eeprom s130
Abstract: eeprom s190 KVP49 sn 76545 s193 V55-V62 s331 eeprom VRP11 s489 kvp 3b
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PD161608
176-RGB
IC528
S17594JJ2V0DS
eeprom s130
eeprom s190
KVP49
sn 76545
s193
V55-V62
s331 eeprom
VRP11
s489
kvp 3b
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eeprom s190
Abstract: eeprom s130 S507 s331 eeprom Datasheet of 7492 IC 66285 929 rev oh s26 KVP14 KVP18 444-573
Text: データ・シート MOS 集積回路 MOS Integrated Circuit PD161608 262,144 色カラーTFT 液晶対応 176-RGB x 220 ドット 1 チップ・ドライバ μPD161608 は，TFT 液晶対応の表示コントローラ・ドライバ IC です。また，176-RGB x 220 ドットにより 262,144
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PD161608
176-RGB
IC528
PD161608P
S17594JJ2V0DS00
VLCD63
eeprom s190
eeprom s130
S507
s331 eeprom
Datasheet of 7492 IC
66285
929 rev oh s26
KVP14
KVP18
444-573
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lvds to mipi
Abstract: VS6650 mipi camera link bt.656 to MIPI STV0976 Circuit STV0976 RGB-444 MIPI Specification smia camera MIPI display megapixel
Text: MOB-976/650-E01 Evaluation Kit for Megapixel Processor and SMIA Camera Module DATA BRIEF FEATURES • Supports the STV0976 co-processor and VS6650 1.0 Megapixel 1152H x 864V camera module ■ Up to 30 frames per second (fps) operation at SVGA or 15fps at 1.0 Megapixel
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MOB-976/650-E01
STV0976
VS6650
1152H
15fps
lvds to mipi
mipi camera link
bt.656 to MIPI
STV0976 Circuit
RGB-444
MIPI Specification
smia camera
MIPI display megapixel
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430413
Abstract: 300K-600K CMOS-9 equivalent L302 sh micron aerospace
Text: CMOS-9 3.3-VOLT, 0.35-MICRON CMOS GATE ARRAYS NEC Electronics Inc. July 1997 Description Figure 1. CMOS-9 Package Examples; BGA and QFP NEC's CMOS-9 gate array family provides designers with the performance capabilities and features required to develop devices for high-speed computer and
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35-MICRON
35-micron
A12634EU1V0DS00
430413
300K-600K
CMOS-9 equivalent
L302
sh micron aerospace
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NZ70008H
Abstract: STEPS 30175 STR 6755 k2736 NZ70 NEC V30MX V30MX nec 2508 nec 772 K398
Text: DATA SHEET PRODUCT LETTER CB-C9VX/VM 0.35-Micron CMOS Cell-Based ASICs Description Figure 1: System-Level-Integration The CB-C9VX/VM family offers ultra-high performance, deep submicron cell-based ASICs for high-end applications requiring high speeds, high integration density and low power
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35-Micron
35micron
27-micron
GB-MK14
NZ70008H
STEPS 30175
STR 6755
k2736
NZ70
NEC V30MX
V30MX
nec 2508
nec 772
K398
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uPD654
Abstract: L302 OPENCAD CMOS Block library
Text: EA-C9 3.3-Volt, 0.35-Micron drawn CMOS Embedded Array NEC Electronics Inc. Preliminary March 1997 Description Figure 1. Embedded Array Core Integration NEC’s high-performance 0.35 µm drawn (0.27 µm L-effective) EA-C9 embedded array family offers both
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35-Micron
A12633EU1V0DS00
uPD654
L302
OPENCAD CMOS Block library
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC |jPD461318/36LSl Bi-CMos S y n c h r o n o u s S t a t i c Ram MAR. 1995 Description The nPD461318/36LS1 is a 65,536-word by 18-blt / 32,768-word by 36-blt synchronous static RAM fabricated with advanced BI-CMOS technology using
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uPD461318LSI
uPD461336LSl
nPD461318/36LS1
536-word
18-blt
768-word
36-blt
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nec 444 ram
Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Text: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there
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uPD444
uPD444-1
uPD444-2
uPD444-3
/LfPD444
/jPD444
LM27S2S
//PD42S18160,
nec 444 ram
PD2114L
PD444C
MPD444C
2SO 765
PD42S18160
pd2114
MPD444
nec chic
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UPD444C
Abstract: MPD444C PD444C MPD444 UPD444-1 upd444 nec nec 444 ram nec ram upd444c PD444 ram 2114L
Text: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 b it static RAM orga nized 1024 words by 4 bits. It uses DC stable static circ u itry throug hou t and there
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uPD444
uPD444-1
uPD444-2
uPD444-3
/LfPD444
LM27S2S
001157M
//PD42S18160,
UPD444C
MPD444C
PD444C
MPD444
upd444 nec
nec 444 ram
nec ram upd444c
PD444
ram 2114L
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UPD444
Abstract: UPD444-1 MPD444
Text: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM DESCRIPTION T h e /LfPD444 is a high-speed, lo w p o w e r s ilic o n gate C M OS 4 0 9 6 b it s ta tic R A M o rg a n ize d 1 02 4 w o rd s b y 4 b its . I t uses DC stable s ta tic c ir c u itr y th ro u g h o u t and th e re
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uPD444
uPD444-1
uPD444-2
uPD444-3
/LfPD444
LM27S2S
DCH157M
//PD42S18160,
MPD444
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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4464 ram
Abstract: us4k 74C930 6116 ram 2k 74c920 6508 ram 4464 memory 6164 memory
Text: In d u s try CMOS RAM C ross R eference H A R R IS C M O S R A M s F U J ID E SC RIPTIO N HARR IS AM O EDI rrsu H IT AC H I ID T M ITS U BISHI M OT O R O LA N AT IO N A L 6508 6508 74C 929 6518 6518 74C 930 NEC O KI H A R R IS / RCA TO SH IB A N M O S,
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8816H
4464 ram
us4k
74C930
6116 ram 2k
74c920
6508 ram
4464 memory
6164 memory
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pd424400
Abstract: d424400
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT _ , ü P D 4 2 4 4 0 0 4 M-BIT DYNAMIC RAM 1 M-WORD BY 4-BIT, FAST PAGE MODE Description The /¿PD424400 is a 1,048,576 words by 4 bits CMOS dynamic RAM. The fast page mode capability realizes high speed access and low power consumption.
