tme 126
Abstract: transistor TT 2442 MGW12N120D 3EML
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MGW12N120D/D DATA e Product Preview Data Sheet Insulated Gate BipoMar Transistor with Anti-Parallel Diode N-Channel Enhancement Mode Silicon Gate Ttis Insulated Gate Bipolar Transistor lGB~ is cqackaged
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MGW12N120D/D
MGW12N120DID
tme 126
transistor TT 2442
MGW12N120D
3EML
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MRF328
Abstract: MRF243 mrf245 MRF648 MRF463 Motorola transistors MRF648 MRF460 Barnes RM2A Motorola transistors MRF455 Motorola transistors MRF454
Text: Order this document by AN790/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN790 THERMAL RATING OF RF POWER TRANSISTORS Prepared by: Robert J. Johnsen Reliability is of primary concern to many users of transistors. The degree of reliability achieved is controlled by the device user because he determines the stress levels applied by his circuit and
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AN790/D
AN790
MRF328
MRF243
mrf245
MRF648
MRF463
Motorola transistors MRF648
MRF460
Barnes RM2A
Motorola transistors MRF455
Motorola transistors MRF454
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uhf amplifier design
Abstract: 2N6136 2N5945 Motorola equivalent transistor bc 172 b AN548A j411 Motorola ARCO 465 Compression Trimmer Capacitor 2N5946 MOTOROLA motorola an-282a application AN282A
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN548A/D SEMICONDUCTOR APPLICATION NOTE AN548A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Microstrip Design Techniques for
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AN548A/D
AN548A
uhf amplifier design
2N6136
2N5945 Motorola
equivalent transistor bc 172 b
AN548A
j411 Motorola
ARCO 465 Compression Trimmer Capacitor
2N5946 MOTOROLA
motorola an-282a application
AN282A
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2N6136
Abstract: uhf amplifier design equivalent transistor bc 172 b ARCO 465 Compression Trimmer Capacitor 2N5946 AN-282A Transistor 2274 AN548A AN555 AN282A
Text: Order this document by AN548A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN548A MICROSTRIP DESIGN TECHNIQUES FOR UHF AMPLIFIERS Prepared by: Glenn Young power gain of 16 dB and a bandwidth – 1 dB of 8 MHz. Overall efficiency is 48.5% and all harmonics are a minimum
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AN548A/D
AN548A
2N6136
uhf amplifier design
equivalent transistor bc 172 b
ARCO 465 Compression Trimmer Capacitor
2N5946
AN-282A
Transistor 2274
AN548A
AN555
AN282A
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johanson trim
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M RF160/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET D e s ig n e d p rim a rily fo r w id e b a n d la r g e -s ig n a l o u tp u t an d d riv e r fro m
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RF160/D
johanson trim
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SU 179 transistor
Abstract: SU 179
Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single
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RF275L/D
SU 179 transistor
SU 179
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F 2452 mosfet
Abstract: DV2820 0823L R K J 0822
Text: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •
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RF166C/D
MRF166C
MRF136,
DV2820,
BLF244,
SD1902,
ST1001
F 2452 mosfet
DV2820
0823L
R K J 0822
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz
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MRF177/D
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2N4851
Abstract: 2N4852 UJT 2N4851 transistor 2n4852 2N4853 2n4852 data IEB20 UJT 2N4852 2N4851 transistor
Text: M O T O R O L A SC I D IOD ES/ OP TO 2SE D • b 3 b 7 5 S S QQflQ^aO 1 NOT RECOMMENDED FOR NEW DESIGNS I 2N4851 thru 2N4853 PN U nijunction Transistors Silicon Unijunction Transistors . . . designed for pulse and timing circuits, sensing circuits, and thyristor trigger
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2N4851
2N4853
2N4852
UJT 2N4851
transistor 2n4852
2N4853
2n4852 data
IEB20
UJT 2N4852
2N4851 transistor
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gp20n60
Abstract: transistor fall time MJ10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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O-220
MGP20N60U
CASE221A-09
O-22DAB
GP20N60U
gp20n60
transistor fall time
MJ10
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information High Speed, High Gain Bipolar NPN Power TVansistor w ith Integrated C ollector-E m itter Diode and B uilt-in E fficient A ntisaturation N etw ork POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
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MJE18002D2
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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MGP4N60E
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L9181
Abstract: l6262 Nippon capacitors L 0946
Text: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc
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RF275G/D
L9181
l6262
Nippon capacitors
L 0946
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IN5343
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics
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MRF166W/D
IN5343
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP4N60E/D
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MGP20N
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP20N60U/D
MGP20N60
O-220
21A-09
O-22QAB
MGP20N
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SU 179 transistor
Abstract: Motorola ic 1036 Nippon capacitors
Text: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this
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RF141G/D
SU 179 transistor
Motorola ic 1036
Nippon capacitors
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S2P02
Abstract: S2P02 mosfet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF2P02E Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field E ffect Transistors MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s TMOS process. These miniature surface
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MMSF2P02E
S2P02
S2P02 mosfet
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4116 2n
Abstract: BFG 99
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC
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2N5484
2N9486
4116 2n
BFG 99
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high
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MGP20N60U/D
MGP20N60U
O-220
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BF441
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF Am plifier T ran sistor N-Channel MMBF4416LT1 M otorola Preferred Device 2 SOURCE % 1 DRAIN MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDS 30 Vdc Draln-Gate Voltage vdg 30 Vdc Gate-Source Voltage
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MMBF4416LT1
BF441
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BU3232
Abstract: motorola cm 340 a transistor 323Z darlington type transistor in ignition motorola transistor ignition motorola ignition BU323Z A/motorola transistor ignition
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323Z ‘Motorola Proforrod D«vlc* Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU3232 is a planar, monolithic, high-voltage power Darlington with a built-in active zener clamping circuit. This device is specifically designed for unclamped,
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BU323Z
BU3232
motorola cm 340 a transistor
323Z
darlington type transistor in ignition
motorola transistor ignition
motorola ignition
BU323Z
A/motorola transistor ignition
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52N06V
Abstract: transistor C 2240 GR
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MTB52N06VL TM O S V M otorola Preferred Oevice Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 52 AMPERES 60 VOLTS RDS on = 0.025 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance
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MTB52N06VL
52N06V
transistor C 2240 GR
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18002D2/D SEMICONDUCTOR TECHNICAL DATA MJE18002D2 Advance Information POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith In tegrated C o llecto r-E m itter Diode and B uilt-in Efficient
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MJE18002D2/D
MJE18002D2
MJE18002D2
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