MJE802
Abstract: No abstract text available
Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,
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MJE802
MJE802
OT-32
OT-32
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Untitled
Abstract: No abstract text available
Text: 2N6294 NPN Darlington Transistor 4.94 Transistors Darlington Transistors NPN Americ. Page 1 of 1 Enter Your Part # Home Part Number: 2N6294 Online Store 2N6294 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N6294
2N6294
com/2n6294
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2N998
Abstract: NPN POWER DARLINGTON TRANSISTORS
Text: 2N998 NPN Darlington Transistor 9.00 Transistors Darlington Transistors NPN America. Page 1 of 1 Enter Your Part # Home Part Number: 2N998 Online Store 2N998 Diodes NPN Darlington Transistor Transistors Enter code INTER3 at checkout.* Integrated Circuits
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2N998
2N998
com/2n998
NPN POWER DARLINGTON TRANSISTORS
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
P011C
2N6388
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
2N6388
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
2N6388
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2N6388
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
O-220
2N6388
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MJE802
Abstract: No abstract text available
Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and it is mounted in Jedec SOT-32 plastic
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MJE802
MJE802
OT-32
OT-32
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1N4001 transistor free
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
1N4001 transistor free
BC337 figure
1N4001
BC337
BU323P
silicon diode 1N4001 specifications
transistor BC337
transistor darlington npn
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BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
BC337 rbe
BC337 figure
1N4001
BC337
BU323P
diode 1N4001 voltage limitations
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MJE802
Abstract: No abstract text available
Text: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS ■ GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration and it is mounted in Jedec SOT-32 plastic
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MJE802
MJE802
OT-32
OT-32
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MJ10021 equivalent
Abstract: SUS CIRCUIT 1N4937 MJ10020 MJ10021 tektronix 475
Text: ON Semiconductort MJ10020 MJ10021 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for
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MJ10020
MJ10021
MJ10020
MJ10021
r14525
MJ10020/D
MJ10021 equivalent
SUS CIRCUIT
1N4937
tektronix 475
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2SD418
Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,
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MJ10000
204AA
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
TIP75B
2SD418
TIP33C equivalent
k 3436 transistor
IR647
TIP121 transistor
buv18a
BU108
2SC1086
tip122 motor control
2N6023
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MJ10006
Abstract: MJ10007 1N4937 mj10006 equivalent
Text: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,
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MJ10007
MJ10007
10Nlit
r14525
MJ10007/D
MJ10006
1N4937
mj10006 equivalent
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BU806
Abstract: No abstract text available
Text: MOTOROLA Order this document by BU806/D SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal
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220AB
BU806
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MJ10005 equivalent
Abstract: MJ10005 transistor mj10005 1N4937 MJ10004
Text: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,
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MJ10005
MJ10005
100Nlit
r14525
MJ10005/D
MJ10005 equivalent
transistor mj10005
1N4937
MJ10004
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MJ10016
Abstract: MJ10015 1N4937
Text: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for
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MJ10015
MJ10016
MJ10015
MJ10016
r14525
MJ10015/D
1N4937
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON iMiniSiRitaignigfafiRiOBinieg MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration
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MJE802
MJE802
OT-32
GC73280
OT-32
O-126)
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Untitled
Abstract: No abstract text available
Text: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration
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2N6388
O-220
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photo transistor til 78
Abstract: ECG3040 ECG3045 ecg 3041 ECG3041 ECG3047 3094 transistor ECG3090 ECG3086 ECG3098
Text: Optoisolators DC Current Transfer Ratio Isolation Voltage Viso Surge V Total Power Pt (mW) 7500 7500 250 250 20 100 ECG3045 NPN Darlington NPN Darlington 7500 3550 7500 7500 250 260 300 300 ECG3081 NPN Transistor 6000 ECG3082 NPN Darlington 6000 ECG3083
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ECG3040
ECG3041
ECG3042
ECG3043
ECG3044
ECG3045
photo transistor til 78
ecg 3041
ECG3047
3094 transistor
ECG3090
ECG3086
ECG3098
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motorola transistor ignition
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR
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BU323AP
340D-01
motorola transistor ignition
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K1001
Abstract: 654V k1001 transistor
Text: r=7 SGS-THOMSON m 7M [^D l]©llLl©Tri©K1001_ MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration
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K1001_
MJE802
MJE802
OT-32
300jxs,
K1001
654V
k1001 transistor
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bu323a
Abstract: motorola transistor ignition
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Ttansistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. 16 AMPERE PEAK POWER TRANSISTOR DARLINGTON NPN
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BU323A
motorola transistor ignition
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mj10000
Abstract: MJ10001
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,
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MJ10000
MJ10000
MJ10001
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