Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NPN TRANSISTOR C105 Search Results

    NPN TRANSISTOR C105 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR C105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C10535E

    Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
    Text: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES


    Original     		PDF NE52418 NE52418 OT-343 NE52418-T1 C10535E NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN

    4 npn transistor ic 14pin

    Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
    Text: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation


    Original     		PDF PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor C10535E MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY

    transistor marking T79 ghz

    Abstract: marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA


    Original     		PDF 2SC5508 2SC5508-T2 transistor marking T79 ghz marking T79 MARKING T79 "NPN Transistor" 2SC5508 2SC5508-T2 C10535E transistor marking T79

    33 nec 125 t2

    Abstract: transistor marking T78 ghz C10535E NE661M04 NE661M04-T2
    Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA


    Original     		PDF NE661M04 NE661M04-T2 33 nec 125 t2 transistor marking T78 ghz C10535E NE661M04 NE661M04-T2

    4 npn transistor ic 14pin

    Abstract: 8 npn transistor ic 14pin C10535E UPA102G
    Text: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


    Original     		PDF PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6

    2SC5507-T2

    Abstract: transistor NEC 882 p 2SC5507 C10535E transistor marking T78 ghz
    Text: PRELIMINARY DATA SHEET NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA


    Original     		PDF 2SC5507 2SC5507-T2 2SC5507-T2 transistor NEC 882 p 2SC5507 C10535E transistor marking T78 ghz

    NEC 1357

    Abstract: 2SC5509 2SC5509-T2 C10535E 487 4PIN
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5509 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER ⋅ LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz


    Original     		PDF 2SC5509 2SC5509-T2 NEC 1357 2SC5509 2SC5509-T2 C10535E 487 4PIN

    4 npn transistor ic 14pin

    Abstract: C10535E PA103 lowest noise audio NPN transistor
    Text: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:


    Original     		PDF PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor

    C10535E

    Abstract: C11531E fb1l3n
    Text: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive


    Original     		PDF C11531E) C10535E C11531E fb1l3n

    D1062

    Abstract: 2SD2582 C10535E C10943X MEI-1202 965 ic data
    Text: DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 30 V 30 V Emitter to Base Voltage


    Original     		PDF 2SD2582 D1062 2SD2582 C10535E C10943X MEI-1202 965 ic data

    7415 ic pin details

    Abstract: C10535E NE52118 NE52118-T1
    Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω


    Original     		PDF NE52118 NE52118-T1 7415 ic pin details C10535E NE52118 NE52118-T1

    C10535E

    Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
    Text: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω


    Original     		PDF NE52318 OT-343 NE52318-T1 C10535E NE52318 NE52318-T1 NPN transistor 9418 26364

    HD965

    Abstract: 2SD965 C105B transistor NPN TO-92 Vebo6v
    Text: NPN 汕头华汕电子器件有限公司 SILICON TRANSISTOR 965 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：C105BJ-01 芯片厚度：240±20µm 管芯尺寸：1050x1050µm 2 焊位尺寸：B 极 280×345µm 2；E 极 275×415µm 2


    Original     		PDF 100mm C105BJ-01 2SD965HD965 30VIE HD965 2SD965 C105B transistor NPN TO-92 Vebo6v

    CA6V

    Abstract: audio taper potentiometer 100k cts capacitor 470uf 25v 470uF/ 25V capacitor 10K CA6V CR0805-10W-1001FT C144 DIGITAL NPN TRANSISTOR AKM4114 transistor SOT23 PJ6 AFM2
    Text: Freescale Semiconductor Users Guide DSPAUDIOEVM Users Guide This document contains information on a new product. Specifications and information herein are subject to change without notice. Freescale Semiconductor, Inc., 2004. All rights reserved. DSPAUDIOEVMUG


    Original     		PDF

    panasonic inverter 707 manual

    Abstract: traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor
    Text: User’s Manual 78K0/IB2 Fluorescent Ballast Evaluation Board Target Device 78K0/IB2 Microcontroller ZBB-CE-09-0011-E Data Published March 2009 NEC Electronics Corporation 1/25 The information in this document is current as of March, 2009. The information is subject to change


    Original     		PDF 78K0/IB2 78K0/IB2 ZBB-CE-09-0011-E TC74VHC125F TC74VHC14F 3386F-1-104TLF CMR309T-16 000MABJ-UT panasonic inverter 707 manual traffic light using 68K 2PC 502 DSP02-002-431G C516* npn transistor GRM21BR11H104KA01L 501C LED Driver EZ-0008 p120 photocoupler C517 transistor

    CA6V

    Abstract: transistor SOT23 PJ6 AFM2 capacitor 470uf 25v 10K CA6V MOTOROLA DSP563XX architecture 5075BR subwoofer motherboard CR0805 DSPAUDIOEVMMB1
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. DSPAUDIOEVM Evaluation Board User’s Manual Order Number: DSPAUDEVMEBUM/D Revision 1, January 2003 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.


    Original     		PDF

    dali master schematic

    Abstract: DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual
    Text: Application Note Controlling Fluorescent Lamp Ballasts by Using 78K0/Ix2 This application note describes how to control fluorescent lamp ballasts by using the various features of the 78K0/Ix2 microcontroller. Details about power factor correction PFC controlled by using a PWM timer that operates in


    Original     		PDF 78K0/Ix2 78K0/IY2 78K0/IA2 78K0/IB2 U19665EJ2V0AN00 G0706 dali master schematic DSP02-002-431G GRM21BR11H104KA01L dali schematic TRANSISTOR 707 diode 702 1ss133 diode mip022 ic501 panasonic inverter 707 manual

    dali master schematic

    Abstract: dali schematic diode 702 TRANSISTOR 707 ceramic capacitor 102 DSP02-002-431G GRM21BR11H104KA01L traffic light using 68K GP1UX511QS p120 photocoupler
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706 dali master schematic dali schematic diode 702 TRANSISTOR 707 ceramic capacitor 102 DSP02-002-431G GRM21BR11H104KA01L traffic light using 68K GP1UX511QS p120 photocoupler

    transistor marking T79 ghz

    Abstract: TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz
    Text: dò l o X , , 1 PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5508 NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications


    OCR Scan     		PDF 2SC5508 2SC5508 2SC5508-T2 transistor marking T79 ghz TT 2076 transistor MARKING T79 "NPN Transistor" transistor T79 ghz

    Untitled

    Abstract: No abstract text available
    Text: fìjUeJc&gct - / PRELIMINARY DATA SHEET_ NPN SILICON RF TRANSISTOR 2SC5507 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current


    OCR Scan     		PDF 2SC5507 2SC5507 2SC5507-T2

    D1088

    Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
    Text: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o


    OCR Scan     		PDF 2SC2001 02SA952tl SC-43B D11738JJ3V0DS00 10lfllAfl D1088 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33

    bd7995

    Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
    Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND


    OCR Scan     		PDF 8366IT STR910A B26000 B26050 B2G010 B26010 B2701D 9SM102/V4T7 bd7995 P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031