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    onsemi NDT455N

    MOSFET N-CH 30V 11.5A SOT223-4
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    DigiKey NDT455N Cut Tape 1
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    NDT455N Digi-Reel 1
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    NDT455N Reel 2,500
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    National Semiconductor Corporation NDT455N

    TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,11.5A I(D),SOT-223
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    Quest Components NDT455N 1,572
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    NDT455N Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDT455N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT455N Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT455N National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT455N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDT455NJ23Z Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDT455N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    351A3

    Abstract: NDT455N
    Text: July 1996 N NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDT455N NDT455N 351A3

    NDT455N

    Abstract: No abstract text available
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process


    Original     		PDF NDT455N NDT455N

    CBVK741B019

    Abstract: F63TNR F852 NDT455N PN2222A
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process


    Original     		PDF NDT455N CBVK741B019 F63TNR F852 NDT455N PN2222A

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    220v AC voltage stabilizer schematic diagram

    Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122


    Original     		PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor

    2n2222a SOT23

    Abstract: GRM39X7R103K050AD MAX1778 MAX1880 EMK107BJ104MA MAX1778EVKIT MAX1881 MAX1882
    Text: 19-2063; Rev 0; 6/01 MAX1778 Evaluation Kit Features ♦ +2.7V to +5.5V Input Range ♦ Output Voltages +8V, >200mA Step-Up Switching Regulator +20V, >10mA (Positive Charge-Pump Regulator) -5V, >20mA (Negative Charge-Pump Regulator) +2.5V, >200mA (LDO Linear Regulator)


    Original     		PDF MAX1778 200mA 150mA 500kHz MAX1778EVAX1778/MAX1880/MAX1881/MAX1882 2n2222a SOT23 GRM39X7R103K050AD MAX1880 EMK107BJ104MA MAX1778EVKIT MAX1881 MAX1882

    34B SOT

    Abstract: NDT455N
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N NDT455N OT-223 34B SOT

    diode RN 1220

    Abstract: NDT455N diode 561
    Text: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS


    OCR Scan     		PDF NDT455N OT-223 LSD113D 00401EÃ diode RN 1220 NDT455N diode 561

    T2D 24 DIODE

    Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
    Text: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is


    OCR Scan     		PDF NDT455N OT-223 NDT455N OT-223 T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D

    NDT453N

    Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
    Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |


    OCR Scan     		PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N