TRANSISTOR SMD MARKING CODE A1 4pin
Abstract: No abstract text available
Text: KT1610 Series 4PIN LSOP PHOTOTRANSISTOR PHOTOCOUPLER cosmo Description Schematic 4 1 The KT1600 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a 3 2 phototransistor detector. They are packaged in a 4 pin
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KT1610
KT1600
5000Vrms
69P10003
TRANSISTOR SMD MARKING CODE A1 4pin
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Untitled
Abstract: No abstract text available
Text: アキシャルダイオード Rectifier Diode Axial Diode •外観図 OUTLINE Unit : mm Weight : 1.06g （typ.） Package：AX14 600V 3.5A ① 特長 26.5 • 耐湿性に優れ高信頼性 • 高耐圧 Feature 26.5 7 ＋① ＊ 捺印面展開図 Marking
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S3V60
S3V20
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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SHINDENGEN DIODE
Abstract: 6SB60
Text: 7 'U r W i - K 7O S Bridge Diode S in g le I n - lin e P a cka g e OUTLINE DIMENSIONS U6SB 600V 6A « m • « æ s ip •U L K B J U L File No.E 14 2 4 2 2 • S iR E E , • S I F-SM g ftH R iffE i m a •S F IW Ü • * s . OA. ssœ •a s . mm. f a • Æ të H
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6SB20
6SB60
SHINDENGEN DIODE
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MURATA LQ
Abstract: 3V to 30V dc dc converter 3V to 5V dc dc converter AX1610
Text: Final Electrical Specifications LT1610 TECHNOLOGY l .7MHz, Single Cell Micropower DC/DC Converter u f m July 1998 FCRTURCS DCSCRIPTIOn • Uses Tiny Capacitors and Inductor ■ Internally Compensated ■ Low Quiescent Current: 30pA ■ Operates with V im as Low as 1V
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LT1610
200mA
300mV
300mA
250mA
V/600mA
500mV
300mA
MURATA LQ
3V to 30V dc dc converter
3V to 5V dc dc converter
AX1610
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Untitled
Abstract: No abstract text available
Text: advanced P ow er Tec h n o lo g y APT2X100D100J 1000V 100A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES ! PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Freewheeling Diode
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APT2X100D100J
OT-227
OT-227
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3un6
Abstract: No abstract text available
Text: 'O I 1 Advanced Technical Information wvv.wkvi'w^v.sv.v.viv.v.viv.v.viv.v.viv.v.v. IXGH 30N60BD1 IXGT 30N60BD1 IGBT with Diode V CES = 600 V = 60 A = 1.8 V = 100 ns ^C25 V CE sat
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30N60BD1
30N60BD1
O-268
freq00
3un6
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Untitled
Abstract: No abstract text available
Text: G S-TH0nS0N s D7E D T54LS85 T74LS85 71S1E37 D O lS Ilt 3 I OW POWER SCHOTTKY i INTEGRATED CIRCUITS 67C 15 121 T - 4 5 - n 4 -B IT M A G N IT U D E C O M P A R A T O R S DESCRIPTION The T54LS85/T74LS85 is a 4-bit Magnitude Com parator which compares two 4-bit words A,B , each
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71S1E37
T54LS85
T74LS85
T54LS85/T74LS85
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Untitled
Abstract: No abstract text available
Text: ADVANCED P o w er Te c h n o lo g y APT2X60D100J 1000V 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply -Inverters • Free Wheeling Diode
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APT2X60D100J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY b3E D 0557^ ÜDOllbfl 704 H A V P ADVANCED POW ER TECHNOLOGY' APT2X31D60J APT2X31D50J APT2X31D40J 600V 500V 400V 30A 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES
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APT2X31D60J
APT2X31D50J
APT2X31D40J
OT-227
OT-227
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eakt
Abstract: No abstract text available
Text: ADVANCED POlilER TECHNOLOGY L3E J> 05S7TDT A 0D011b4 ObT H A V P d v a n c e d P ow er T e c h n o lo g y K 2 0 —! APT2X30D60J APT2X30D50J APT2X30D40J Ai O —! 600V 30A 500V 30A 400V 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES
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05S7TDT
0D011b4
APT2X30D60J
APT2X30D50J
APT2X30D40J
OT-227
eakt
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N » M iü K O T iM O O S M 5 4 /7 4 H C T 1 6 0 /1 6 1 M 5 4 /7 4 H C T 1 6 2 /1 6 3 SYNCHRONOUS PRESETTABLE 4-BIT COUNTER • HIGH SPEED fMAX = 50 MHz (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 mA (MAX.) AT 25 °C ■ OUTPUT DRIVE CAPABILITY
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54/74LS160
M54/74HCT160,
005Mb30
T160/161
M74HCT160/162
M74HCT161/163
S-10297
DQSHb31
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Untitled
Abstract: No abstract text available
Text: A D V A N C E D PO WE R T E C H N O L O G Y b3E D • □ 2 5 7 R D ti 0 0 D 1 1 7 2 13S H A V P A dvanced P o w er Te c h n o l o g y APT2X61D60J APT2X61D50J APT2X61D40J 600V 500V 400V 60A 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES
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APT2X61D60J
APT2X61D50J