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uPD424400
26-pin
/iPD424400-60
/XPD424400-70
/xPD424400-80
XPP424400
IR35-207-2
VP15-207-2
bH57SES
pd424400
d424400
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4516DA724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description T h e M C -4 5 1 6 D A 7 2 4 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w hich 18 pie ce s of
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MC-4516DA724
16M-WORD
72-BIT
MC-4516DA724
PD4564441
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, D escription The ¿¿PD42S16165L, 4216165L are 1,048,576 words by 16 bits C M O S dynam ic RA M s with optional EDO.
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16M-BIT
16-BIT,
uPD42S16165L
uPD4216165L
iPD42S16165L
iPD42S16165L,
50-pin
42-pin
IR35-207-3
P15-207-3
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I1244
Abstract: D42S18165 LH 446
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT /¿P D 4 2 S1 8 1 6 5L, 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE Description The ¿¿PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page
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16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L
iiPD42S18165L,
4218165L
50-pin
42-pin
1PD42S18165L-A60,
4218165L-A60
I1244
D42S18165
LH 446
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CMOS-10
Abstract: f-002
Text: CMOS-10 2.5-Volt, 0.25-M icron drawn CMOS G ate Array NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Tape BGA and Chip Size Package Description In CMOS-IO, NEC combines high-performance CMOS technology with an advanced 2.5-volt block library and an
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CMOS-10
IEEE1394
G1GSG77
f-002
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hilti te 24
Abstract: hilti te 17 GO 440 104 esm 433 rac
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 42S18165L , 4 2 1 8 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The .¿/PD42S18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EOO
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42S18165L
16-BIT,
uPD42S18165L
uPD4218165L
/iPD42S18165L,
4218165L
50-pin
42-pin
1R35-207-3
hilti te 24
hilti te 17
GO 440
104 esm 433 rac
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TPS 436 IRA
Abstract: IC-3218B
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
iiPD42S16160Lr
4216160L,
42S18160L,
4218160L
TPS 436 IRA
IC-3218B
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RAC RAMBUS
Abstract: ha 1452 EA-C10
Text: IV IF C “ E A -C 10 2 .5 -V o lt, 0 .2 5 -M ic ro n d ra w n C M O S E m b e d d e d A rra y NEC Electronics Inc. Preliminary March 1997 Figure 1. Embedded Array Core Integration Description The high-speed 0.25|nm drawn (0.18 jxm L-effective) EA-C10 embedded array family offers both support for
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EA-C10
b42752S
RAC RAMBUS
ha 1452
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D78 NEC
Abstract: 986M
Text: CB-C10 2.5-Volt, 0.25-M icron drawn CMOS Cell-Based ASIC NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 n.m drawn (0.18 (j.mL-effective)CB-C10family incorporates ultra-high-performance cores with deep sub
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CB-C10
CB-C10family
D78 NEC
986M
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ic 321
Abstract: No abstract text available
Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / „PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAM IC RAM 1M-W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.
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uPD42S16160L
uPD4216160L
uPD42S18160L
uPD4218160L
16M-BIT
16-BIT,
PD42S16160L,
4216160L,
42S18160L,
4218160L
ic 321
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT / / P D 42 S 18165 L , 4218165 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The jiP D 4 2S 18165L, 4218165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page
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16-BIT,
uPD42S18165L
uPD4218165L
PD42S18165L
iPD42S18165L,
4218165L
50-pin
42-pin
//PD42S18165L-A60,
421B74
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Untitled
Abstract: No abstract text available
Text: NEC 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER UPC1677B UPC1677C OUTLINE DIMENSIONS FEATURES • H IG H POW ER O UTPUT: + 19.5 dBm Units in mm OUTLINE B08 • EXCELLENT FREQ UENC Y RESPONSE: 1.27±0.1 1.27+0,1 1.7GHz TYP at 3 dB Down (LEADS 2,4,6.8) 0.6
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UPC1677B
UPC1677C
UPC1677
UPC1677B,
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