surface mounted transistor 1BW 17
Abstract: 74VHCT244AFT S390X Hamamatsu Color sensor address MSTAR
Text: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4
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SD-26
SE-171
KMPD9001E05
surface mounted transistor 1BW 17
74VHCT244AFT
S390X
Hamamatsu Color sensor address
MSTAR
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Untitled
Abstract: No abstract text available
Text: TECHNICAL INFORMATION SD-26 Characteristic and use of NMOS linear image sensors Contents 1. Introduction . 4 2. Structure and basic operation . 4
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SD-26
SE-171
KMPD9001E06
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relay 12v 200 ohm
Abstract: load-dump airbag temic telefunken IC flasher
Text: BCDMOS and I2L Technologies BCDMOS Characteristics Power transistor: MOS transistors: CMOS 5 V: Bipolar: Masks: Wiring: Channel length: VBR = 55 V, rDSon = 4.5 mWcm2 NMOS/PMOS 12 V 9 500 Gates/mm2 npn/pnp lateral 18 2 layers 2 mm (CMOS) Transistors Parameter
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10-mV
relay 12v 200 ohm
load-dump
airbag temic
telefunken IC flasher
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IR s27
Abstract: infrared led receiver s28 transistor s46 IR s28 transistor s19 infrared remote switch infrared led receiver transistor s49 TRANSISTOR S28 s16 transistor
Text: Infrared Remote Controller HT48RA0-5 Integrated Oscillator and NMOS Driver Characteristics Fully integrated system oscillator and N-MOSFET driver. No need for external resonator, 2 capacitors and transistor, increasing product competitive advantages. Adjustable programming - suitable for different remote code formats.
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HT48RA0-5
HT622x)
HT48RA0-5
20SSOP)
IR s27
infrared led receiver s28
transistor s46
IR s28
transistor s19
infrared remote switch
infrared led receiver
transistor s49
TRANSISTOR S28
s16 transistor
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Untitled
Abstract: No abstract text available
Text: R1 2 0 2 x SERI ES STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION NO.EA-255-120518 OUTLINE The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current. Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage
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EA-255-120518
R1202x
Room403,
Room109,
10F-1,
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LT3468
Abstract: LT3468-1 LTC2903A LTC2903-A1 LTC2903B LTC2903C LTC2923 pMOS transistor
Text: DESIGN FEATURES Low Voltage Wizardry Provides the Ultimate Power-On Reset Circuit by Bob Jurgilewicz The Low Voltage Reset Problem VRST VIN Figure 2. Traditional NMOS pull-down circuit 14 5V 3.3V DC/DC CONVERTER 2.5V 1.8V SYSTEM LOGIC C1 0.1µF C2 0.1µF LTC2903B-2
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LTC2903B-2
LTC2903B
100ket
LTC2903
LT3468
LT3468-1
LTC2903A
LTC2903-A1
LTC2903C
LTC2923
pMOS transistor
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transistor A7
Abstract: HM5116100 HM534251B HM538123B HM62256 HM658512A low vce transistor hitachi eprom Hitachi DSA00503 Hitachi HM62256
Text: Application 1. Static RAM 1.1 Static RAM Memory Cell A memory cell used in Hitachi static RAM consists of 4 NMOS transistors and 2 load resistors as shown in Figure 1-1. The data in the cell can be retained as long as power is supplied, and read out without being
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Untitled
Abstract: No abstract text available
Text: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 www.ti.com SLVSAI3 – SEPTEMBER 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection Check for Samples: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 FEATURES 1 • • 2 • • • • • • •
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TPS73601-Q1,
TPS73625-Q1,
TPS73633-Q1
400mA
30mVRMS
100kHz)
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80C286
Abstract: 80C86 80C88 82C37A 82C82 CP82C37A-5 CS82C37A-5 IP82C37A-5 IS82C37A-5 NSC800
Text: 82C37A CMOS High Performance Programmable DMA Controller March 1997 Features Description • Compatible with the NMOS 8237A The 82C37A is an enhanced version of the industry standard 8237A Direct Memory Access DMA controller, fabricated using Intersil’s advanced 2 micron CMOS process. Pin
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82C37A
82C37A
25MBytes/sec
80C286
80C86
80C88
82C82
CP82C37A-5
CS82C37A-5
IP82C37A-5
IS82C37A-5
NSC800
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marking 1P sot-23
Abstract: TPS73601-Q1 ptwq
Text: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 www.ti.com SLVSAI3 – SEPTEMBER 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection Check for Samples: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 FEATURES 1 • • 2 • • • • • • •
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TPS73601-Q1,
TPS73625-Q1,
TPS73633-Q1
400mA
30mVRMS
100kHz)
marking 1P sot-23
TPS73601-Q1
ptwq
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TPS73618-EP
Abstract: No abstract text available
Text: TPS736xx-Q1 www.ti.com SLVSC36 – JUNE 2013 Capacitance-Free NMOS 400-mA Low-Dropout Regulator Check for Samples: TPS736xx-Q1 • • • 2 • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPS736xx-Q1
SLVSC36
400-mA
AEC-Q100
TPS73618-EP
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Untitled
Abstract: No abstract text available
Text: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 www.ti.com SLVSAI3 – SEPTEMBER 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection Check for Samples: TPS73601-Q1, TPS73625-Q1, TPS73633-Q1 FEATURES 1 • • 2 • • • • • • •
