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    NPN MEDIUM POWER TRANSISTOR IN A SOT PACKAGE Search Results

    NPN MEDIUM POWER TRANSISTOR IN A SOT PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH8R316MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -90 A, 0.0064 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH3R10AQM Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 120 A, 0.0031 Ω@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    NPN MEDIUM POWER TRANSISTOR IN A SOT PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


    Original     		PDF DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734

    BD179

    Abstract: No abstract text available
    Text: BD179  NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching


    Original     		PDF BD179 BD179 OT-32 OT-32

    BD179

    Abstract: No abstract text available
    Text: BD179 NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION ■ GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching


    Original     		PDF BD179 BD179 OT-32 OT-32

    BD179

    Abstract: No abstract text available
    Text: BD179 NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR APPLICATION GENERAL PURPOSE SWITCHING ■ DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package, designed for medium power linear and switching


    Original     		PDF BD179 BD179 OT-32 OT-32

    16-2-472

    Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
    Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501

    XS 630 B

    Abstract: ic smd a 1712 THN5602F NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566
    Text: THN5602F SOT-89 NPN SiGe RF POWER TRANSISTOR The THN5602F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor 4 encapsulated in a plastic SOT-89 SMD package. The THN5602F can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5602F OT-89 THN5602F OT-89 465MHz 100nF XS 630 B ic smd a 1712 NPN medium power transistor in a smd CIRCUIT SCHEMATIC diagram Transistor B 1566

    E8080

    Abstract: No abstract text available
    Text: BD179 NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for medium power linear and switching applications. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM


    Original     		PDF BD179 BD179 OT-32 OT-32 E8080

    DRF1601

    Abstract: smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER
    Text: UHF POWER TRANSISTOR DRF1601 NPN SiGe RF TRANSISTOR The DRF1601 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1601 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1601 DRF1601 OT-223 900MHz 100nF 100pF smd transistor js UHF POWER TRANSISTOR NPN medium power transistor in a smd FR4 epoxy dielectric constant 4.2 power transistor SMD TRANSISTOR smd transistor 026 PL SOT223 UHF POWER

    smd transistor k 1540

    Abstract: 703 TRANSISTOR smd transistor 835 transister transister smd DRF1401 NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js
    Text: UHF POWER TRANSISTOR DRF1401 NPN SiGe RF TRANSISTOR The DRF1401 is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The DRF1401 can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF DRF1401 DRF1401 OT-223 900MHz 100nF 100pF smd transistor k 1540 703 TRANSISTOR smd transistor 835 transister transister smd NPN medium power transistor in a smd SiGe POWER TRANSISTOR SMD transister smd transistor js

    smd transistor zl

    Abstract: rf transistor mar 8 DRF1401 THN5601B
    Text: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.


    Original     		PDF THN5601B THN5601B OT-223 900MHz Mar-22-2005 100nF 100pF smd transistor zl rf transistor mar 8 DRF1401

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D

    Untitled

    Abstract: No abstract text available
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D

    SP19A

    Abstract: No abstract text available
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D SP19A

    SP19A

    Abstract: AYW marking code IC BSP16T1 BSP19AT1G
    Text: BSP19AT1G NPN Silicon Expitaxial Transistor This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.


    Original     		PDF BSP19AT1G OT-223 BSP19AT1/D SP19A AYW marking code IC BSP16T1 BSP19AT1G

    IC 7447

    Abstract: 10358 2SC5751 NE677M04 NE677M04-T2 S21E 0 811 404 614
    Text: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE677M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 The NE677M04 is housed in NEC's new low profile/flat lead


    Original     		PDF NE677M04 NE677M04 IC 7447 10358 2SC5751 NE677M04-T2 S21E 0 811 404 614

    c 4468 power transistor

    Abstract: IC 7447 2SC5751 NE677M04 NE677M04-T2 S21E 4260 transistor sot IC 4468
    Text: MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE677M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 The NE677M04 is housed in NEC's new low profile/flat lead


    Original     		PDF NE677M04 NE677M04 c 4468 power transistor IC 7447 2SC5751 NE677M04-T2 S21E 4260 transistor sot IC 4468

    IC 7447

    Abstract: c 4468 power transistor 2SC5751 NE677M04 NE677M04-T2-A S21E 7489 NEC 9418 transistor 7447 IC part number
    Text: NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 NEC's NE677M04 is housed in NEC's new low profile/flat lead


    Original     		PDF NE677M04 NE677M04 IC 7447 c 4468 power transistor 2SC5751 NE677M04-T2-A S21E 7489 NEC 9418 transistor 7447 IC part number

    POWER AND MEDIUM POWER TRANSISTOR

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ IC 7447 2SC5751 NE677M04 NE677M04-T2 S21E c 4468 power transistor
    Text: NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 NEC's NE677M04 is housed in NEC's new low profile/flat lead


    Original     		PDF NE677M04 NE677M04 POWER AND MEDIUM POWER TRANSISTOR RF NPN POWER TRANSISTOR 2.5 GHZ IC 7447 2SC5751 NE677M04-T2 S21E c 4468 power transistor

    NE664M04

    Abstract: 2SC5751
    Text: PRELIMINARY DATA SHEET MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NE677M04 FEATURES • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 The NE677M04 is housed in NEC's new low profile/flat lead


    Original     		PDF NE677M04 OT-343 NE677M04 NE664M04 NE677M04-T2 08cm2 2SC5751

    TRANSISTOR D16

    Abstract: No abstract text available
    Text: Die no. D-16 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm SST3 Features available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at 1.0 mA


    OCR Scan     		PDF OT-23) SSTA06 TRANSISTOR D16

    TRANSISTOR D54

    Abstract: d54 marking TRANSISTOR B54
    Text: NPN medium power transistor Die no. D-54 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm MPT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 I1.5( — TY ‘ 0.1 collector-to-emitter breakdown voltage, BVCE0 = 80 V (min) at


    OCR Scan     		PDF OT-89) BCX56 BCX53, TRANSISTOR D54 d54 marking TRANSISTOR B54

    RTO BH

    Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
    Text: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at


    OCR Scan     		PDF OT-23) RTO BH NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369

    Untitled

    Abstract: No abstract text available
    Text: NPN medium power transistor Die no. D-15 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm SST3 Features l.9±0.Z 0.95 0.95 available in a SST3 (SST, SOT-23) package, see page 300 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at


    OCR Scan     		PDF OT-23) BCX19

    Untitled

    Abstract: No abstract text available
    Text: Die no. D-54 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm M PT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 4 . 5 —o ) I l .6 ± 0 .l 1 .5 -0 .1 ~ ,m collector-to-emitter breakdown


    OCR Scan     		PDF OT-89) BCX56 BCX53,