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    NPN VCE 12V Search Results

    NPN VCE 12V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd

    NPN VCE 12V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak

    2SC3852A

    Abstract: 2sc3852 FM20 3852-A DSA0016508
    Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IC 3 A V(BR)CEO VEB=6V V µA 100max IC=25mA 60min 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ


    Original     		PDF 2SC3852/3852A 100max 60min 80min 500min 15typ 50typ O220F) 2SC3852 2SC3852A 2SC3852A FM20 3852-A DSA0016508

    2SC4495

    Abstract: FM20
    Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz


    Original     		PDF 2SC4495 10max 50min 500min 40typ 30typ 45typ 60typ 2SC4495 FM20

    2SC4495

    Abstract: FM20
    Text: 2SC4495 High hFE LOW VCE sat Silicon NPN Triple Diffused Planar Transistor A hFE IB 1 A VCE(sat) PC 25(Tc=25°C) W fT Tj 150 °C COB –55 to +150 °C Tstg µA 50min V VCE=4V, IC=0.5A 500min IC=1A, IB=20mA 0.5max V VCE=12V, IE=–0.1A 40typ MHz VCB=10V,f=1MHz


    Original     		PDF 2SC4495 10max 50min 500min 40typ 30typ 45typ 60typ 85typ 2SC4495 FM20

    2sc4024

    Abstract: FM20 DSA0016508
    Text: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz


    Original     		PDF 2SC4024 O220F) 10max 50min 24typ 150typ 100x100x2 50x50x2 2sc4024 FM20 DSA0016508

    2SC4131

    Abstract: transistor 2sc4131 VEBO-15V
    Text: 2SC4131 LOW VCE sat Silicon NPN Epitaxial Planar Transistor V 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz


    Original     		PDF 2SC4131 Pulse25) 10max 50min 18typ 210typ FM100 2SC4131 transistor 2sc4131 VEBO-15V

    2SC3852A

    Abstract: 2sc3852 FM20 transistor 2sc3852
    Text: 2SC3852/3852A High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor ICBO 80 VCB= IC 3 A V(BR)CEO VEB=6V 100 V µA 100max 60min IC=25mA 80min V 1 A hFE VCE=4V, IC=0.5A 500min PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=50mA 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A


    Original     		PDF 2SC3852/3852A 100max 60min 80min 500min 15typ 50typ 10max 2SC3852A 2SC3852 2SC3852A 2sc3852 FM20 transistor 2sc3852

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1757A CPH6538 Bipolar Transistor http://onsemi.com 30V, 0.7A, Low VCE sat NPN Dual CPH6 Features • Small-sized package with two NPN transistors (30C02CH equivalency) contained in one package • VCEO=30V, IC=0.7A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=85mV(typ.)@IC=0.2A


    Original     		PDF ENA1757A CPH6538 30C02CH A1757-6/6

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1756A CPH6539 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE sat NPN Dual CPH6 Features • Small-sized package with two NPN transistors (CPH3215 equivalency) contained in one package • VCEO=30V, IC=1.5A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=0.16V(typ.)@IC=0.75A


    Original     		PDF ENA1756A CPH6539 CPH3215 A1756-6/6

    2sc2837

    Abstract: 2SA1186
    Text: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE 50min∗ VCE=4V, IC=3V A VCE(sat) IC=5A, IB=0.5A 2.0max V 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C


    Original     		PDF 2SC2837 2SA1186) MT-100 100max 150min 50min 70typ 60typ 2sc2837 2SA1186

    2SD1796

    Abstract: relay 12v 3a datasheet FM20
    Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A


    Original     		PDF 2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 relay 12v 3a datasheet FM20

    Untitled

    Abstract: No abstract text available
    Text: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor 2 PC 30(Tc=25°C) Tj V hFE VCE=4V, IC=3A 10 to 30 A VCE(sat) IC=3A, IB=0.6A 0.5max W VBE(sat) IC=3A, IB=0.6A 1.3max V 150 °C fT VCE=12V, IE=–0.5A 15typ MHz


