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    N AND P MOSFET Search Results

    N AND P MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    N AND P MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot-363 n-channel mosfet

    Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
    Text: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel


    Original     		PDF CMKDM3590 CMKDM7590 CMKDM3575 OT-363 CMKDM3590: CMKDM7590: CMKDM3575: RATI150 CMKDM7590 sot-363 n-channel mosfet sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 Dual P-Channel mosfet sot-363 SOT-363 marking th

    Untitled

    Abstract: No abstract text available
    Text: TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage


    Original     		PDF TC1550 TC1550 DSFP-TC1550 A091608

    marking code R

    Abstract: MARKING CODE W
    Text: Central CMBDM3590 N-CH CMBDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMBDM3590 and CMBDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		PDF CMBDM3590 CMBDM7590 CMBDM3590: CMBDM7590: OT-923 200mA CMBDM7590 marking code R MARKING CODE W

    CMUDM7590

    Abstract: on semiconductor marking code sot CMUDM3590
    Text: Central CMUDM3590 N-CH CMUDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM3590 and CMUDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		PDF CMUDM3590 CMUDM7590 CMUDM3590 OT-523 CMUDM3590: CMUDM7590: 200mA CMUDM7590 on semiconductor marking code sot

    MOSFET P-channel SOT-23

    Abstract: Power MOSFET N-Channel sot-23 CMPDM7590 C759 CMPDM3590 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET
    Text: Central CMPDM3590 N-CH CMPDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM3590 and CMPDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		PDF CMPDM3590 CMPDM7590 CMPDM3590 OT-23 CMPDM3590: CMPDM7590: 200mA MOSFET P-channel SOT-23 Power MOSFET N-Channel sot-23 C759 C359 sot-23 P-Channel MOSFET MOSFET P channel SOT-23 P-Channel SOT-23 Power MOSFET

    CMSDM7590

    Abstract: marking CODE 75C Complementary MOSFETs logic level complementary MOSFET
    Text: Central CMSDM3590 N-CH CMSDM7590 P-CH TM Semiconductor Corp. SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSDM3590 and CMSDM7590 are complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs


    Original     		PDF CMSDM3590 CMSDM7590 CMSDM3590 OT-323 CMSDM3590: CMSDM7590: 200mA marking CODE 75C Complementary MOSFETs logic level complementary MOSFET

    Untitled

    Abstract: No abstract text available
    Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance


    Original     		PDF TC6215 TC6215 DSFP-TC6215 A122208

    uPA67

    Abstract: SC74A uPA672T UPA572T upa500 uPA600 UPA607T
    Text: DUAL N & P CHANNEL SMALL SIGNAL MOSFETS µPA500 & µPA600 SERIES • DUAL N CHANNEL, DUAL P CHANNEL AND A COMBINED N AND P CHANNEL • DRAIN CURRENTS LESS THAN 200mA • CAPABLE OF OPERATING FROM VOLTAGES AS LOW AS 1.5V N Type 1 5 1 2 P Type 2 4 5 3 1 N Type 4


    Original     		PDF PA500 PA600 200mA PA572T PA672T PA502T PA602T PA606T PA611TA PA573T uPA67 SC74A uPA672T UPA572T upa500 uPA600 UPA607T

    40841

    Abstract: 40841 MOSFET CA3096AE CA3096 CA3096A CA3096AM CA3096AM96 CA3096C CA3096CE CA3096E
    Text: CA3096 S E M I C O N D U C T O R N-P-N/P-N-P Transistor Array March 1993 Applications Description • Five-Independent Transistors - Three N-P-N and - Two P-N-P The CA3096C, CA3096, and CA3096A are general purpose high voltage silicon transistor arrays. Each array consists of


    Original     		PDF CA3096 CA3096C, CA3096, CA3096A CA3096A, CA3096C 40841 40841 MOSFET CA3096AE CA3096 CA3096AM CA3096AM96 CA3096CE CA3096E

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM14615AA-N •General Description ELM14615AA-N uses advanced trench technology to provide excellent Rds on and low gate charge. With N-channel(N-ch) and P-channel(P-ch) packed in one IC.ELM14615AA-N also includes ESD-protected function.


