MOTOROLA RF POWER TRANSISTOR DATA BOOK Search Results

MOTOROLA RF POWER TRANSISTOR DATA BOOK Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MOTOROLA RF POWER TRANSISTOR DATA BOOK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
VK200 19 4B INDUCTOR Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	PDF	MRF275L VK200 19 4B INDUCTOR arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
UNELCO Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	Original	PDF	MRF275L/D MRF275L UNELCO S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts	Original	PDF	MRF6414 MRF6414 DL110/D)
motorola rf Power Transistor Abstract: 100 pf, ATC Chip Capacitor 305C BCV62 MRF6401 TL11 Motorola Potentiometer MRF64 Text: MOTOROLA Order this document by MRF6401/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6401 The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically	Original	PDF	MRF6401/D MRF6401 MRF6401 SOE200 motorola rf Power Transistor 100 pf, ATC Chip Capacitor 305C BCV62 TL11 Motorola Potentiometer MRF64
Mosfet J49 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz. 45 W, 150 MHz MOSFET BROADBAND	Original	PDF	MRF171A Mosfet J49
Mosfet J49 Abstract: DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.	Original	PDF	MRF171A/D MRF171A Mosfet J49 DL110 MRF171A MRF171 VK200 MOTOROLA MASTER RF Products
Motorola Power Transistor Data Book Abstract: BAS16 MRF6409 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high	Original	PDF	MRF6409/D MRF6409 MRF6409 Motorola Power Transistor Data Book BAS16 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating	Original	PDF	MRF897R/D MRF897R
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating	Original	PDF	MRF897R/D MRF897R MRF897R/D
BAS16 Abstract: MRF6409 DL110 Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high	Original	PDF	MRF6409/D MRF6409 MRF6409 BAS16 DL110
mallory 150 series Abstract: BD136 MRF897R TL11 GX-0300-55 395E-01 Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating	Original	PDF	MRF897R/D MRF897R mallory 150 series BD136 MRF897R TL11 GX-0300-55 395E-01
ut-85 Abstract: BD136 MRF897R TL11 35 W 960 MHz RF POWER TRANSISTOR NPN Text: MOTOROLA Order this document by MRF897R/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating	Original	PDF	MRF897R/D MRF897R ut-85 BD136 MRF897R TL11 35 W 960 MHz RF POWER TRANSISTOR NPN
motorola rf Power Transistor Data Book Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.	Original	PDF	MRF6409 MRF6409 DL110/D) motorola rf Power Transistor Data Book Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
MRF6409 Abstract: BAS16 motorola rf Power Transistor Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high	Original	PDF	MRF6409/D MRF6409 MRF6409 BAS16 motorola rf Power Transistor

Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.	Original	PDF	MRF897R MRF897R DL110/D)
transistor rf m 1104 Abstract: DL110 015 j47 1N4007 BD135 MRF6414 Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics	Original	PDF	MRF6414/D MRF6414 MRF6414 transistor rf m 1104 DL110 015 j47 1N4007 BD135
905-170 Abstract: MRF3010 VK200 VK20019-4B Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	Original	PDF	MRF3010/D MRF3010 905-170 MRF3010 VK200 VK20019-4B
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF3010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET 10 W, 1.6 GHz, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	Original	PDF	MRF3010/D MRF3010 MRF3010 MRF3010/D
NT 407 F power transistor Abstract: DL110 Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high	Original	PDF	MRF6409/D MRF6409 MRF6409 MRF6409/D NT 407 F power transistor DL110
sp 0937 Abstract: VK200 inductor of high frequencies Nippon capacitors Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 100W , 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single	OCR Scan	PDF	MRF275L/D MRF275L sp 0937 VK200 inductor of high frequencies Nippon capacitors
MRF255 equivalent Abstract: mrf255 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode 55 W, 12.5 Vdc, 54 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies	OCR Scan	PDF	MRF255 MRF255 equivalent
Mosfet J49 Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912 Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •	OCR Scan	PDF	MRF171A/D MRF171A Mosfet J49 MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
j718 Abstract: VK200/10-3B Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF3010 RF Power Field E ffect Transistor N-Channel Enhancement-Mode Lateral MOSFET l o w , 1.6 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,	OCR Scan	PDF	MRF3010 DL110/D) MRF3010 VK200 j718 VK200/10-3B
motorola rf device Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The M RF6409 is designed for GSM base stations applications. It incorpo rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.	OCR Scan	PDF	MRF6409 MRF6409 DL110/0) DL110/D) motorola rf device DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book

Privacy Settings

MOTOROLA RF POWER TRANSISTOR DATA BOOK Search Results

MOTOROLA RF POWER TRANSISTOR DATA BOOK Result Highlights (5)

MOTOROLA RF POWER TRANSISTOR DATA BOOK Datasheets Context Search

VK200 19 4B INDUCTOR

UNELCO

Untitled

motorola rf Power Transistor

Mosfet J49

Mosfet J49

Motorola Power Transistor Data Book

Untitled

Untitled

BAS16

mallory 150 series

ut-85

motorola rf Power Transistor Data Book

MRF6409

Untitled

transistor rf m 1104

905-170

Untitled

NT 407 F power transistor

sp 0937

MRF255 equivalent

Mosfet J49

j718

motorola rf device