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    N10 TRANSISTOR Search Results

    N10 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N10 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SO918

    Abstract: marking N10
    Text: SO918 SMALL SIGNAL NPN TRANSISTOR • ■ ■ Type Marking SO 918 N10 SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS SMALL SIGNAL VHF AMPLIFICATION AND OSCILLATOR APPLICATIONS 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM


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    PDF SO918 OT-23 SO918 marking N10

    Diode Mark N10

    Abstract: RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334
    Text: [ /Title RFM18 N08, RFM18 N10, RFP18N 08, RFP18N 10 /Subject (18A, 80V and 100V, 0.1 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN FO pdfmark RFM18N08, RFM18N10, RFP18N08, RFP18N10


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    PDF RFM18 RFP18N O204AA, O220AB) RFM18N08, RFM18N10, RFP18N08, RFP18N10 Diode Mark N10 RFP18N10 TA17421 RFM18N08 RFM18N10 RFP18N08 TB334

    cgs resistor

    Abstract: RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig
    Text: RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs [ /Title RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers,


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    PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 RFM12 RFP12 TA09594. RFM12N08 cgs resistor RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig

    triac mw 131 600d

    Abstract: 65n06
    Text: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717


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    N06 TRANSISTOR

    Abstract: n22 transistor N-05 DDTC144VCA
    Text: DDTC R1¹R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 A SOT-23 3 OUT


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    PDF OT-23 OT-23, MIL-STD-202, 10mA/0 DDCT123JCA DDCT143ZCA DDCT114YCA 100MHz DS30330 N06 TRANSISTOR n22 transistor N-05 DDTC144VCA

    N06 TRANSISTOR

    Abstract: DDTC143ZUA transistor N14 DDTC124XUA
    Text: DDTC R1¹R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 SOT-323 A 3 C


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    PDF OT-323 OT-323, MIL-STD-202, 10mA/0 DDCT123JUA DDCT143ZUA DDCT114YUA 100MHz DS30322 N06 TRANSISTOR DDTC143ZUA transistor N14 DDTC124XUA

    transistor N14

    Abstract: N06 TRANSISTOR
    Text: DDTC R1¹R2 SERIES E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR UNDER DEVELOPMENT NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 TOP VIEW B Mechanical Data


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    PDF OT-523 OT-523, MIL-STD-202, 10mA/0 DDCT123JE DDCT143ZE DDCT114YE 100MHz DS30314 transistor N14 N06 TRANSISTOR

    n22 transistor

    Abstract: N06 TRANSISTOR DDTC113ZKA
    Text: DDTC R1¹R2 SERIES KA NPN PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 UNDER DEVELOPMENT A SC-59 D Dim Min


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    PDF SC-59 SC-59, MIL-STD-202, 10mA/0 DDTC123JKA DDTC143ZKA DDTC114YKA 100MHz DS30338 n22 transistor N06 TRANSISTOR DDTC113ZKA

    n02 marking code sot

    Abstract: marking code n09 N05 TRANSISTOR MARKING CODE marking code n11 marking code n14 DDTC124XUA ua 323 transistor marking code NW sot-323 MARKING CODE 24 TRANSISTOR marking code NW
    Text: DDTC R1¹R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 SOT-323 A 3 C Mechanical Data ·


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    PDF OT-323 OT-323, MIL-STD-202, DDTC113ZUA DDTC123YUA DDTC123JUA DDTC143XUA DDTC143FUA DDTC143ZUA n02 marking code sot marking code n09 N05 TRANSISTOR MARKING CODE marking code n11 marking code n14 DDTC124XUA ua 323 transistor marking code NW sot-323 MARKING CODE 24 TRANSISTOR marking code NW

    DDTC113ZUA

    Abstract: DDTC114WUA DDTC114YUA DDTC123JUA DDTC123YUA DDTC143FUA DDTC143XUA DDTC143ZUA J-STD-020A sot-323 transistor marking code 15
    Text: DDTC R1¹R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 A OUT SOT-323 B C Mechanical Data


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    PDF OT-323 DDTC123JUA DS30322 DDTC113ZUA DDTC114WUA DDTC114YUA DDTC123JUA DDTC123YUA DDTC143FUA DDTC143XUA DDTC143ZUA J-STD-020A sot-323 transistor marking code 15

    n05 marking code

    Abstract: DDTC124XUA
    Text: DDTC R1¹R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 A OUT SOT-323 B C Mechanical Data


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    PDF OT-323 OT-323, J-STD-020A MIL-STD-202, DDTC113ZUA DDTC123YUA DDTC123JUA DDTC143XUA DDTC143FUA DDTC143ZUA n05 marking code DDTC124XUA

    DDTC113ZKA

    Abstract: DDTC123JKA DDTC123YKA DDTC143FKA DDTC143XKA DDTC143ZKA J-STD-020A transistor n21
    Text: DDTC R1¹R2 SERIES KA NPN PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · A Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 OUT B C Mechanical Data · · ·


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    PDF SC-59 625ng DDTC123JKA DS30338 DDTC113ZKA DDTC123JKA DDTC123YKA DDTC143FKA DDTC143XKA DDTC143ZKA J-STD-020A transistor n21

    n10 marking code sot 23

    Abstract: n05 marking code DDTC113ZCA DDTC114WCA DDTC114YCA DDTC123JCA DDTC123YCA DDTC143FCA DDTC143XCA DDTC143ZCA
    Text: DDTC R1¹R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 A TOP VIEW Mechanical Data · ·