    Original     		PDF ELM14615AA-N ELM14615AA-N

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU ○Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		PDF SSM6E03TU

    Untitled

    Abstract: No abstract text available
    Text: SSM6E03TU TOSHIBA Multi-Chip Device Silicon P-Channel MOS Type + N-Channel MOS Type SSM6E03TU Power Management Switch Applications Unit: mm • P-channel MOSFET and 1.8 V drive • N-channel MOSFET and 1.5 V drive • P-channel MOSFET and N-channel MOSFET incorporated into one


    Original     		PDF SSM6E03TU

    20A marking zener diode

    Abstract: No abstract text available
    Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels


    Original     		PDF TC6215 TC6215TG DSFP-TC6215 A111108 20A marking zener diode

    TC6215

    Abstract: No abstract text available
    Text: TC6215 N- and P-Channel Enhancement-Mode Dual MOSFET Features ► ► ► ► ► ► ► ► ► ► Back to back gate-source Zener diodes Guaranteed RDS ON at 4.0V gate drive Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels


    Original     		PDF TC6215 TC6215 DSFP-TC6215 A122208

    IRF7350

    Abstract: f-7101
    Text: PD - 94226B IRF7350 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape and Reel S1 G1 S2 G2 N - C H A N N EL M O S FE T 1 8 2 7 D1 3 6 D2 4 5 D2 P -C H A N N E L M O S F E T N-Ch P-Ch VDSS 100V


    Original     		PDF 94226B IRF7350 -100V IRF7350 f-7101

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel Order Number/Package P-Channel 7.0 SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG inherent00mA

    Untitled

    Abstract: No abstract text available
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG i00mA

    TC2320TG

    Abstract: ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA
    Text: TC2320 TC2320 N- and P- Channel Enhancement-Mode Dual MOSFET BVDSS/BVDGS N-Channel P-Channel 200V -200V RDS ON (max) N-Channel 7.0 Order Number/Package P-Channel SO-8 12 TC2320TG Features Low Threshold DMOS Technology ❑ Low threshold The Supertex TC2320TG consist of a high voltage low threshold Nchannel and P-channel MOSFET in an SO-8 package. These low


    Original     		PDF TC2320 -200V TC2320TG TC2320TG -200mA ultrasound transducer circuit driver 1mhz TC2320 mosfet buffers output current 100mA

    marking code CT

    Abstract: "MARKING CODE CT" SOT-963
    Text: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for


    Original     		PDF CMRDM3575 OT-963 200mA 25-February marking code CT "MARKING CODE CT" SOT-963

    Untitled

    Abstract: No abstract text available
    Text: SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features • Low VGS th : VGS(th)=1.0~3.0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24m (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66m (@ VGS=-10V, ID=-2.7A)


    Original     		PDF SUF2001 13-MAR-13 KSD-T7F002-001

    RTJC

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H FDD8424H RTJC

    FDMJ1032C

    Abstract: marking 032 SC-75 Dual N & P-Channel
    Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement


    Original     		PDF FDMJ1032C FDMJ1032C marking 032 SC-75 Dual N & P-Channel

    Untitled

    Abstract: No abstract text available
    Text: TD3002Y mgs5SS N- and P-Channel Half-Bridge MOSFETs_ SO PACKAGE PRODUCT SUMMARY V BR|DSS N-Channel 60 P-Channel -60 r°?r 5 N-souRCE n~ •d N-GATE o ; (A p -s o u r c e 0.41 10 r r P-GATE ~TI N-DRAIN ~n N-DRAIN ~T~| P-DRAIN ~T~I P-DRAIN


    OCR Scan     		PDF TD3002Y VNDS06 VPDS06

    TD3001

    Abstract: No abstract text available
    Text: TD3001Y N- and P-Channel Half-Bridge MOSFETs 'Siliconix incorporated SO PACKAGE PRODUCT SUMMARY N-souRCE r r >d V ’X ’ (A) N-Channel 30 1.5 0.61 P-Channel -30 2 0.39 V (BR)DSS T I N-DRAIN N-GATE r r ~ l~ l N-DRAIN p-souRCE r r ~1~| P-DRAIN P-GATE C E


    OCR Scan     		PDF TD3001Y TD3001