NF MARKING TRANSISTOR Search Results

NF MARKING TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
54F139/BEA	Rochester Electronics LLC	54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA)
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)
54F151/BFA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA)
54F157/BEA	Rochester Electronics LLC	Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA)
54F153/BEA	Rochester Electronics LLC	54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA)

NF MARKING TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MARKING SY SOT23 Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG	Original	PDF	OT-23 2SA1162 2SC2712. -100mA -10mA MARKING SY SOT23 MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Untitled Abstract: No abstract text available Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF = 1.5dB typ. (@f=1GHz) • High Gain: \|S21e\| = 10.5dB (typ.) (@f=1GHz) 2 Marking	Original	PDF	MT3S22P SC-62
MMBT6428 Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088 Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087	Original	PDF	MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 MMBT5086 MMBT6428 mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG	Original	PDF	OT-23 2SA1162 2SC2712. -100mA -10mA
Untitled Abstract: No abstract text available Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES High transition frequency. Small rbb’•Cc and high gain. *Small NF. 2 MARKING 1 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER	Original	PDF	2SC3838 OT-23 QW-R206-052
MT3S46T Abstract: No abstract text available Text: MT3S46T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S46T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.2dB @f=2GHz · High Gain:\|S21e\| =11.5dB (@f=2GHz) 2 Marking 3 R5 1 2 TESM	Original	PDF	MT3S46T MT3S46T
MT4S101T Abstract: No abstract text available Text: MT4S101T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S101T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.8dB @f=2GHz • High Gain:\|S21e\| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking	Original	PDF	MT4S101T MT4S101T
Untitled Abstract: No abstract text available Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES High transition frequency. Small rbb’•Cc and high gain. Small NF. 2 MARKING 1 3 AD SOT-23 1: EMITTER 2: BASE 3: COLLECTOR Pb-free plating product number: 2SC3838L	Original	PDF	2SC3838 OT-23 2SC3838L QW-R206-052
Untitled Abstract: No abstract text available Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: \|S21e\|2=10.5dB(Typ.) (@f=1GHz) Marking PW-Mini	Original	PDF	MT3S22P SC-62
MT4S100T Abstract: No abstract text available Text: MT4S100T TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S100T TENTATIVE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES 1.2±0.05 Low Noise Figure :NF=0.72dB @f=2GHz • High Gain:\|S21e\| =17.0dB (@f=2GHz) 0.9±0.05 2 1 1.2±0.05 Marking	Original	PDF	MT4S100T MT4S100T
Untitled Abstract: No abstract text available Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB typ. (@f=1GHz) • High Gain: \|S21e\| =11dB (typ.) (@f=1GHz) 2 Marking M U	Original	PDF	MT3S20P SC-62
Untitled Abstract: No abstract text available Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: \|S21e\|2=11dB(Typ.) (@f=1GHz) Marking PW-Mini	Original	PDF	MT3S20P SC-62
marking AD Abstract: No abstract text available Text: UTC 2SC3838 NPN EPITAXIAL PLANAR TRANSISTOR High-Frequency Amplifier Transistor FEATURES High transition frequency. Small rbb’•Cc and high gain. *Small NF. 2 1 MARKING 3 AD SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER	Original	PDF	2SC3838 OT-23 500MHz 500MHz, QW-R206-052 marking AD
Untitled Abstract: No abstract text available Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:\|S21e\| =12 dB (typ.) (@ f=1 GHz) 2 Marking	Original	PDF	MT3S111 O-236 SC-59

