2SD612
Abstract: 2SD612K
Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD612 2SD612K DESCRIPTION •With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power
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2SD612
2SD612K
O-126
2SB632/632K
5V/35V,
2SD612
500mA
2SD612K
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2SD612
Abstract: 2SD612K
Text: Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power
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2SD612
2SD612K
O-126
2SB632/632K
5V/35V,
2SD612
500mA
2SD612K
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TSB772
Abstract: BVceo-50V TSD882 TSD882CK
Text: TSD882 Low Vce sat NPN Transistor TO-126 Pin assignment: BVCEO = 50V Ic = 3A VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A TO-126 1. Emitter 2. Collector 3. Base Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics
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TSD882
O-126
TSD882CK
TSB772
100MHz
380uS,
TSB772
BVceo-50V
TSD882
TSD882CK
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2SC5099
Abstract: 2SA1907 DSA0016511
Text: 2SC5099 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1907 V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz
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2SC5099
2SA1907)
FM100
10max
80min
50min
20typ
110typ
2SC5099
2SA1907
DSA0016511
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d 772 transistor
Abstract: TSD882 to-92 BV 86 transistor 152 M TRANSISTOR BV 32 TSB772 TSD882 TSD882CK NPN 2A TO 126
Text: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 50V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772
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TSD882
O-126
200mA
TSB772
TSD882CK
d 772 transistor
TSD882 to-92
BV 86
transistor 152 M
TRANSISTOR BV 32
TSB772
TSD882
NPN 2A TO 126
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TRANSISTOR 434
Abstract: NPN 2A TO 126
Text: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 50V BVCEO 50V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Complementary part with TSB772
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TSD882
O-126
200mA
TSB772
TSD882CK
O-126
250pcs
TRANSISTOR 434
NPN 2A TO 126
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60V transistor npn 2a
Abstract: d 772 transistor NPN 2A TO 126 60V transistor npn ic2a to-126 transistor Transistor TO-126 Transistor to 126
Text: TSD882 Low Vcesat NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 60V BVCEO 30V IC 3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) Complementary part with TSB772 Part No.
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TSD882
O-126
200mA
TSB772
TSD882CK
O-126
200pcs
60V transistor npn 2a
d 772 transistor
NPN 2A TO 126
60V transistor npn ic2a
to-126 transistor
Transistor TO-126
Transistor to 126
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NPN Transistor 450v 1A To-92
Abstract: No abstract text available
Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13003A
O-126
TS13003ACK
NPN Transistor 450v 1A To-92
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Untitled
Abstract: No abstract text available
Text: TS13003A High Voltage NPN Transistor TO-126 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 450V BVCBO 700V IC VCE SAT Features 2A 0.5V @ IC=1A, IB=0.25A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13003A
O-126
TS13003ACK
50pcs
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Untitled
Abstract: No abstract text available
Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer
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TS13005CK
O-126
TS13005CK
50pcs
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Untitled
Abstract: No abstract text available
Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 3A 0.17V @ IC=1A, IB=0.2A Block Diagram ● Low spread of dynamic parameters ● High switching speed ●
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TS13005CK
O-126
TS13005CK
50pcs
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BD131
Abstract: BD132 2A 50V NPN
Text: SavantIC Semiconductor Product Specification BD131 Silicon NPN Power Transistors DESCRIPTION •Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN
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BD131
BD132
O-126
100MHz
BD131
BD132
2A 50V NPN
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bd131 equivalent
Abstract: BD131 EQUIVALENT IC bd131 BD132
Text: Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors • DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING
