2N06L35
Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPD26N06S2L-35
PG-TO252-3-11
2N06L35
726-IPD26N06S2L-35
2N06L35
2N06L
v5856
GS6010
PCB REV 3.5
IPD26N06S2L-35
2N06L3
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2n0404
Abstract: No abstract text available
Text: IPB80N04S2-04 IPP80N04S2-04, IPI80N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB80N04S2-04
IPP80N04S2-04,
IPI80N04S2-04
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
IPP80N04S2-04
PG-TO263-3-2
2n0404
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4N06L30
Abstract: IPD25N06S4L-30 4N06L
Text: IPD25N06S4L-30 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 30 mΩ ID 25 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)
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IPD25N06S4L-30
PG-TO252-3-11
PG-TO252-3-11
4N06L30
726-IPD25N06S4L-30
4N06L30
IPD25N06S4L-30
4N06L
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2N03L05
Abstract: 154W SPB80N03S2L-05 SPP80N03S2L-05
Text: SPP80N03S2L-05 SPB80N03S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 30 V RDS on 5 mΩ ID 80 A P-TO263-3-2 • Low on-resistance RDS(on) P-TO220-3-1 • Excellent Gate Charge x RDS(on) product (FOM)
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SPP80N03S2L-05
SPB80N03S2L-05
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67042-S4033
2N03L05
P-TO263-3-2
2N03L05
154W
SPB80N03S2L-05
SPP80N03S2L-05
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Untitled
Abstract: No abstract text available
Text: Product specification BSS215P OptiMOS P2 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Super Logic Level (2.5V rated) -20 V V GS=-4.5 V 150 mΩ V GS=-2.5 V 280 ID -1.5 A • Avalanche rated PG-SOT23
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BSS215P
PG-SOT23
IEC61249-2-21
H6327:
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Untitled
Abstract: No abstract text available
Text: Product specification BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101
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BSS806N
PG-SOT23
IEC61249-2-21
H6327:
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H6327
Abstract: No abstract text available
Text: Product specification BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101
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BSS316N
PG-SOT23
IEC61249-2-21
H6327:
H6327
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BSO200N03S
Abstract: JESD22 Q67042-S4212 200N3
Text: BSO200N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC V DS 30 V R DS on ,max 20 mΩ ID 8.8 A 1 • Qualified according to JEDEC for target applications • N-channel
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BSO200N03S
Q67042-S4212
200N3S
BSO200N03S
JESD22
Q67042-S4212
200N3
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13n03la
Abstract: 13n03l 13N03 Q67042-S4160 S4160 equivalent IPD13N03LA s4160 SMD MARKING CODE transistor IPU13N03LA JESD22
Text: IPD13N03LA IPU13N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13 mΩ ID 30 A • N-channel • Logic level
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IPD13N03LA
IPU13N03LA
P-TO252-3-11
P-TO251-3-21
Q67042-S4159
13N03LA
13n03la
13n03l
13N03
Q67042-S4160
S4160 equivalent
IPD13N03LA
s4160
SMD MARKING CODE transistor
IPU13N03LA
JESD22
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P-TO252
Abstract: 04N03 04N03LA IPF04N03LA P-TO252-3-11
Text: IPF04N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max 4.1 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
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IPF04N03LA
P-TO252-3-23
P-TO252-3-11
Q67042-S4197
04N03LA
P-TO252
04N03
04N03LA
IPF04N03LA
P-TO252-3-11
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07n03l
Abstract: smd DIODE code marking 20A DIODE 07n03l 07N03 transistor 07N03L IPB07N03L IPP07N03L IPB07N03L SMD smd code diode 20a 246 smd code
Text: IPP07N03L IPB07N03L Preliminary data OptiMOS =Buck converter series Product Summary Feature N-Channel Logic Level Low on-resistance RDS on Excellent Gate Charge x RDS(on) product (FOM) VDS 30 RDS(on) max. SMD version 5.9 m ID 80 A P-TO263-3-2
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IPP07N03L
IPB07N03L
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67042-S4051
07N03L
P-TO263-3-2
07n03l
smd DIODE code marking 20A
DIODE 07n03l
07N03
transistor 07N03L
IPB07N03L
IPP07N03L
IPB07N03L SMD
smd code diode 20a
246 smd code
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IEC612
Abstract: 058N03M IEC61249-2-21 JESD22
Text: BSZ058N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features • Optimized for 5V driver application Notebook, VGA, POL V DS R DS(on),max • Low FOMSW for High Frequency SMPS • 100% avalanche tested 30 V V GS=10 V 5 mΩ V GS=4.5 V 6.4 ID
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BSZ058N03MS
IEC61249-2-21
058N03M
IEC612
058N03M
IEC61249-2-21
