85-U25A
Abstract: U25-A RF connector U25A 800nm
Text: NIR-MX800-LN-05-PD-P-P INTENSITY MODULATOR SPECIFICATIONS ELECTRICAL NIR-MX800-LN-05 electro-optic bandwidth S21 @-3 dB NIR-MX800-LN-05 Vp RF electrodes @ 50kHz NIR-MX800-LN-05 electrical return loss S11 0-10 GHz
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NIR-MX800-LN-05-PD-P-P
NIR-MX800-LN-05
50kHz
85-U25A
28dBm
10dBm
nir-mx800
U25-A
RF connector
U25A
800nm
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Untitled
Abstract: No abstract text available
Text: Compact NIR Photoluminescence Lifetime Spectrometer C12132 Series For measuring photoluminescence PL lifetime of PV materials The compact NIR photoluminescence lifetime spectrometer C12132 series is designed for measuring photoluminescence (PL) spectrum and PL lifetime in the NIR region.
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C12132
Measuring10
B1201
SDSS0015E06
OCT/2014
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PC176TSCE005
Abstract: A8996 pmt divider circuit R5509-43 IC 741 light switch AC Photonics nir source R5509-73 gas solenoid valve control valve response time
Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4µm/1.7µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-43/R5509-73 OF NIR and EXCLUSIVE COOLERS OVER VIEW FEATURES Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R550943 and -73 have photocathodes with extended spectral response
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R5509-43/R5509-73
R550943
R5509-43
R5509-73
SE-171-41
TPMH1284E03
PC176TSCE005
A8996
pmt divider circuit
IC 741 light switch
AC Photonics
nir source
gas solenoid valve
control valve response time
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Untitled
Abstract: No abstract text available
Text: NIR NEAR INFRARED PHOTOMULTIPLIER TUBES R5509-42,-72 PATENT PENDING For NIR (to 1.4 µm, to 1.7 µm) Fast time response, High sensitivity Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-42 and -72 have newly developed photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm
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R5509-42
S-164-40
TPMH1185E02
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NIR-MPX-800-LN-10
Abstract: corning phase modulator RF50 port data NIR-MPX800
Text: NIR-MPX800 series 800 nm region Phase Modulators Modulator The NIR-MPX800 series are modulators especially designed to operate in the 800 nm wavelength region. They are available with various modulation bandwidth, from low frequency to 10 GHz and above. Features
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NIR-MPX800
NIR-MPX800-LN-0
PT-Q1-2010
NIR-MPX-800-LN-10
corning phase modulator
RF50 port data
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transistor C3866
Abstract: C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit
Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4µm/1.7µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS APPLICATION EXAMPLE: Photoluminescence measurement Sample 1 SAMPLE TEMPERATURE Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)
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R5509-42/R5509-72
SE-171-41
TPMH1267E02
transistor C3866
C3866
C3866* transistor
c3866 transistor
C3866 FE
M7824
FE P C3866
FE P C3866 17
R5509-42
pmt divider circuit
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nir source
Abstract: No abstract text available
Text: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)
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SSO-AD-230
NIR-TO52-S1
nir source
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UBR10000
Abstract: nir source
Text: SSO-AD-230 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 active area 1) 0,042 mm ∅ 230 µm
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SSO-AD-230
NIR-TO52
905nm
655nm
UBR10000
nir source
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apd 400- 700 nm
Abstract: No abstract text available
Text: SSO-AD-500 NIR-TO52 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package 2 TO52 : 2 Active area 1) 0,196 mm ∅ 500 µm
