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    NE76000 Search Results

    NE76000 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE76000 NEC C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET Original PDF
    NE76000 NEC Semiconductor Selection Guide Original PDF
    NE76000 NEC Low noise K to Ku band GaAs MESFET. Original PDF
    NE76000 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE76000L NEC Low noise K to Ku band GaAs MESFET. Original PDF

    NE76000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor nec D78

    Abstract: D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176
    Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: Pm Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 57 Ga = 9.0 dB TYP. at f = 12 GHz DRAIN DRAIN VDS 5.0 V


    Original     		PDF NE76000 transistor nec D78 D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176

    32E-12

    Abstract: No abstract text available
    Text: NONLINEAR MODEL Q1 SCHEMATIC RD LG LD 0.06 76000 NE76000 DRAIN 2 RG R_COMP 480 GATE 0.14 1.5 CRF_X 100 RS 4.6 LS 0.02 SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.73 RG capacitance picofarads VTOSC RD inductance


    Original     		PDF NE76000 98e-11 2e-12 11e-12 4e-12 04e-12 24-Hour 32E-12

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    RN501

    Abstract: NE76000 NE76000L 150J10
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA dB • LG = 0.3 µm, WG = 280 µm


    Original     		PDF NE76000 NE76000 NE760 NE76000L 24-Hour RN501 NE76000L 150J10

    NE76000

    Abstract: NE76000L AF127
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA dB • LG = 0.3 µm, WG = 280 µm


    Original     		PDF NE76000 NE76000 NE760 NE76000L 24-Hour NE76000L AF127

    uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    J100

    Abstract: J150 NE76000
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz HIGH ASSOCIATED GAIN 0Q ;o Ga = 9 dB TYP at f = 12 GHz < O c La = 0.3 |xm, Wa = 280 um ro


    OCR Scan     		PDF NE76000 NE76000 NE760 lS22l IS12I 20jim NE76000L NE76000N

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NO ISE FIG URE NF = 1 .6 dB TYP at f = 12 GHz HIG H A S S O C IA TED GAIN Ga = 9 dB TYP at f = 12 GHz m ;o < D ç m Lg = 0.3 |im , W g = 280 |im


    OCR Scan     		PDF NE76000 E76000 NE760 04e-12 NE76000 140nm NE76000L

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m


    OCR Scan     		PDF NE76000

    NE76084

    Abstract: NE760 NE76000 NE76083A S221 y427
    Text: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated


    OCR Scan     		PDF 4E7414 NE760 NE76000 NE76084 NE76083A S221 y427

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, I d s = 10 m A LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN tn T> G a = 9 dB TYP at f = 12 GHz L g = 0.3 |im , W g = 2 80 Jim


    OCR Scan     		PDF NE76000 NE76000 NE760 IS12S21I NE76000L

    NE76000

    Abstract: 3079 alpha wire G1225
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 3 V, Id s = 1 0 m A LOW NOISE FIGURE NF = 1.6 dB TYP a t f = 12GHz 24 21 HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 18 < Lg = 0.3 im, W g = 280 jam


    OCR Scan     		PDF 12GHz NE76000 NE76000 NE760 140jjm 20jjjm NE76000L 3079 alpha wire G1225

    NE67383

    Abstract: No abstract text available
    Text: General Purpose GaAs FETs Typical Specifications @ T a = 25°C Pw t m a '4 m . I NEW^ Güw> |N EW *> I NEW > I N Ew V I NEW ^ »»a Vus Id s M ÊM mA (mA) p p fc M NE33200 NE67300 NE71300 NE76000 NE76100 0.3 0.3 0.3 0.3 1.0 280 280 280 280 400 0.1 0.1 0.1


    OCR Scan     		PDF NE33200 NE67300 NE71300 NE76000 NE76100 NE76083A NE33284A NE25118 NE25139 NE25339 NE67383

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    NE334S01

    Abstract: E7138 nec microwave NE76084 NE67383
    Text: NEC is a global force in the dozens of satellites around the world. j and engineering services are all geared to computer, communications and home CEL’s Space/Hi Rel Management Group | helping you get your designs off paper and electronics markets. The company’s products


    OCR Scan     		PDF