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    N-CHANNEL ENHANCEMENT 200V 60A Search Results

    N-CHANNEL ENHANCEMENT 200V 60A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N-CHANNEL ENHANCEMENT 200V 60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FRL230R4 JANSR2N7275
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7275 FRL230R4 1000K 1E14 2E12 FRL230R4 JANSR2N7275

    MIL-S-19500

    Abstract: mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294
    Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7294 FRF250R4 1000K MIL-S-19500 mosfet 60a 200v 100v 23A P-Channel MOSFET FRF250R4 N-channel enhancement 200V 60A 1E14 2E12 JANSR2N7294

    100v 23A P-Channel MOSFET

    Abstract: 1E14 2E12 FRF250R4 JANSR2N7294
    Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 23A, 200V, rDS ON = 0.115Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7294 FRF250R4 1000K 100v 23A P-Channel MOSFET 1E14 2E12 FRF250R4 JANSR2N7294

    FRL230

    Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7275 FRL230R4 1000K FRL230 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7294 Formerly FRF250R4 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 23A, 200V, rDS ON = 0.115Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7294 FRF250R4 1000K

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7275 FRL230R4 1000K

    IXFH60N20F

    Abstract: IXFT60N20F
    Text: Advance Technical Information IXFH60N20F IXFT60N20F HiPerRFTM Power MOSFET VDSS ID25 RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions


    Original     		PDF IXFH60N20F IXFT60N20F 200ns O-247 338B2 IXFH60N20F IXFT60N20F

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerRFTM Power MOSFET VDSS ID25 IXFH60N20F IXFT60N20F RDS on trr F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 60A Ω 38mΩ 200ns TO-247 Symbol Test Conditions


    Original     		PDF IXFH60N20F IXFT60N20F 200ns O-247 -55om 338B2

    IXTH60N20L2 Linear Power MOSFET

    Abstract: ixth60n20 60n20 IXTT60N20L2 IXTH60N20L2
    Text: Advance Technical Information IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 = 200V = 60A ≤ 45mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S Tab Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 O-268 O-247 IXTT60N20L2 100ms IXTH60N20L2 Linear Power MOSFET ixth60n20 60n20 IXTH60N20L2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 = 200V = 60A ≤ 45mΩ Ω RDS on TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 O-268 IXTT60N20L2 100ms 60N20L2

    Untitled

    Abstract: No abstract text available
    Text: IXFR120N20 HiPerFETTM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   200V 105A  19.5m 250ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFR120N20 250ns ISOPLUS247 E153432 -100A/ï -100V, 338B2

    IXFB210N20P

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB210N20P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFB210N20P 200ns PLUS264TM 100ms 210N20P IXFB210N20P

    60n20

    Abstract: 60N20T IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T
    Text: Preliminary Technical Information IXTA60N20T IXTP60N20T IXTQ60N20T TrenchTM Power MOSFET VDSS ID25 RDS on = 200V = 60A Ω ≤ 40mΩ TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions


    Original     		PDF IXTA60N20T IXTP60N20T IXTQ60N20T O-263 O-220AB 60N20T 60n20 IXTQ60N20T IXTA60N20T IXTP60N20T ixta 60N20T

    IXFR230N20T

    Abstract: No abstract text available
    Text: IXFR230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 156A  8.0m 200ns RDS on   trr (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS VDGR


    Original     		PDF IXFR230N20T 200ns ISOPLUS247 E153432 230N20T 9E-N19) IXFR230N20T

    IXFK230N20T

    Abstract: IXFX230N20T PLUS247 ixfk23 230N20T
    Text: Advance Technical Information IXFK230N20T IXFX230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 230A Ω 7.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFK230N20T IXFX230N20T 200ns O-264 230N20T IXFK230N20T IXFX230N20T PLUS247 ixfk23

    IXFX170N20T

    Abstract: IXFK170N20T PLUS247
    Text: Advance Technical Information IXFK170N20T IXFX170N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 170A Ω 11mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXFK170N20T IXFX170N20T 200ns O-264 170N20T IXFX170N20T IXFK170N20T PLUS247

    230N20T

    Abstract: IXFN230N20T
    Text: Advance Technical Information IXFN230N20T GigaMOSTM Power MOSFET VDSS ID25 = = 200V 230A Ω 7.5mΩ 200ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		PDF IXFN230N20T 200ns OT-227 E153432 230N20T 230N20T IXFN230N20T

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information MMIX1F230N20T GigaMOSTM TrenchTM HiperFETTM Power MOSFET VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 200V 168A Ω 8.3mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F230N20T 200ns

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information GigaMOSTM TrenchTM HiperFETTM Power MOSFET MMIX1F230N20T VDSS ID25 = = trr ≤ RDS on ≤ (Electrically Isolated Tab) 200V 168A Ω 8.3mΩ 200ns D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions


    Original     		PDF MMIX1F230N20T 200ns

    60N20F

    Abstract: 60n20
    Text: HiPerRFTM Power MOSFETs IXFH 60N20F IXFT 60N20F F-Class: MegaHertz Switching VDSS ID25 RDS on = = = 200V 60A Ω 38mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data TO-247 AD (IXFH)


    Original     		PDF 60N20F 60N20F O-247 O-268 728B1 123B1 065B1 60n20

    60n20

    Abstract: C-315
    Text: Advance Technical Information HiPerRFTM Power MOSFETs IXFH 60N20F IXFT 60N20F F-Class: MegaHertz Switching VDSS ID25 RDS on = = = 200V 60A Ω 38mΩ trr ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr TO-247 AD (IXFH)


    Original     		PDF 60N20F O-247 728B1 60n20 C-315

    IXFN210N20

    Abstract: IXFN210N20P
    Text: IXFN210N20P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXFN210N20P 200ns E153432 100ms 210N20P 6-10-A IXFN210N20 IXFN210N20P

    Untitled

    Abstract: No abstract text available
    Text: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFN210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 188A Ω 10.5mΩ 200ns miniBLOC E153432 S Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C


    Original     		PDF IXFN210N20P 200ns E153432 100ms 210N20P 6-10-A

    SDF120NA20

    Abstract: D403
    Text: Æiltton _ PRODUCT CÂTÂL @ HFVICFS- INC. N-CHANNEL ENHANCEMENT MOS FET 200V, 120A, 0.03Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE RGS=1.0Mn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25'C)


    OCR Scan     		PDF SDF120NA20 MIL-STD-883 300iis, D403