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SSO-AD-500
NIR-TO52
apd 400- 700 nm
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NIR-MPX800
Abstract: corning phase modulator corning optical phase modulator LiNbO3 phase modulator
Text: NIR-MPX800 800 nm Phase Modulator DESCRIPTION The NIR-LN modulators series is specially designed for operation in the Near InfraRed region; it offers to the engineers of emerging applications a choice of modulation devices comparable to what exists for the telecommunications and with bandwidths up to above
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NIR-MPX800
85-U25A
NIR-MPX800-LN-XX-P-P-AB-CD
corning phase modulator
corning optical phase modulator
LiNbO3 phase modulator
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laser 790 nm
Abstract: LiNbO3 phase modulator U25-A NIR-MPX800
Text: NIR-MPX800 800 nm Phase Modulator DESCRIPTION The NIR-LN modulators series is specially designed for operation in the Near InfraRed region; it offers to the engineers of emerging applications a choice of modulation devices comparable to what exists for the telecommunications and with bandwidths up to above
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NIR-MPX800
85-U25A
NIR-MPX800-LN-XX-P-P-AB-CD
laser 790 nm
LiNbO3 phase modulator
U25-A
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nir source
Abstract: apd 400- 700 nm
Text: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm
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SSO-AD-500
NIR-TO52-S1
nir source
apd 400- 700 nm
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UV diode 250 nm
Abstract: UV light lens detector nir source nitrogen coupling UV diode datasheet UV led diode 200 nm deuterium lamp deuterium lamp circuit IR fiber optical fiber free book
Text: UV-NIR LARGE CORE OPTICAL FIBERS 100 90 80 TRANSMITTANCE % VIS/NIR 70 UV/VIS 60 (10m LENGTH) 50 40 30 20 10 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 WAVELENGTH (nm) Single fiber at the input of FICS 1/8 m Spectrograph; LineSpec™ CCD is at the output.
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00/meter,
UV diode 250 nm
UV light lens detector
nir source
nitrogen coupling
UV diode datasheet
UV led diode 200 nm
deuterium lamp
deuterium lamp circuit
IR fiber
optical fiber free book
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850 nm NIR LED
Abstract: 870nm nir leds
Text: ENFIS QUATTRO Mini Array NIR 870nm The latest in ultra bright, chip on board, LED lattice arrays. Compact, single colour spot source. Features Mounted array for simple incorporation High power useable light Inbuilt monitoring / control • Array mounted on connectorized PCB
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870nm
870nm
SA18PJ,
850 nm NIR LED
nir leds
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850 nm LED
Abstract: 5 mm 850 nm LED 850 nm NIR LED
Text: Selective Photodiode EPD850-5/0.5 Wavelength range Type Technology Case NIR Integrated filter AlGaAs/GaAs 5 mm plastic lens Description Narrow response range 850 nm peak Heterostructure with integrated filter Applications Optical communications, safety equipment,
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EPD850-5/0
D-12555
850 nm LED
5 mm 850 nm LED
850 nm NIR LED
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870nm
Abstract: Infrared Security System 50W LED infrared
Text: ENFIS UNO Plus Array Infra-Red NIR 870nm Smart, powerful, compact, efficient, reliable light Features & Benefits Outline Specification • • • • • • • • • Intense, high-power Infra-Red spot source Ultra-high power density Long-life and reliable, high-performance
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870nm
5000mW
15cm2
4348mW/cm2
870nm
SA18PJ,
Infrared Security System
50W LED
infrared
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S11830-3344MF
Abstract: No abstract text available
Text: NEWS 01 2011 Solid state PRODUCTS PAGE 11 Thumb-sized “ultra-compact spectrometer” with VIS-NIR response SOLID STATE PRODUCTS PAGE 16 New developments for the MPPC ELECTRON TUBE PRODUCTS PAGE 21 H2D2 light sources L11788 series, L11789 series SYSTEMS PRODUCTS