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TPS73601-Q1,
TPS73625-Q1,
TPS73633-Q1
400mA
30mVRMS
100kHz)
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TPS73618-EP
Abstract: No abstract text available
Text: TPS736xx-Q1 www.ti.com SLVSC36 – JUNE 2013 Capacitance-Free NMOS 400-mA Low-Dropout Regulator Check for Samples: TPS736xx-Q1 • • • 2 • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPS736xx-Q1
SLVSC36
400-mA
AEC-Q100
TPS73618-EP
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TPS73618-EP
Abstract: No abstract text available
Text: TPS736xx-Q1 www.ti.com SLVSC36 – JUNE 2013 Capacitance-Free NMOS 400-mA Low-Dropout Regulator Check for Samples: TPS736xx-Q1 • • • 2 • • • • • • • • • • Qualified for Automotive Applications AEC-Q100 Qualified With the Following
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TPS736xx-Q1
SLVSC36
400-mA
AEC-Q100
TPS73618-EP
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Untitled
Abstract: No abstract text available
Text: R5 5 2 8 Z SERI ES Overvoltage Protector IC with Reverse Current Protection NO.EA-313-130513 OUTLINE The R5528Z001A is a CMOS-based overvoltage protector IC with reverse current protection that use an NMOS pass transistor to achieve ultra-low on resistance Typ. 54mΩ . Overvoltage protection threshold is as high as
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EA-313-130513
R5528Z001A
Room403,
Room109,
10F-1,
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TPS73618-EP
Abstract: TPS73615-EP TPS73630-EP TPS73632-EP
Text: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor
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TPS736xx
SBVS038T
400mA
30mVRMS
100kHz)
TPS73618-EP
TPS73615-EP
TPS73630-EP
TPS73632-EP
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transistor FGW
Abstract: MB81257 MBB1257-12-W
Text: 3749762~FUJITSU* MI CRÛ £ LECTRON ICS FUJITSU MICROELECTRONICS 7Û 78c 02847 D E | 374^7^2 Q0DEÛ47 7 | FUJITSU M OS M em ories • M B 8 1 2 5 7 -1 2 -W , M B 8 1 2 5 7 -1 5 -W NMOS 262,144-Bit Dynamic Random Access Memory With Nibble Mode Description The Fujitsu MB81257-W Is a fully decoded, dynamic NMOS ran
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144-Bit
MB81257-W
MB81257W
MB81257-12-W
MBB1257-15-W
LCC-18C-A06
16PLCS)
transistor FGW
MB81257
MBB1257-12-W
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Y423
Abstract: 81256
Text: FU J I T S ^ M I C R O E lT c T r ' o N I C S 7 fi D Ë J 37 M T 7 t.S 0005031 3 M O S M e m o rie s • M B 8 1 2 5 6 - 1 2 - W , y^.^3 .^- F U J IT S U M B 8 1 2 5 6 - 1 5 - W NMOS 262,144-Bit Dynamic Random Access Memory D e s c rip tio n The Fujitsu MB81256-W is a fully decoded, dynamic NMOS ran
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144-Bit
MB81256-W
512-bits
MBR1256-W
MB81256-12-W
MB81256-1S-W
Y423
81256
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multiplier ttl
Abstract: No abstract text available
Text: RFP2N18L RFP2N20L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L2FET Package Features T O -2 2 0 A B TOP VIEW • 2A, 180V and 200V • rDS(0N) = 3 .5 « DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits
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RFP2N18L
RFP2N20L
RFP2N20L
92CS-36050
multiplier ttl
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4n05l
Abstract: FP4N05L
Text: RFP4N05L RFP4N06L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L^FET Package Features • 4A, 50V and 60V T O -2 2 0 A B TOP VIEW • 'D S iO N ) = ° - 8 f i DRAIN (FLANGE) • Design Optimized for 5V Gate Drives • Can be Driven Directly from QMOS, NMOS, TTL Circuits
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RFP4N05L
RFP4N06L
RFP4N06L
RFP4N05L,
AN7254
AN-7260.
4n05l
FP4N05L
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 7 ft D e J 37^ 7^5 O Q Q a W l | T"VC'2 2 ^ T Advanced Inform ation FU JITSU MOS Memories MB811001-12, MB811001-15 1,048,576-Bit Dynamic Random Access Memory Description The Fujitsu MB811001 is a fully decoded, dynamic NMOS random
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MB811001-12,
MB811001-15
576-Bit
MB811001
MB811001-12
37MT7L
DIP-18C-A01)
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65SC22
Abstract: tns-3 G65SC22-2 LSHA G65SC22 G65SC22-1 G65SC22-3 G65SC22-4 G65SC22-6 GS5SC22
Text: 5 G 2 -7 < cP - A G65SC22 CMD Microcircuits CMOS Versatile Interface Adapter With Interval Tim er/Counters Features • CMOS process technology for low power consumption • Fully compatible with NMOS 6522 devices • Low power consumption allows battery-powered operation
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G65SC22
16-bit
40-pin
44-pin
65SC22
tns-3
G65SC22-2
LSHA
G65SC22
G65SC22-1
G65SC22-3
G65SC22-4
G65SC22-6
GS5SC22
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Z80-CTC
Abstract: Z0843004
Text: ^ 2 LG b Product Specification Z8430/Z84C30 NMOS/CMOS Z80 CTC Counter/Timer Circuit FEATURES • Four independently program m able counter/tim er channels, each with a readable downcounter and a selectable 16 or 256 prescaler. Downcounters are reloaded automatically at zero count.
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Z8430/Z84C30
Z0843004
Z84C3006
Z84C3008
Z80-CTC
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hitachi eprom
Abstract: HMCS6800
Text: • APPLICATION 1. Static RAM tc o tt time for chip select to data retention : The 1.1. Static RAM Memory Cell The static RAM memory cell consists of flip-flops organized as 4 NMOS transistors and 2 load resistors as shown in figure 1-1. The data in the cell can be
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