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB14NF10 STP14NF10 STP14NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.13 Ω <0.13 Ω <0.13 Ω 15 A


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    PDF STB14NF10 STP14NF10 STP14NF10FP O-220/TO-220FP/D2PAK STP14NF10 O-263) O-263 O-220FP STP14NF10FP STB14NF10

    STB4NC60A-1

    Abstract: STP4NC60A STP4NC60AFP
    Text: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω


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    PDF STP4NC60A STP4NC60AFP STB4NC60A-1 O-220/TO-220FP/I2PAK STP4NC60A O-220 O-220FP O-220) STB4NC60A-1 STP4NC60AFP

    STP6NB80

    Abstract: STP6NB80FP
    Text: STP6NB80 STP6NB80FP N-CHANNEL 800V - 1.6Ω - 5.7A TO-220/TO-220FP PowerMesh MOSFET TYPE • ■ ■ ■ VDSS RDS on ID STP6NB80 800 V < 1.9 Ω 5.7 A STP6NB80FP 800 V < 1.9 Ω 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


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    PDF STP6NB80 STP6NB80FP O-220/TO-220FP STP6NB80 STP6NB80FP

    W 20NM60

    Abstract: 20nm60 STB20NM60-1 STP20NM60 STB20NM60 STP20NM60FP diode k 0368
    Text: STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 • ■ ■ ■ ■ VDSS RDS on 600 600 600 600 < < < < V V V V 0.29 0.29 0.29 0.29 Ω


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    PDF STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 O-220/FP/D2PAK/I2PAK STP20NM60 STB20NM60 W 20NM60 20nm60 STB20NM60-1 STP20NM60FP diode k 0368

    stp6nc60fp

    Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
    Text: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY


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    PDF STP6NC60 STP6NC60FP STB6NC60-1 O-220/TO-220FP/I2PAK 6NC60 O-220 O-220FP stp6nc60fp stp6nc60fp equivalent STB6NC60-1

    LD1117-18

    Abstract: ld1117c LD1117 LD1117XX12 LD1117XX18 LD1117XX18C LD1117XX25 LD1117XX25C LD1117XX28 LD1117XX30
    Text: LD1117xx Low drop fixed and adjustable positive voltage regulators Features • Low dropout voltage 1 V typ. ■ 2.85 V device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2 V, 1.8 V, 2.5 V,


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    PDF LD1117xx O-220 OT-223 LD1117 LD1117-18 ld1117c LD1117XX12 LD1117XX18 LD1117XX18C LD1117XX25 LD1117XX25C LD1117XX28 LD1117XX30

    L4940

    Abstract: L4940D2T10-TR L4940D2T12-TR L4940D2T5-TR L4940V5 L4940V85 L4940XX10 L4940XX12 L4940XX5 L4940XX85
    Text: L4940XX5, L4940XX85 L4940XX10, L4940XX12 Very low drop 1.5 A regulator Features • Precise 5, 8.5, 10, 12 V outputs ■ Low dropout voltage 450 mV typ. at 1 A ■ Very low quiescent current ■ Thermal shutdown ■ Short circuit protection ■ Reverse polarity protection


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    PDF L4940XX5, L4940XX85 L4940XX10, L4940XX12 O-220 L4940 O-220, O-220FP L4940D2T10-TR L4940D2T12-TR L4940D2T5-TR L4940V5 L4940V85 L4940XX10 L4940XX12 L4940XX5 L4940XX85