2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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Untitled
Abstract: No abstract text available
Text: five 10 1992 NEC JJPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Preliminary Description T he ^PD434000 is a 524,288-w ord by 8-bit static RAM fab ricated with advanced silicon-gate technology.
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JJPD434000
PD434000
288-w
32-pin
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upd431000a
Abstract: No abstract text available
Text: NEC fiPD431000A 131,072 x 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /JPD431000A is a 131,072-word by 8-bit static RAM fabricated with advanced siiicon-gate technology. CMOS peripheral circuits and N-channel memory cells
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uPD431000A
/JPD431000A
072-word
32-pin
-s7478
fiPD431000A
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d431000acz
Abstract: d431000a D431000ACZ-70 00OACZ-7OLL d431000ac d431000acz-70l
Text: NEC JJPD431000A 131,072 x 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The /JPD431000A is a 131,072-word by 8-bit static RAM fabricated with advanced silicon-gate technology. CMOS peripheral circuits and N-channel memory cells
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uPD431000A
/JPD431000A
072-word
/PD431000A
pPD431000A
32-pin
fiPD431000A
d431000acz
d431000a
D431000ACZ-70
00OACZ-7OLL
d431000ac
d431000acz-70l
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UPD79
Abstract: No abstract text available
Text: NEC ELECTRONICS INC ~ Tfl D l f | t,427525 DDlflDMfl L | ~ j~ ~ y / L £ s ' //PD791 4 0 9 6 -B IT CCD im a g e s e n s o r NEC Electronics Inc. PRELIMINARY INFORMATION Pin Configuration Description T h e fiP D 791 is a C C D c h a rg e-co u p le d device linear
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uPD791
4096-BIT
//PD791
UPD79
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PD43256A
Abstract: D43256AG 43256ac D43256A C-15LL D43256 upd43256a
Text: NEC ffPD43256A 32,768 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The #iPD43256A is a 32,768-word by 6 -bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to make
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uPD43256A
83IH-6258A
iPD43256A
768-word
pPD43256A
JJPD43256A
83IH-6438B
ffPD43256A
JIPD43256A
PD43256A
D43256AG
43256ac
D43256A
C-15LL
D43256
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D43256B
Abstract: D43256
Text: NEC JHPD43256B 32,768 x 8-Bit Static CMOS RAM NEC Electronics Inc. Description Pin Configurations The f j PD43256B is a 32,768-word by 8-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells with polysilicon resistors to
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uPD43256B
28-Pin
PD43256B
768-word
pPD43256B
iPD43256B
32-pin
83IH-6306A
D43256B
D43256
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UPD4361
Abstract: PD4361K-40
Text: NEC /¿PD4361 6 5 ,5 3 6 x 1-B IT STATIC CMOS RAM NEC Electronics Inc. Description Pin Configurations The ;uPD4361 is a 65,536-word by 1-bit static random access memory fabricated with advanced silicon-gate technology. Its unique circuitry, using C M O S peri
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uPD4361
536-word
the//PD4361
300-mil-wide,
22-pin
290-mil
490-mil,
PD4361
PD4361K-40
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PD431000
Abstract: uPD431000
Text: N E C ELECTRONICS INC 36E bHS7SSS ]> 003213^ NEC 2 I NECE pPD431000 131,072 X 8-Bit Static CMOS RAM NEC Electronics Inc. T ~ W r r 3 ;3 .- lH r Description Pin Configuration the /*PD431Q00 Is a 131,072-word by 8-bit static RAM fabricated with advanced sillcon-gate technology.
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uPD431000
PD431Q00
072-word
PD431000
pPD43l000
32-pln
32-Pin
L42752S
DG32147
iPD431000
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d449c
Abstract: PD449 pd4493 449C
Text: mPD449 2 ,0 48 X 8-BIT STATIC CMOS RAM NEC NEC Electronics Inc. Revision 4 Description Pin Configuration The ^PD449 is a high-speed, tow-power, 2048-word by 8b it s ta tic CMOS RAM fabricated w ith advanced silicongate CMOS technology. A unique c ircu itry technique
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uPD449
2048-word
nPD449
fiPD449
24-pin
PD449
d449c
pd4493
449C
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MC-434000
Abstract: No abstract text available
Text: NEC MC-434000 524,288 x 8-Bit Static CMOS RAM Module NEC Electronics Inc. Advance Information Description Pin Configuration The MC-434000 is a high-density 4M static RAM module with four 128K x 8-bit SRAMs and one decoder circuit. The module is compatible with the future 4M monolithic
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MC-434000
I/02C
MC-434000
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upd434000
Abstract: D434000GW-55L
Text: NEC JUPD434000 524,288 X 8-Bit Static CMOS RAM NEC Electronics Inc. Description 524,288-w ord by 8-bit organization Single + 5 -v o lt pow er supply Fully static o peration — no clock or refreshing T TL -com patible inputs and outputs Com m on I/O using three-state outputs
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uPD434000
/VPD434000
288-w
/JPD434000
32-pin
pPD434000
63FM-8622A
JUPD434000
JHPD434000
D434000GW-55L
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dg1u
Abstract: PD3520 fujinon F0.85 fujinon tc 9310n CF25L nec 14 tv diagram B423G MC-5573 DX485
Text: _ 6427525 N E C N E C ELECTRONICS ELECTRONICS INC INC 98D 18072 Tß DE J LM2752S □01flD?a 3 NEC NEC Electronics Inc. A D VA N C E PRO D U C T IN FO R M A TIO N DATA S H E E T 7^f/-SS D N o vem b er 1 9 8 6 yuPD3 5 2 0 D CCD, Single-Board Color Image Sensor
