Untitled
Abstract: No abstract text available
Text: BCP 54 NPN SILICON TRANSISTOR QUICK REFERENCE DATA Medium power NPN sIllcon transistor tn a mtntature plastic envelope Intended for use In drwer stages of audio amplifier telephony and general mdustnal appllcatlon T VCBO = 45 V VCEO = 45 V VEBO=5V ICM = 1.5A
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-100mA
-10mA
Mar-97
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NPN transistor 8050
Abstract: transistor 8050 transistor b 8050 npn 8050 8050 transistor D 8050
Text: NPN TRANSISTOR 8050 1.5A Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage
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100uA
100urrent
1500mA,
500mA
NPN transistor 8050
transistor 8050
transistor b 8050
npn 8050
8050 transistor
D 8050
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1756A CPH6539 Bipolar Transistor http://onsemi.com 30V, 1.5A, Low VCE sat NPN Dual CPH6 Features • Small-sized package with two NPN transistors (CPH3215 equivalency) contained in one package • VCEO=30V, IC=1.5A • Low Collector-to-Emitter Saturation Voltage VCE(sat)=0.16V(typ.)@IC=0.75A
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ENA1756A
CPH6539
CPH3215
A1756-6/6
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Untitled
Abstract: No abstract text available
Text: 2SAR554P Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554P 3) Low VCE(sat)
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2SAR554P
SC-62)
OT-89>
2SCR554P
-500mA/
-25mA)
R1102A
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D1918
Abstract: No abstract text available
Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V
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2SD1918
SC-63)
OT-428>
2SB1275
D1918
R1102A
D1918
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B1275
Abstract: No abstract text available
Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V
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2SB1275
-160V
-160V
SC-63)
OT-428>
2SD1918
B1275
B1275
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Untitled
Abstract: No abstract text available
Text: 2SD2702 / 2SD2674 Datasheet NPN 1.5A 12V Middle Power Transistor lOutline Parameter Value VCEO IC TUMT3 TSMT3 Collector Collector 12V 1.5A Base Base Emitter Emitter 2SD2674 SC-96 2SD2702 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1732, 2SB1709
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2SD2702
2SD2674
SC-96)
2SD2702
2SB1732,
2SB1709
500mA/25mA)
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Untitled
Abstract: No abstract text available
Text: 2SAR554P 2SAR554PFRA Datasheet PNP -1.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC -80V -1.5A MPT3 Base Collector Emitter 2SAR554PFRA 2SAR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554PFRA
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2SAR554P
2SAR554PFRA
AEC-Q101
SC-62)
OT-89>
2SCR554PFRA
2SCR554P
-500mA/
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Untitled
Abstract: No abstract text available
Text: 2SCR554P 2SCR554PFRA Datasheet NPN 1.5A 80V Middle Power Transistor AEC-Q101 Qualified lOutline Parameter Value VCEO IC 80V 1.5A MPT3 Base Collector Emitter 2SCR554PFRA 2SCR554P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554PFRA
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2SCR554P
2SCR554PFRA
AEC-Q101
SC-62)
OT-89>
2SAR554PFRA
2SAR554P
500mA/25mA)
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2scr375
Abstract: No abstract text available
Text: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)
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2SCR375P
SC-62)
OT-89>
800mA/80mA)
R1102A
2scr375
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Untitled
Abstract: No abstract text available
Text: 2SCR554R Datasheet NPN 1.5A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.5A TSMT3 Collector Base Emitter 2SCR554R SC-96 lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SAR554R 3) Low VCE(sat) VCE(sat)=0.30V(Max.)
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2SCR554R
SC-96)
2SAR554R
500mA/25mA)
R1102A
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M54661P
Abstract: 89COM M54661FP 8 pin 4v power supply ic pnp 8 transistor array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54661P/FP 4-UNIT 80V/1.5A DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54661P and M54661FP are four-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54661P/FP
M54661P
M54661FP
opera04
89COM
8 pin 4v power supply ic
pnp 8 transistor array
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Untitled
Abstract: No abstract text available
Text: 2SAR554R Datasheet PNP -1.5A -80V Middle Power Transistor lOutline Parameter Value VCEO IC -80V -1.5A TSMT3 Collector Base Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary NPN Types : 2SCR554R 3) Low VCE sat) VCE(sat)= -0.4V(Max.) (IC/IB= -500ｍA/ -25mA)
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2SAR554R
2SCR554R
-25mA)
SC-96)
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SD2662 Datasheet NPN 1.5A 30V Middle Power Transistor lOutline Parameter Value VCEO IC 30V 1.5A MPT3 Base Collector Emitter 2SD2662 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1698 3) Low VCE(sat) VCE(sat)=0.35V(Max.)
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2SD2662
SC-62)
OT-89>
2SB1698
A/50mA)
R1102A
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Untitled
Abstract: No abstract text available
Text: 2SB1698 Datasheet PNP -1.5A -30V Middle Power Transistor lOutline Parameter Value VCEO IC -30V -1.5A MPT3 Base Collector Emitter 2SB1698 SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD2662 3) Low VCE(sat) VCE(sat)= -0.37V(Max.)
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2SB1698
SC-62)
OT-89>
2SD2662
-50mA)
R1102A
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CPH3215
Abstract: SC-95
Text: CPH6539 Ordering number : ENA1756 SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A
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CPH6539
ENA1756
CPH3215
A1756-4/4
SC-95
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Untitled
Abstract: No abstract text available
Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A
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CPH6539
ENA1756A
CPH3215
A1756-6/6
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CPH6539
Abstract: marking 62712
Text: CPH6539 Ordering number : ENA1756A SANYO Semiconductors DATA SHEET CPH6539 NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications Features • Small-sized package with two NPN transistors CPH3215 equivalency contained in one package • VCEO=30V, IC=1.5A
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ENA1756A
CPH6539
CPH3215
A1756-6/6
CPH6539
marking 62712
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bd139 application note
Abstract: BD139 NPN BD139 application
Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS
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BD139
O-126
Tmb70
QW-R204-007
bd139 application note
BD139 NPN
BD139 application
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Untitled
Abstract: No abstract text available
Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS
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BD139
O-251
150mA
500mA
150mA,
100MHz
QW-R213-010
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transistor Bd 699
Abstract: HBD139 HBD140
Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 2001.08.01 Revised Date : 2001.08.24 Page No. : 1/3 MICROELECTRONICS CORP. HBD139 NPN POWER TRANSISTORS Description PNP power transistor in a TO-126 plastic package. NPN complements: HBD140 Features • High Current max. 1.5A
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HBD139
O-126
HBD140
transistor Bd 699
HBD139
HBD140
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Untitled
Abstract: No abstract text available
Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-126 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS
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BD139
O-126
BD139-10
BD139-16
150mA
500mA
150mA,
100MHz
QW-R204-007
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BD139 application
Abstract: BD139 NPN transistor TRANSISTOR NPN BD139 BD139 BD139 NPN hFE-120 npn
Text: UTC BD139 NPN EPITAXIAL SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES *High current max.1.5A *Low voltage (max.80V) APPLICATION *Driver stages in hi-fi amplifiers and television circuits. 1 TO-251 1:BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS
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BD139
O-251
QW-R213-010
BD139 application
BD139 NPN transistor
TRANSISTOR NPN BD139
BD139
BD139 NPN
hFE-120 npn
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MMBT8050C
Abstract: MMBT8050CLT1 MMBT8050DLT1 MMBT8550CLT1 MMBT8050D
Text: MMBT8050CLT1 / MMBT8050DLT1 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050C
MMBT8050DLT1
MMBT8050D
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