MT3S20P Abstract: No abstract text available Text: MT3S20P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.45dB Typ. (@f=1GHz) • High Gain: \|S21e\|2=11dB(Typ.) (@f=1GHz) Marking M U PW-Mini	Original	PDF	MT3S20P SC-62 MT3S20P
mt3s111 Abstract: No abstract text available Text: MT3S111 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Unit: mm Features • Low-Noise Figure: NF=0.9 dB typ. (@ f=1 GHz) • High Gain:\|S21e\|2=12 dB (typ.) (@ f=1 GHz) Marking	Original	PDF	MT3S111 O-236 SC-59 mt3s111
2SA1162 Abstract: 2SC2712 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG	Original	PDF	OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712
MT3S22P Abstract: No abstract text available Text: MT3S22P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S22P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure: NF=1.5dB Typ. (@f=1GHz) • High Gain: \|S21e\|2=10.5dB(Typ.) (@f=1GHz) Marking T 5 PW-Mini	Original	PDF	MT3S22P SC-62 MT3S22P
MT3S150P Abstract: TOSHIBA MICROWAVE AMPLIFIER Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1GHz • High Gain: \|S21e\| =11.5dB (@f=1GHz) 2 Marking ＭＰ Maximum Ratings (Ta = 25°C)	Original	PDF	MT3S150P MT3S150P TOSHIBA MICROWAVE AMPLIFIER
Untitled Abstract: No abstract text available Text: MT3S150P TOSHIBA Transistor GaAs NPN Epitaxial Mesa Type MT3S150P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low Noise Figure: NF=0.95dB @f=1 GHz • High Gain: \|S21e\|2=11.5dB (@f=1 GHz) Marking ＭＰ Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	MT3S150P SC-62
Untitled Abstract: No abstract text available Text: MT3S21P TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S21P VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm FEATURES • Low-Noise Figure: NF=1.55 dB typ. (@f=1 GHz) • High Gain: \|S21e\|2=11 dB (typ.) (@f=1 GHz) Marking T 2 PW-Mini	Original	PDF	MT3S21P SC-62
MT3S36T Abstract: No abstract text available Text: MT3S36T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE MT3S36T VCO OSCILLETOR STAGE UHF LOW NOISE AMPLIFIER APPLICATION Unit: mm FEATURES • Low Noise Figure :NF=1.3dB @f=2GHz · High Gain:\|S21e\| =12.5dB (@f=2GHz) 2 Marking 3 Q3 1 2 TESM Maximum Ratings (Ta = 25°C)	Original	PDF	MT3S36T 0022g MT3S36T
16 SOT-143 MOTOROLA Abstract: No abstract text available Text: SOT-143 Devices Maximum die size 25 mil x 25 mil CASE318A-05 RF Transistors Maximum Ratings Galn-Bandwidth NF @ <§ Device MRFS211LT1 <17> MRF9331LT1 MRF9011LT1 MRF9411LT1 MRF9411BLT1 MRF9511LT1 MRF0211LT1 MRF5711LT1 f Gain @ f Marking h Typ GHz •c mA Typ	OCR Scan	PDF	OT-143 CASE318A-05 MRFS211LT1 MRF9331LT1 MRF9011LT1 MRF9411LT1 MRF9411BLT1 MRF9511LT1 MRF0211LT1 MRF5711LT1 16 SOT-143 MOTOROLA
N-Channel JFET FETs Abstract: P-Channel RF Amplifier jfets MMBF5457LT1 MMBF5484LT1 Text: SOT-23 TRANSISTORS continued Unipolar (Field Effect) Transistors (JFETs) RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1-Drain, 2-Source, 3-Gate NF Device Y»s @ V ds Marking dB Typ	OCR Scan	PDF	OT-23 MMBFJ309LT1 MMBFJ310LT1 MMBFU310LT1 MMBF4416LT1 MMBF5484LT1 MMBFS486LT1 MMBF48S6LT1 MMBF4391LT1 MMBF4860LT1 N-Channel JFET FETs P-Channel RF Amplifier jfets MMBF5457LT1

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NF MARKING TRANSISTOR Search Results

NF MARKING TRANSISTOR Result Highlights (5)

NF MARKING TRANSISTOR Datasheets Context Search

MARKING SY SOT23

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MMBT6428

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MT3S46T

MT4S101T

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MT4S100T

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marking AD

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MT3S20P

mt3s111

2SA1162

MT3S22P

MT3S150P

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MT3S36T

16 SOT-143 MOTOROLA

N-Channel JFET FETs