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LM2752S
01flD
dg1u
PD3520
fujinon F0.85
fujinon
tc 9310n
CF25L
nec 14 tv diagram
B423G
MC-5573
DX485
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nec 444 ram
Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Text: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there
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uPD444
uPD444-1
uPD444-2
uPD444-3
/LfPD444
/jPD444
LM27S2S
//PD42S18160,
nec 444 ram
PD2114L
PD444C
MPD444C
2SO 765
PD42S18160
pd2114
MPD444
nec chic
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FZL 101
Abstract: CC78K0S RA78K0S
Text: NEC Z L — t f — X • 7 8 K / 0 S - ? — > £HI S MX78K0S ÿ Î f Ê ' T / W X 78K/0S V U — X jt$ 4 ii- § U12938JJ1V0UM00 f | 1 j& September 1997 NS NEC C o rp o ra tio n 1997 z l T 'J — ) I s O S soi. M -m W ik - ¿6 68 - Z8 — SSf^SSÛJSO
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MX78K0S
U12938JJ1V0UM00
FZL 101
CC78K0S
RA78K0S
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d4364
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. //P D 4 3 6 4 8 1 9 2 X 8 -B IT STATIC M IX -M O S RAM Decem b er 1987 D escription Pin C o n fig u ratio n The/L/PD4364 is a high-speed, 8192-word by 8-bit static RAM fabricated w ith advanced silicon -ga te MIX-MOS tech nolog y. Its unique c ircu itry, using N-channel
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The/L/PD4364
8192-word
uPD4364
d4364
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY NEC / ELECTRON DEVICE MOS INTEGRATED CIRCUIT / //PD3742 fc 1 760-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT The pPD3742 is a 1760-bit high sensitivity CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal.
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uPD3742
760-BIT
pPD3742
1760-bit
pPD35H73)
b457S25
b427S25
0G51712
bM27525
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NEC k 1760
Abstract: IC-2915 nec CCD LINEAR SENSOR 22-pin UPD3732
Text: DATA SH EET NEC MOS INTEGRATED CIRCUIT |iPD3732 ELECTRON DEVICE 1760-BIT CCD LINEAR IMAGE SEN SO R WITH PERIPHERAL CIRCUIT The //PD3732 is a 1760-bit high sensitivity CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal.
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uPD3732
1760-BIT
//PD3732
jiPD3732
iPD3732
NEC k 1760
IC-2915
nec CCD LINEAR SENSOR 22-pin
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5000-bit
Abstract: uPD3735 PD3571
Text: NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿tPD3735, 3735A 5000-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT The ¿iPD3735 3735A is a 5000-bit high sensitivity CCD (Charge Coupled Device) linear im age sensor which changes optical im ages to electrical signal.
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uPD3735
uPD3735A
5000-BIT
iPD3735
pPD3735
pPD3735
/iPD3735A)
IEl-1207)
PD3571
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uPD3594
Abstract: upd3
Text: DATA SHEET NEC MOS INTEGRATED CIRCUII IIP D 3 5 9 ' ELECTRON DEVICE 2 592-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUITS The /xPD3594 is a 2592-bit high sensitivity CCD {Charge Coupled Device linear image sensor which changes optical images to electrical signal.
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592-BIT
uPD3594
2592-bit
tPD3594
/iPD406B
2SC945
upd3
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interline
Abstract: 510H MN5179H QFH048-P-0707
Text: For Video Equipment_ P a n a S O f H C MN5179H 1/3 Type 510H-IT CCD Drive Logic LSI • Overview Pin Assignment This LSI drives a 1/3 type 5 10H interline transfer CCD solid imaging element. It automatically generates the nec
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MN5179H
510H-IT
MN3716
MN3726
tR35flS2
0015S7M
QFH048-P-0707
D15275
interline
510H
MN5179H
QFH048-P-0707
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image sensor sample hold switch
Abstract: nec Color CCD LINEAR IMAGE SENSOR 22-pin PD3732 UPD3732
Text: DATA SHEET NEC ELECTRON DEVICE A M O S INTEGRATED CIRCUIT UPD3732 1760-BIT CCD LINEAR IMAGE SENSOR WITH PERIPHERAL CIRCUIT The ¿»PD3732 is a 1760-bit high sensitivity CCD Charge Coupled Device linear image sensor w hich changes optical im ages to electrical signal.
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UPD3732
1760-BIT
PD3732
J/PD3732
/PD3732
b427525
QD51bb2
image sensor sample hold switch
nec Color CCD LINEAR IMAGE SENSOR 22-pin
UPD3732
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interline
Abstract: MN5179H NTSC test generator V3-19 510H QFH048-P-0707 MN3716
Text: For Video Equipment_ P a n a S O fH C MN5179H 1/3 Type 510H-IT CCD Drive Logic LSI • Overview Pin Assignment This LSI drives a 1/3 type 5 10H interline transfer CCD solid imaging element. It automatically generates the nec
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MN5179H
510H-IT
MN3716
MN3726
0015S7M
QFH048-P-0707
D15275
interline
MN5179H
NTSC test generator
V3-19
510H
QFH048-P-0707
MN3716
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2SC945 Q equivalent
Abstract: No abstract text available
Text: DATA SHEET NEC j f MOS INTEGRATED CIR CU IT juPD35H71 A 500 0 -B IT CCD LINEAR IMAGE SENSOR The /UPD35H71A is a high sensitivity 50 0 0 -b it linear image sensor consisting o f charge coupled devices CCD w hich changes optical images to electrical signal.
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juPD35H71
/UPD35H71A
juPD35H71A
5000-bit
I-1207)
//PD35H71
2SC945 Q equivalent
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