JESD22
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SMD DIODE 615 200A
Abstract: 2N0303 SPB80N03S2-03 SPP80N03S2-03
Text: SPP80N03S2-03 SPB80N03S2-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated VDS 30 RDS on max. SMD version 3.1 m ID 80 A P-TO263-3-2 Type
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SPP80N03S2-03
SPB80N03S2-03
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4247
2N0303
P-TO263-3-2
SMD DIODE 615 200A
2N0303
SPB80N03S2-03
SPP80N03S2-03
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BSO301SN
Abstract: 301SN
Text: BSO301SN Preliminary data OptiMOS =Small-Signal-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS on product (FOM) VDS 30 V RDS(on) 7.8 m ID 13 A Superior thermal resistance 150°C operating temperature
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BSO301SN
Q67040-S4345
301SN
BSO301SN
301SN
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64CN10N
Abstract: JESD22
Text: IPD64CN10N G IPU64CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 64 mΩ ID 17 A • Very low on-resistance R DS(on) • 175 °C operating temperature
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IPD64CN10N
IPU64CN10N
PG-TO252-3
PG-TO251-3
64CN10N
64CN10N
JESD22
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065N06L
Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
Text: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated
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IPB065N06L
IPP065N06L
IPB063N06L
PG-TO263-3-2
P-TO263-3-2
PG-TO220-3-1
063N06L
IPP063N06L
065N06L
PG-TO263-3-2
th58
D53A
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05N03LA
Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID
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IPD05N03LA
IPS05N03LA
IPF05N03LA
IPU05N03LA
IPD05N03LA
IPF05N03LA
IPS05N03LA
IPU05N03LA
P-TO252-3-11
05N03LA
05n03
fet to251
marking CODE R SMD DIODE
P-TO252-3-11
05N03L
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PN04L03
Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Text: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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IPB100N04S2L-03
IPP100N04S2L-03
PG-TO263-3-2
PG-TO220-3-1
SP0002-19065
PN04L03
PN04L03
smd diode code gs
Application Note ANPS071E
ANPS071E
marking CODE R SMD DIODE
smd diode marking 77
SMD MARKING CODE
SMD MARKING CODE 102
smd TR marking code G11
TRANSISTOR SMD MARKING CODE 42
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20n025s
Abstract: BSC020N025S JESD22
Text: BSC020N025S G OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • N-channel V DS 25 V R DS on ,max 2.0 mΩ ID 100 A • Logic level • Qualified according to JEDEC1 for target applications • Excellent gate charge x R DS(on) product (FOM)
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BSC020N025S
BSC020N025S
20N025S
20n025s
JESD22
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42n03s
Abstract: 42n03 BSC042N03S JESD22
Text: BSC042N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 4.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel
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BSC042N03S
Q67042-S4220
42N03S
42n03s
42n03
BSC042N03S
JESD22
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BSO4822
Abstract: No abstract text available
Text: BSO4822 Preliminary data OptiMOS =Small-Signal-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS on product (FOM) 150°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications
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BSO4822
Q67042-S4095
BSO4822
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32n03
Abstract: 32N03S BSC032N03S JESD22
Text: BSC032N03S OptiMOS 2 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters V DS 30 V R DS on ,max 3.2 mΩ ID 50 A 1 • Qualified according to JEDEC for target applications • N-channel
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BSC032N03S
Q67042-S4219
32N03S
32n03
32N03S
BSC032N03S
JESD22
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S 170 MOSFET TRANSISTOR
Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and
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B152-H8203-G4-X-7600
S 170 MOSFET TRANSISTOR
8203 dual mosfet
S 170 MOSFET
SOT323 MOSFET P
MOSFET SWITCHING FREQUENCY
IPS09N03LA
P-channel power mosfet SO-8
TDA21102
mosfet
all mosfet equivalent book
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120N06N
Abstract: 120N06 IPB120N06N PG-TO220-3 ISS 99 diode ipp120n06ng
Text: IPB120N06N G OptiMOS Power-Transistor IPP120N06N G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - normal level R DS on ,max 60 11.7 SMDversion ID 75 V mΩ A • 175 °C operating temperature
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IPB120N06N
IPP120N06N
P-TO220-3-1
P-TO263-3-2
120N06N
120N06N
120N06
PG-TO220-3
ISS 99 diode
ipp120n06ng
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