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L11788
L11789
C11367
DE128228814
S11830-3344MF
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Untitled
Abstract: No abstract text available
Text: REV - DESCRIPTION NIR-52400 Preliminary Release DATE 2/6/2014 PREP APPD VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY Oscillator Specification, Hybrid Clock QUALITY Hi-Rel Standard, High Frequency CMOS ENGINEERING CODE IDENT NO SIZE
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NIR-52400
DOC204900
Mil-Std-981
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77058
Abstract: 71893 Ge detector oriel 71898 oriel Oriel Instruments
Text: Ge 0.6 0.4 InGaAs 0.2 0.0 800 1000 1200 1400 1600 1800 Photolithography TYPICAL RESPONSIVITY A/W 0.8 Light Sources InGaAs AND GE DETECTORS DETECTORS AND APPLICATIONS This family of InGaAs and Ge detectors covers the most frequent 0.7 - 2.5 µm NIR measurement areas for these
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epd-740-5
Abstract: IR LED 780 nm
Text: Selective Photodiode EPD-740-5/0,5 Spectral range Type Technology Case NIR waterclear AlGaAs/GaAs 5 mm plastic lens Description Applications Narrow response range 740 nm peak , Heterostructure with integrated filter Optical communications, safety equipment, automation, analytics
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EPD-740-5/0
D-12555
epd-740-5
IR LED 780 nm
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Untitled
Abstract: No abstract text available
Text: DATASHEET Lighting Solutions RSL-3100 Miniature Xenon Flashlamp System Key Features E RSL-3100 miniature pulsed Xenon light source for UV-VIS-NIR applications. The RSL-3100 is one of the smallest pulsed Xenon sources on the market today. The compact, low cost RSL-3100 light source from Excelitas
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RSL-3100
RSL-3100
RSL-2100
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ortec 457
Abstract: tennelec gas solenoid valve R3809U irf 539 tektronix 454 tennelec tc-454 ortec ortec 454 c4840
Text: NEAR INFRARED MICROCHANNEL PLATEPHOTOMULTIPLIER TUBE WITH COOLER R3809U-68/-69 WITH C10221 Compact NIR MCP-PMT Series Featuring with Fast Time Response FEATURES ●High Speed Rise Time: 170 ps Typ. TTS (Transit Time Spread): 100 ps (FWHM) A ●Compact Profile
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R3809U-68/-69
C10221
LR3809U-68/-69
TPMHF0499
LC10221
TACCF0194
TPMOB0198EA
SE-171-41
TPMH1293E03
ortec 457
tennelec
gas solenoid valve
R3809U
irf 539
tektronix 454
tennelec tc-454
ortec
ortec 454
c4840
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DOC203982
Abstract: No abstract text available
Text: REV A DESCRIPTION DATE 8/8/12 DESIGN: NIR-45542 PREP SC APPD GAB DPA Specification Includes exceptions to MIL-STD-1580 MOUNT HOLLY SPRINGS, PA 17065 THE RECORD OF APPROVAL FOR THIS DOCUMENT IS MAINTAINED ELECTRONICALLY WITHIN THE ERP SYSTEM CODE IDENT NO SIZE
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NIR-45542
MIL-STD-1580
DOC203982
MIL-PRF-55310-compliant,
QA07009
MIL-STD-1580
DOC203982
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G7233-256
Abstract: G7230-256 S7233 Hamamatsu photodiode 256 elements InGaAs photodiode array chip InGaAs PIN photodiode Long Wavelength 2.6 phct C7221 G7230-128 G7231-128
Text: InGaAs LINEAR IMAGE SENSORS G7230/G7231/G7233 SERIES HAMAMATSU PRELIMINARY DATA Oct. 1997 NIR applications 0.9 to 1.7 |jm/1.2 to 2.6 pm FEATURES • Spectral response range G7230/G7231 series: 0.9 to 1.7 pm G7233 series: 1.2 to 2.6 pm • G7231/G7233 series:
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G7230/G7231
/G7233
G7233
G7231/G7233
i49i06162-3750.
44i0181-367-3560
S-164
46I08-750-5895
KMIR1006E03
G7233-256
G7230-256
S7233
Hamamatsu photodiode 256 elements
InGaAs photodiode array chip
InGaAs PIN photodiode Long Wavelength 2.6
phct
C7221
G7230-128
G7231-128
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