APT2X61D40J
T-227
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Untitled
Abstract: No abstract text available
Text: ADVANCED POWER TECHNOLOGY b3E D • D2S7TDT 0001152 347 «AVP A d van ced P o w er Te c h n o l o g y APT2X61D100J APT2X61D90J APT2X61D80J 1000V 900V 800V 60A 60A 60A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS
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APT2X61D100J
APT2X61D90J
APT2X61D80J
OT-227
OT-227
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Untitled
Abstract: No abstract text available
Text: 2 R 5 G 2 x 5 0 A • : O utline D raw ings FAST RECOVERY DIODE MODULE ■ # g Unit mm Mt.« J1— IS 6f.5 1T.B t lfl 6 IB ! F e a tu re s 1a 17.5 I ¿ f i • îË lil B îlB l*''îâ L ' • Short Reverse Recovery Time -ß Variety of C onnection M enu
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l2aTg30S3^
19S24#
l95t/R89
Sh150
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025Q
Abstract: MS-012AA ZXMN3B04N8 ZXMN3B04N8TA ZXMN3B04N8TC LD86A ls32a
Text: ADVANCED INFORMATION ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V B R D SS =30V : RDS(O n)=0.025Q; lD=8.6A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching
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ZXMN3B04N8
ZXMN3B04N8TA
ZXMN3B04N8TC
D-81673
025Q
MS-012AA
ZXMN3B04N8
LD86A
ls32a
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tea 1601 t
Abstract: No abstract text available
Text: Bridge D iode Single In-line Package o u t l in e d i m e n s io n s U6SBD S tt 600V 6A m a • » Ü S IP K u /ir - y •U LϧâJ U L File No.E 1 4 2 4 2 2 • ¡ Ü iÎ Œ , • H I FSM iü R g ÎÎfS »SRSS mm. OA. » ¡s e . mm. fa mm RATINGS Absolute Maximum Ratings
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U6SB20
U6SB60
50HzNDENGEN
tea 1601 t
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Untitled
Abstract: No abstract text available
Text: S ¡ ÿ G S- THOMSÔN i M2E D 7*12*1237 0033410 4 ISGTH S G S -T H O S flS O Ü T 7 4 L S 1 6 0 A / 1 6 1 A R itlQ tg ^ O d iL d Ô îls K Q K M Ô Ê i T 7 4 L S 1 6 2 A / 1 6 3 A LS160A/162A BCD DECADE COUNTERS LS161A/163A : 4-BIT BINARY COUNTERS • SYNCHRONOUS COUNTING AND LOADING
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LS160A/162A
LS161A/163A
LS160A/161
/162A/163A
T74LS160A/161
/162A/163A
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pin diagram of 74160
Abstract: 74160 function table pin diagram of 74163 74160 pin 74163 pin configuration 74ls161 counter pin configuration 74160 logic diagram of 74160 logic diagram 74160 74160 counter
Text: Signetics 74160, 74161, 74163, LS160A, LS161A, LS162A, LS163A Counters '160, '162 BCD Decade Counter '161, '163 4-Bit Binary Counter Logic Products Product Specification FEATURES • Synchronous counting and loading • Two Count Enable inputs for nbit cascading
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LS160A,
LS161A,
LS162A,
LS163A
74LS160A,
74LS162A)
74LS161
74LS163A)
54ls/74ls
pin diagram of 74160
74160 function table
pin diagram of 74163
74160 pin
74163 pin configuration
74ls161 counter pin configuration
74160
logic diagram of 74160
logic diagram 74160
74160 counter
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cd74hc161
Abstract: No abstract text available
Text: H A F R F R IS C D 7 4 H C 1 6 1 , C D 7 4 H C T 1 6 1 , SEMI CONDUCTOR C D 7 4 H C 1 6 3 , High Speed CMOS Logic Presettable Counters February 1998 Features • C D 7 4 H C T 1 6 3 Description CD74HC161, CD74HCT161 4-B it Binary Counter, Asynchronous Reset
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CD74HC161,
CD74HCT161,
CD74HC163
CD74HCT163
CD74HC163
CD74HCT163
CD74HC161
CD74HCT161
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Untitled
Abstract: No abstract text available
Text: APT8030JVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 25A 0.300Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT8030JVFR
OT-227
MIL-STD-750
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ta7291s
Abstract: No abstract text available
Text: TA7291P/S BRIDGE DRIVER Unit in mm TA7291P/S are Bridge Driver with output voltage control. FEATURES: . A Modes Available CW/CCW/STOP/BRAKE . Output Current Up to l.OA(AVE) and 2.0A(PEAK) (TA7291P), and 0.4A(AVE) and 1.2A(PEAK)(TA7291S). . Wide Range of Operating Voltage: V^ q 0pr=4.5~18V
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TA7291P/S
TA7291P/S
TA7291P)
TA7291S)
A7291P/TA7291
ta7291s
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Untitled
Abstract: No abstract text available
Text: APT5010JVFR A dvanced P o w er Te c h n o l o g y 500V POWER MOSV 44A 0.100n FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT5010JVFR
OT-227
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: APT10050JVFR A dvanced P o w er Te c h n o l o g y P O W E R 1000V 19A 0.500Í1 FREDFET M O S V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™
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APT10050JVFR
OT-227
MIL-STD-750
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