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    PDF OT-23 DDTC113ZCA DDTC123YCA DDTC123JCA DDTC143XCA DDTC143FCA DDTC143ZCA DDTC114YCA DDTC114WCA DDTC124XCA n10 marking code sot 23 n05 marking code DDTC113ZCA DDTC114WCA DDTC114YCA DDTC123JCA DDTC123YCA DDTC143FCA DDTC143XCA DDTC143ZCA

    SOT-23 marking 050 transistor

    Abstract: n05 marking code n18 marking code sot 23 N05 TRANSISTOR MARKING CODE n02 marking code sot n10 marking code sot 23 DDTC144VCA DDTC114WCA DDTC114YCA DDTC123YCA
    Text: DDTC R1¹R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 A TOP VIEW Mechanical Data · ·


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    PDF OT-23 DDTC113ZCA DDTC123YCA DDTC123JCA DDTC143XCA DDTC143FCA DDTC143ZCA DDTC114YCA DDTC114WCA DDTC124XCA SOT-23 marking 050 transistor n05 marking code n18 marking code sot 23 N05 TRANSISTOR MARKING CODE n02 marking code sot n10 marking code sot 23 DDTC144VCA DDTC114WCA DDTC114YCA DDTC123YCA

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TLN103A TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N10 3A Unit in mm INFRARED LED FOR PHOTO SENSOR OPTO-ELECTRONIC SWITCH 0 3 . 0 ± 0 .3 SELECTOR TAPE, CARD READERS INFRARED RAYS APPLIED EQUIPMENT Wide half value angle : B \ = ±80° TYP.


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    PDF TLN103A TPS603A. TPS603A

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    SO3572R

    Abstract: transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl
    Text: A C T IV E COM PON EN TS FOR H Y B R ID C IR C U IT S COMPOSANTS AC TIFS POUR CIRCUITS H YBRIDES CB-166 SOT-23 Silicon NPN transistors, R F - V H F - U H F amplification Transistors NPN silicium , amplification H F - VHF - UHF M a r k in g M arq ua ge Typo


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    PDF CB-166 OT-23) BFW30 1000m SO3572R transistors BFW30 BFR 450 G1 BL BF115 BFR53R BFR 91 A N SO3570 BFR 50 1300 bl

    KTA1298

    Abstract: KTC3265 KTA1298 kec
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA KTC3265 EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • High DC Current Gain : Iife—100 320. • Low Saturation Voltage : V cE sat = 0.4V (Max.) (Ic=500mA, IB=20mA).


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    PDF KTC3265 500mA, KTA1298. Ic/Ib-25 KTA1298 KTC3265 KTA1298 kec

    Diode Mark N10

    Abstract: BZV49 diode GF M
    Text: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß


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    PDF FCX2369A FCX2369 BZV49 BAW79D BAW79C BAW79B BAW79A 200mA, BAW78D BAW78C Diode Mark N10 diode GF M

    BAW78C

    Abstract: No abstract text available
    Text: SOT89 NPN SW ITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter Type hFE VcBO V VCEO V lc cont mA P to t FCX2369A 40 15 500 FCX2369 40 15 500 Part Mark Code v CE(sat) M a x M in/M ax at lc / VCE m A / Volts Volts at lc / lB mA 1.0 40/120 10/1 0.2


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    PDF FCX2369A FCX2369 BZV49 ZVN2120Z ZVNL120Z BST86 ZVN2106Z ZVN4206Z ZVP2120Z ZVP2106Z BAW78C

    SO4403

    Abstract: F5GL marking n20 So642 SO3903
    Text: S G S— THOMSON 71C D 1 7 ^ E CÎR37 0 0 0 4 ^ 1 , 3 | THOÎÏÎSOM SEMICONDUCTORS_ ' T - J r - // y . 3A f & switching transistors Characteristics at 2 5 °C Maximum Type« ratings NPN PNP p »o» VCEO (mWJ (V) 200 12 h2lE@ le min BSV 52


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    PDF

    transistor N14

    Abstract: n7 transistor transistor n15 n10 transistor N4 transistor P-029 P08 transistor LSA2000 p023 transistor
    Text: GFB2020A GFB2020A GFB2020A 16 X 16 2 'S COMPLIMENT MULTIPLIER GENERAL DESCRIPTION: THE GFB2020A MEGAFUNCTION IS A 16 X 16 2 'S COMPLEMENT MULTIPLIER WHICH GENERATES A 32-BIT PRODUCT. BY USING A MODIFIED BOOTH ALGORITHM, THIS MEGAFUNCTION GIVES A REASONABLE SPEED AND GATE COUNT.


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    PDF GFB2020A GFB2020A 32-BIT LL7000 LSA2000 -GFB2020ABOOK transistor N14 n7 transistor transistor n15 n10 transistor N4 transistor P-029 P08 transistor p023 transistor

    ses 554

    Abstract: SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R
    Text: sw itching transistors transistors de commutation Types N PN THOMSON-CSF M axim u m ratings PNP Characteristics at 25 °C p totl V c E O h21E min (mW •c @ VCE(sat) @ Ic / 'B max (V) max (V) Im A ) (m A) C 22b *T m in max (M H z) (pF) B S V 52(R) 200 12


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    PDF 2369IR) ses 554 SO3572R marking n47 BSV52R F5BF marking 502S SO3570R Marking P18 SO2221A BSR15R

    bcw 918

    Abstract: SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115
    Text: micropackaged devices microboitiers ^ général purpose and switching transistor selector guide guide de sélection-transistors de commutation et usage général THOMSON-CSF Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221


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    PDF O-236 bcw 918 SO3572R transistor NB B4 marking BSR16R BCW General Purpose Transistor 2907A BF BFr pnp transistor 2907A ses 554 Switching transistor 50115