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    N-CHANNEL FET Search Results

    N-CHANNEL FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSR56

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel


    Original     		PDF BSR56; BSR57; BSR58 MAM385 BSR56

    MBK288

    Abstract: PMBF4393 PMBF4391 PMBF4392
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel


    Original     		PDF PMBF4391; PMBF4392; PMBF4393 MAM385 MBK288 PMBF4393 PMBF4391 PMBF4392

    BSR58

    Abstract: BSR56 BSR57 sot23 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSR56; BSR57; BSR58 N-channel FETs Product specification File under Discrete Semiconductors, SC07 April 1991 Philips Semiconductors Product specification N-channel FETs BSR56; BSR57; BSR58 DESCRIPTION Symmetrical silicon n-channel


    Original     		PDF BSR56; BSR57; BSR58 MAM385 BSR58 BSR56 BSR57 sot23 marking code

    PMBF4391

    Abstract: PMBF4392 PMBF4393 MBK288
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4391; PMBF4392; PMBF4393 N-channel FETs Product specification April 1995 NXP Semiconductors Product specification PMBF4391; PMBF4392; PMBF4393 N-channel FETs DESCRIPTION Symmetrical silicon n-channel depletion type junction field-effect


    Original     		PDF PMBF4391; PMBF4392; PMBF4393 MAM385 R77/02/9 PMBF4391 PMBF4392 PMBF4393 MBK288

    Bft46

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic


    Original     		PDF BFT46 MAM385 R77/02/pp11 Bft46

    CRS15

    Abstract: BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification File under Discrete Semiconductors, SC07 December 1997 Philips Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect


    Original     		PDF BFT46 MAM385 CRS15 BFT46 fet junction n-channel transistor FET MARKING CODE MARKING CODE FET MDA267 Silicon N-Channel Junction FET sot23 Philips fet SOT23 code marking MDA274 MARKING m3p

    CRS15

    Abstract: BFT46
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT46 N-channel silicon FET Product specification December 1997 NXP Semiconductors Product specification N-channel silicon FET BFT46 DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic


    Original     		PDF BFT46 MAM385 R77/02/pp11 CRS15 BFT46

    d1711

    Abstract: 2SK1285 C11531E
    Text: DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX. 3.2 ±0.2 2.8 MAX.


    Original     		PDF 2SK1285 2SK1285 C11531E) d1711 C11531E

    FDMS7700S

    Abstract: 501B 8 P mosfet 9630
    Text: FDMS7700S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDMS7700S FDMS7700S 501B 8 P mosfet 9630

    FDMS7600AS

    Abstract: 501B 8 P
    Text: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDMS7600AS FDMS7600AS 501B 8 P

    FDML7610S

    Abstract: No abstract text available
    Text: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDML7610S FDML7610S

    FDML7610S

    Abstract: C3028 561b
    Text: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a „ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDML7610S FDML7610S C3028 561b

    RTJC

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H FDD8424H RTJC

    Untitled

    Abstract: No abstract text available
    Text: FDML7610S Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 28 A, 4.2 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDML7610S

    Untitled

    Abstract: No abstract text available
    Text: FDMS7600AS Dual N-Channel PowerTrench MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.8 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a ̈ Max rDS on = 7.5 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDMS7600AS

    a2791

    Abstract: M20S PA2791GR G1820 diode MARKING M16
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2791GR SWITCHING N- AND P-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. 8 5 N-channel 1 : Source 1


    Original     		PDF PA2791GR PA2791GR a2791 M20S G1820 diode MARKING M16

    Untitled

    Abstract: No abstract text available
    Text: SELECTION GUIDE Page N-channel junction field-effect transistors 8 N-channel junction field-effect transistors for switching 10 P-channel junction field-effect transistors for switching 12 N-channel single-gate MOS-FETs for switching 12 N-channel dual-gate MOS-FETs


    OCR Scan     		PDF

    2SK1287

    Abstract: MEI-1202 TEA-1035
    Text: DATA SHEET NEC . « N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR _ f 2SK1287 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1287 is N-channel M O S Field Effect Transistor designed for in millimeters


    OCR Scan     		PDF 2SK1287 IEI-1209) MEI-1202 TEA-1035

    JRC 2374

    Abstract: JRC 1496 K1495 ic 1496 ic 1496 applications k1496 1496-Z K149 2SK1496 R/JRC+2374
    Text: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTORS 2SK1495,2SK1495-Z/2SK149&2SK1496-Z SW ITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1495/2SK1496 is N-channel MOS Field Effect Tr«isistor de­ signed for high voltage switching applications.


    OCR Scan     		PDF 2SK1495 2SK1495-Z/2SK149 2SK1496-Z 2SK1495/2SK1496 El-1209) 1495-Z/2S 1496-Z JRC 2374 JRC 1496 K1495 ic 1496 ic 1496 applications k1496 1496-Z K149 2SK1496 R/JRC+2374

    2SK1664

    Abstract: No abstract text available
    Text: DATA SHEET i N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1664 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1664 is N-channel M O S Field Effect Transistor designed for PACKAGE DIMENSIONS in millimeters high voltage switching applications.


    OCR Scan     		PDF 2SK1664 2SK1664 IEI-1209)

    2SK1285

    Abstract: MEI-1202 TEA-1035
    Text: DATA SHEET NEC ^N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1285 is N-channel MOS Field Effect Transistor in millimeters designed for solenoid, m otor and lamp driver.


    OCR Scan     		PDF 2SK1285 MEI-1202 TEA-1035

    Untitled

    Abstract: No abstract text available
    Text: 4AM15 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N Channel: RDSu,n < 0 .5 £1, V os = 10 V, ID = 2 A P Channel: RDS on) < 0 .9 Vas = - 1 0 V, ID = - 2 A • Low drive current


    OCR Scan     		PDF 4AM15

    transistor d 2389

    Abstract: 2SK1290 MEI-1202 TEA-1035 TR240 iE25
    Text: DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1290 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK1290 is N-channel MOS Field Effect Transistor designed for in millimeters solenoid, m otor and lamp driver.


    OCR Scan     		PDF 2SK1290 IEI-1209) transistor d 2389 MEI-1202 TEA-1035 TR240 iE25

    2SK1492

    Abstract: MEI-1202 TEA-1035
    Text: _ DATA SHEET NEC r N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION The 2SK1492 is N-channel MOS Field Effect Transistor de­ {in millimeters signed fo r high voltage switching applications.


    OCR Scan     		PDF 2SK1492 MEI-1202 TEA-1035