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BD131
BD132
O-126
100MHz
bd131 equivalent
BD131 EQUIVALENT IC
bd131
BD132
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BD681
Abstract: BD675A 679a BD679A BD677A HFE BD681 677a
Text: SavantIC Semiconductor Product Specification BD675A/677A/679A/681 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD676A/678A/680A/682 ·DARLINGTON APPLICATIONS ·For medium power linear and switching applications PINNING
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BD675A/677A/679A/681
O-126
BD676A/678A/680A/682
BD675A
BD677A
BD679A
BD681
BD681
BD675A
679a
BD679A
BD677A
HFE BD681
677a
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2SD1691
Abstract: 2SD1691L 2SB1151 TO-220F1 NPN
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 TO-220F1 1 TO-126 1 TO-126C ORDERING INFORMATION Ordering Number Lead Free Plating
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2SD1691
O-220
2SB1151
O-220F1
O-126
O-126C
2SD1691L-x-T60-K
2SD1691G-x-T60-K
2SD1691L-x-T6C-K
2SD1691G-x-T6C-K
2SD1691
2SD1691L
2SB1151
TO-220F1 NPN
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BD441
Abstract: BD439 BD440 BD442
Text: SavantIC Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD440,BD442 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2
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BD439
BD441
O-126
BD440
BD442
BD439
BD441
BD442
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-126 TO-126C 1 ORDERING INFORMATION Ordering Number Lead Free Plating
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2SD1691
O-220F1
O-220
2SB1151
O-126
O-126C
2SD1691L-x-TA3-T
2SD1691G-x-TA3-T
2SD1691L-x-TF1-T
2SD1691G-x-TF1-T
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2SD1691L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT 1 1 TO-220F1 TO-220 FEATURES *High Power Dissipation *Complementary to 2SB1151 1 1 TO-252 TO-251 1 1 TO-126 ORDERING INFORMATION Ordering Number
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2SD1691
O-220F1
O-220
2SB1151
O-252
O-251
O-126
2SD1691L-x-TA3-T
2SD1691G-x-TA3-T
2SD1691L-x-TF1-T
2SD1691L
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BD441
Abstract: BD439 equivalent bd439 BD440 BD442
Text: Inchange Semiconductor Product Specification BD439 BD441 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD440,BD442 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter
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BD439
BD441
O-126
BD440
BD442
BD439
BD441
equivalent bd439
BD442
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ic 803
Abstract: mje800 mje802
Text: SavantIC Semiconductor Product Specification MJE800/801/802/803 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type MJE700/701/702/703 ·High DC current gain ·DARLINGTON APPLICATIONS ·Designed for general–purpose amplifier
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MJE800/801/802/803
O-126
MJE700/701/702/703
MJE800/801
MJE802/803
MJE800/802
MJE801/803
ic 803
mje800
mje802
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2N6039
Abstract: 2N6037 2N6038 2n6034
Text: SavantIC Semiconductor Product Specification 2N6037 2N6038 2N6039 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier
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2N6037
2N6038
2N6039
O-126
2N6034/6035/6036
2N6037
2N6038
2N6039
2n6034
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cb 237
Abstract: BD235 bd233
Text: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS
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O-126
BD233/235/237
BD233
BD235
BD237:
-65TC
1501c
BD233
B0235
BD237
cb 237
BD235
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BD233
Abstract: BD237-10 BD235 BD237
Text: TO-126 Plastic-Encapsulate Transistors^ BD233/235/237 TRANSISTOR NPN FEATURES - . . . A . Power dissipation Pcm: T O -1 2 6 1.25 W (Tamb=25°C) Æ'J : ^ “lector current 2A Ic m : 1 .E M IT T E R m ^ ^ so e sss^ •base voltage V(BR)cBo: BD233 : 4 5 V 2 .COLLECTOR
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O-126
BD233/235/237
BD233
BD235
BD237:
BD233
100uA
BD237
BD237-10
BD235
BD237
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K*D1691
Abstract: No abstract text available
Text: KSD1691 NPN EPITAXIAL SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT TO-126 HIGH POWER DISSIPATION : PT = 1.3W T. =25°C Complementary to KSB1151 ABSOLUTE MAXIMUM RATINGS Symbol Characteristic Collector-Base Voltage Collector-Emitter Voltage
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KSD1691
KSB1151
O-126
K*D1691
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