    Original     		PDF 2SC4130 Pulse14) O220F) 100max 400min 15typ 50typ

    2SC5100

    Abstract: 2SA1908 DSA0016511
    Text: 2SC5100 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1908 hFE IB 3 A VCE(sat) PC 75(Tc=25°C) W fT 150 °C COB °C ∗hFE Rank Tj Tstg –55 to +150 V 120min IC=50mA VCE=4V, IC=3A 50min∗ IC=3A, IB=0.3A 0.5max V VCE=12V, IE=–0.5A


    Original     		PDF 2SC5100 2SA1908) 50min 13typ 50typ 32typ 120min 10max FM100 2SC5100 2SA1908 DSA0016511

    2SC3284

    Abstract: 2SA1303 DSA0016507
    Text: 2SC3284 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1303 Ratings Unit ICBO VCB=150V 100max µA VCEO 150 V IEBO VEB=5V 100max µA IC=25mA 150min V VCE=4V, IC=5A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 125(Tc=25°C) W fT VCE=12V, IE=–2A


    Original     		PDF 2SC3284 2SA1303) MT-100 100max 150min 50min 60typ 200typ 2SC3284 2SA1303 DSA0016507

    2SC4153

    Abstract: FM20
    Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


    Original     		PDF 2SC4153 120min 30typ 110typ 100x100x2 150x150x2 50x50x2 2SC4153 FM20

    2SD1796

    Abstract: FM20
    Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor 4 A hFE mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB


    Original     		PDF 2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 FM20

    L2SD2114KVLT1G

    Abstract: L2SD2114KWLT1G
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)


    Original     		PDF L2SD2114KVLT1G 500mA 236AB) OT-23 L2SD2114KWLT1G

    2SC4153

    Abstract: 2SC4153 equivalent FM20 100X100X2
    Text: 2SC4153 Silicon NPN Triple Diffused Planar Transistor Switchihg Transistor µA 120min V hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max V Tj 150 °C fT VCE=12V, IE=–0.5A 30typ MHz °C


    Original     		PDF 2SC4153 120min 30typ 110typ ulse14) 100max O220F) 50x50x2 2SC4153 2SC4153 equivalent FM20 100X100X2

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1 High DC current gain. hFE = 1200 Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)


    Original     		PDF L2SD2114KVLT1G 500mA 236AB) OT-23

    2SC5099

    Abstract: 2SA1907 DSA0016511
    Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		PDF 2SC5099 2SA1907) FM100 10max 80min 50min 20typ 110typ 2SC5099 2SA1907 DSA0016511

    2SC2837

    Abstract: 2SA1186 cin60 2SA1186 2SC2837 DSA0016506
    Text: 2SC2837 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1186 VCB=150V 100max µA V IEBO VEB=5V 100max µA IC=25mA 150min V hFE VCE=4V, IC=3V 50min∗ V 2 A VCE(sat) IC=5A, IB=0.5A PC 100(Tc=25°C) W fT VCE=12V, IE=–1A 70typ MHz Tj 150 °C


    Original     		PDF 2SC2837 2SA1186) MT-100 100max 150min 50min 70typ 60typ 2SC2837 2SA1186 cin60 2SA1186 2SC2837 DSA0016506

    2SC4886

    Abstract: 2SA1860 DSA0016510
    Text: 2SC4886 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1860 A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank


    Original     		PDF 2SC4886 2SA1860) 100max 150min 50min 500mA 60typ 200typ 26typ 35typ 2SC4886 2SA1860 DSA0016510

    2SC4511

    Abstract: TRANSISTOR C-111 2SA1725 FM20 DSA0016510
    Text: 2SC4511 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1725 V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz


    Original     		PDF 2SC4511 2SA1725) 10max 80min 50min 20typ 110typ to100) to140) 2SC4511 TRANSISTOR C-111 2SA1725 FM20 DSA0016510

    2SA1907

    Abstract: 2SC5099
    Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 µA V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ


    Original     		PDF 2SC5099 2SA1907) FM100 10max 80min 50min 20typ 2SA1907 2SC5099