I1228
Abstract: No abstract text available
Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035-100
CLF1G0035-100
I1228
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Untitled
Abstract: No abstract text available
Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035S-50
CLF1G0035S-50
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Untitled
Abstract: No abstract text available
Text: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
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CLF1G0035S-100
CLF1G0035S-100
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bga6589
Abstract: NXP MARKING 11* 3PIN MMIC marking code C3 sot89
Text: BGA6589 MMIC wideband medium power amplifier Rev. 3 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description The BGA6589 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
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BGA6589
BGA6589
BGA6x89
NXP MARKING 11* 3PIN
MMIC marking code C3 sot89
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Abstract: No abstract text available
Text: BGA6589 MMIC wideband medium power amplifier Rev. 3 — 28 November 2011 Product data sheet 1. Product profile 1.1 General description The BGA6589 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
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BGA6589
BGA6589
BGA6x89
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smd marking codes list sot363
Abstract: rf mmic marking code 09 SOT363
Text: BGM1013 MMIC wideband amplifier Rev. 5 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
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BGM1013
OT363
smd marking codes list sot363
rf mmic marking code 09 SOT363
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BGA6289
Abstract: BGA2031
Text: BGA6289 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6289 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic low thermal
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BGA6289
BGA6289
BGA6x89
BGA2031
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marking 259 sot363
Abstract: No abstract text available
Text: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
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BGM1014
OT363
marking 259 sot363
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Untitled
Abstract: No abstract text available
Text: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
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BGM1014
OT363
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marking s222
Abstract: No abstract text available
Text: BGM1014 MMIC wideband amplifier Rev. 2 — 19 September 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit MMIC wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package.
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BGM1014
OT363
771-BGM1014-T/R
BGM1014
marking s222
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BGA2031
Abstract: BGA6489 smd code marking 616 smd Product type marking code 039 MGX400
Text: BGA6489 MMIC wideband medium power amplifier Rev. 02 — 15 June 2009 Product data sheet 1. Product profile 1.1 General description The BGA6489 is a silicon Monolithic Microwave Integrated Circuit MMIC wideband medium power amplifier with internal matching circuit in a 3-pin SOT89 plastic, low
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BGA6489
BGA6489
BGA6x89
BGA2031
smd code marking 616
smd Product type marking code 039
MGX400
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BFU790F
Abstract: JESD625-A Germanium power
Text: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU790F
OT343F
JESD625-A
BFU790F
Germanium power
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BFU760F
Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU760F
OT343F
JESD625-A
BFU760F
bfu760
dielectric resonator oscillator
germanium transistor table
Germanium power
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DRO lnb
Abstract: JESD625-A BFU630 BFU630F
Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION
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BFU630F
OT343F
JESD625-A
DRO lnb
BFU630
BFU630F
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JESD625-A
Abstract: BFU710F DRO lnb Germanium power
Text: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU710F
OT343F
JESD625-A
BFU710F
DRO lnb
Germanium power
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BFU730F
Abstract: JESD625-A 555 ic Germanium power
Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU730F
OT343F
JESD625-A
BFU730F
555 ic
Germanium power
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Germanium Transistor
Abstract: Germanium power ON5088,115
Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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ON5088
OT343F
JESD625-A
Germanium Transistor
Germanium power
ON5088,115
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BFU725F
Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F
OT343F
JESD625-A
BFU725F
germanium rf transistor
code marking s20 TRANSISTOR
germanium transistor
germanium transistors NPN
SOT343F
germanium transistor npn
LNB ka band
Germanium power
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BFU590G
Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
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OT223
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AEC-Q101
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Abstract: No abstract text available
Text: 62 7 BFU590G NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package. The BFU590G is part of the BFU5 family of transistors, suitable for small signal to medium
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OT223
BFU590G
AEC-Q101
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Germanium power
Abstract: No abstract text available
Text: ON5088 NPN wideband silicon germanium RF transistor Rev. 2 — 22 December 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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ON5088
OT343F
JESD625-A
Germanium power
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transistor marking N1
Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU725F/N1
OT343F
JESD625-A
BFU725F
transistor marking N1
LNB ka band
160 germanium transistor
ka-band mixer
DRO lnb
germanium transistors NPN
ka band lna
nxp DC to microwave
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Abstract: No abstract text available
Text: 62 7 BFU590Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU590Q is part of the BFU5 family of transistors, suitable for small signal to medium
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BFU590Q
AEC-Q101
BFU590QX
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Abstract: No abstract text available
Text: BFU690F NPN wideband silicon RF transistor Rev. 2 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits
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OT343F
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