mrf154 amplifier
Abstract: mc1723 ic nippon ferrite AN749 application of mc1723 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS MRF154 rf mosfet power amplifier 1N4148 1N5362
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
mrf154 amplifier
mc1723 ic
nippon ferrite
AN749
application of mc1723
MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
MRF154
rf mosfet power amplifier
1N4148
1N5362
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mrf154 amplifier
Abstract: AN749 MRF154 trifilar mc1723 ic 2225C MC1723 application notes 36803 T1/FERRITE TRANSFORMER Nippon capacitors
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0–100 MHz frequency range. ARCHIVE INFORMATION
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MRF154/D
MRF154
mrf154 amplifier
AN749
MRF154
trifilar
mc1723 ic
2225C
MC1723 application notes
36803
T1/FERRITE TRANSFORMER
Nippon capacitors
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AN749
Abstract: mrf154 amplifier Fair-Rite bead MC1723 MRF154 1N4148 1N5362
Text: Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
AN749
mrf154 amplifier
Fair-Rite bead
MC1723
MRF154
1N4148
1N5362
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF154/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range.
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MRF154/D
MRF154
MRF154/D*
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mrf154 amplifier
Abstract: on 5269 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
MRF154
mrf154 amplifier
on 5269 transistor
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balun 50 ohm
Abstract: 10k trimpot mrf154 amplifier wl gore 1N4148 1N5362 2204B MRF154 VRF154FL trifilar
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
balun 50 ohm
10k trimpot
mrf154 amplifier
wl gore
1N4148
1N5362
2204B
MRF154
trifilar
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VRF154
Abstract: arco mica trimmer wound trifilar 10 turns
Text: VRF154FL G VRF154FLMP(G) 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
100MHz
30MHz,
MRF154
VRF154
arco mica trimmer
wound trifilar 10 turns
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arco mica trimmer
Abstract: 1N4148 1N5362 2204B MRF154 VRF154FL
Text: VRF154FL 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
80MHz
VRF154FL
100MHz
30MHz,
MRF154
arco mica trimmer
1N4148
1N5362
2204B
MRF154
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SIT Static Induction Transistor
Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are
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AN1529/D
AN1529
AN1529/D*
SIT Static Induction Transistor
create uhf vhf tv matching transformer
AR165S
Granberg
AR-165S
power bjt advantages and disadvantages
all mosfet vhf power amplifier narrow band
rf POWER BJTs
mrf154 amplifier
bjt ce amplifier
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VRF154FL
Abstract: MRF154 1N5362 2204B VRF154 trifilar ATC 700E MP170
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
MRF154
1N5362
2204B
VRF154
trifilar
ATC 700E
MP170
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
MRF154
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Untitled
Abstract: No abstract text available
Text: VRF154FL VRF154FLMP 50V, 600W, 80MHz RF POWER VERTICAL MOSFET D The VRF154FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or intermodulation distortion.
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VRF154FL
VRF154FLMP
80MHz
VRF154FL
100MHz
30MHz,
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AN749
Abstract: 723 voltage regulator 600 Watt Mosfet Power Amplifier 1N4148 1N5357A MC1723 MRF154 MRF157 0.1 uf Ceramic disc Capacitors 104 mrf154 amplifier
Text: Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics
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MRF157/D
MRF157
AN749
723 voltage regulator
600 Watt Mosfet Power Amplifier
1N4148
1N5357A
MC1723
MRF154
MRF157
0.1 uf Ceramic disc Capacitors 104
mrf154 amplifier
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts
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MRF157
MRF157
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527 MOSFET TRANSISTOR motorola
Abstract: RL1009-5820-97-D1 AN749 NIPPON CAPACITORS MC1723 application notes IC1 723 1N4148 1N5357A MC1723 MRF154
Text: MOTOROLA Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics
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MRF157/D
MRF157
MRF157/D*
527 MOSFET TRANSISTOR motorola
RL1009-5820-97-D1
AN749
NIPPON CAPACITORS
MC1723 application notes
IC1 723
1N4148
1N5357A
MC1723
MRF154
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • 600 W, SO V, 80 MHz N-CHANNEL
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MRF154
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mrf154 amplifier
Abstract: MRF154 Mrf154 M
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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MRF154
mrf154 amplifier
Mrf154 M
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TH 2267
Abstract: equivalent transistor broadband transformers
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2 .0 -1 0 0 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics
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749 MOSFET TRANSISTOR motorola
Abstract: RF154 dss125
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF154 The RF MOSFET Line RF P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode MOSFET 600 W, 50 V. 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET . . . designed prim arily for linear large*signal output stages in the 2-100 MHz frequency range.
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RF154
749 MOSFET TRANSISTOR motorola
RF154
dss125
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MOTOROLA SELECTION mrf150
Abstract: mrf154 amplifier motorola MRF150 mrf138 mrf140 MRF148 MRF150 Selection guide of Transistors MRF153 mrf154
Text: l. jT, : p i r CuK \rjQyìms\ ! LI 1 / 3 1 211- 0 i MOS (TMOS) FETs 211-09 RF Power FETs provide high gain, improved high-order inter modulation distortion, high input impedance, and built-in gain control for ALC and manual power output control. The FETs
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211-0I
MRF153
MRF154
MRF138
MRF140
MRF148
MRF150
MOTOROLA SELECTION mrf150
mrf154 amplifier
motorola MRF150
Selection guide of Transistors
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0.1 mF ceramic disc capacitor
Abstract: MRF157 keystone carbon Fair-Rite ATC
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field Effect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts
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MRF157
0.1 mF ceramic disc capacitor
keystone carbon
Fair-Rite ATC
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723 VOLTAGE REGULATOR
Abstract: keystone carbon thermistor MC1723 rmc disc capacitor
Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line MRF157 Power Field Effect Transistor M otorola Preferred Device N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics
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MRF157
MRF157
723 VOLTAGE REGULATOR
keystone carbon thermistor
MC1723
rmc disc capacitor
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TRANSISTOR G13
Abstract: C1u TRANSISTOR mrf154 amplifier MRF157
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts
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MRF157
TRANSISTOR G13
C1u TRANSISTOR
mrf154 amplifier
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mrf154 amplifier
Abstract: L1009 749 MOSFET TRANSISTOR motorola
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics O utput Power = 600 Watts
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MRF157
mrf154 amplifier
L1009
749 MOSFET TRANSISTOR motorola
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