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    MOSFET L 3055 Search Results

    MOSFET L 3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET L 3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXDD 614

    Abstract: BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS
    Text: APPLICATION NOTE AN0002 MOSFET/IGBT DRIVERS THEORY AND APPLICATIONS By Abhijit D. Pathak 1. Introduction 1.1. MOSFET and IGBT Technology. 1.2. MOSFET Models and critical parameters 1.3. Turn-on and Turn-off phenomenon and their explanations 1.4. Power losses in Drivers


    Original     		PDF AN0002 RH159NB D-68623; IXDD 614 BJT de potencia zener diode 1N PH 48 CHN 841 lm339 igbt driver ups transformer winding formula mosfet igbt drivers theory MOSFET IGBT DRIVERS THEORY AND APPLICATIONS chn 614 diod MOSFET IGBT THEORY AND APPLICATIONS

    F7822

    Abstract: bel 100p transistor pin configuration BEL 100p transistor EQUIVALENT diode d1n5819 BEL 100p transistor nx2601 2N3904 c24 ensw1 CON20B d1n5819
    Text: Evaluation board available. NX2601 DUAL SYNCHRONOUS PWM CONTROLLER WITH NMOS LDO CONTROLLER & 5V BIAS REGULATOR PRELIMINARY DATA SHEET Pb Free Product DESCRIPTION The NX2601 controller IC is a triple controller with a dual channel synchronous Buck controller IC and an LDO controller designed for multiple converters such as PCIe


    Original     		PDF NX2601 NX2601 200kHz 20REF 00BSC 50BSC F7822 bel 100p transistor pin configuration BEL 100p transistor EQUIVALENT diode d1n5819 BEL 100p transistor 2N3904 c24 ensw1 CON20B d1n5819

    class d amplifier schematic hip4080

    Abstract: hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S HIP2060 mosfet L 3055 high power fet audio amplifier schematic
    Text: Harris Semiconductor No. AN9539 Harris Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 1-800-4-HARRIS class d amplifier schematic hip4080 hip4080 h-bridge gate drive schematics circuit HIP4080 amplifier circuit diagram class D oscilloscope schematic EAS 200 lem la 50p mosfet p 3055 RM1S mosfet L 3055 high power fet audio amplifier schematic

    class d amplifier schematic hip4080

    Abstract: HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V HIP2060 MO-169AB
    Text: TM No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 class d amplifier schematic hip4080 HIP4080 amplifier circuit diagram class D AN9404 AN9539 mosfet L 3055 1350P AN9405 0-60V MO-169AB

    HIP4080 amplifier circuit diagram class D

    Abstract: class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A
    Text: No. AN9539 Intersil Intelligent Power May 1996 HIP2060, N-Channel Half-Bridge Power MOSFET Array Author: Edwin C. Jabillo Abstract The HIP2060 is a dual MOSFET array topology in a half-bridge configuration which represents a new innovation of power semiconductor devices that integrates two matched power transistors in a chip. The HIP2060 power MOSFET array is an


    Original     		PDF AN9539 HIP2060, HIP2060 HIP4080 amplifier circuit diagram class D class d amplifier schematic hip4080 jfet normally off to220 mosfet L 3055 HIP4080 ITL5-1 dual jfet transistor array AN9404 oscilloscope schematic EAS 200 Switching Power supply with HIP4080A

    transistor c815

    Abstract: c815 transistor transistor D800 APW 7313 transistor c814 C817 C815 transistor apm3055 ut 803B core i5 MOTHERBOARD CIRCUIT diagram
    Text: APW3007 Advanced Dual PWM and Dual Linear Power Controller Features General Description • The APW3007 provides the power control and protection for four output voltage in high-performance microprocessor and computer applications. The APW3007 is designed to provide termination


    Original     		PDF APW3007 APW3007 transistor c815 c815 transistor transistor D800 APW 7313 transistor c814 C817 C815 transistor apm3055 ut 803B core i5 MOTHERBOARD CIRCUIT diagram

    transistor c815

    Abstract: pdf transistor c815 c815 transistor c815 R819 transistor c814 C807 330uf transistor apm3055 equivalent apm3055 TRANSISTOR c816
    Text: APW3007 Advanced Dual PWM and Dual Linear Power Controller Features General Description • The APW3007 provides the power control and protection for four output voltage in high-performance microprocessor and computer applications. The APW3007 is designed to provide termination


    Original     		PDF APW3007 APW3007 transistor c815 pdf transistor c815 c815 transistor c815 R819 transistor c814 C807 330uf transistor apm3055 equivalent apm3055 TRANSISTOR c816

    Untitled

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been


    Original     		PDF FDMS86150

    Untitled

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86150 FDMS86150

    Untitled

    Abstract: No abstract text available
    Text: SGM3055 5.8A , 30V , RDS ON 28 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The GM3055 provide the designer with the best combination of fast switching, ruggedized device design, low


    Original     		PDF SGM3055 OT-89 GM3055 OT-89 29-May-2012

    SSM3055L

    Abstract: MosFET
    Text: SSM3055L 2.8A , 60V , RDS ON 100 mΩ Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SOT-223 The SSM3055L utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original     		PDF SSM3055L OT-223 SSM3055L 3055L 26-Jul-2013 MosFET

    mosfet L 3055

    Abstract: No abstract text available
    Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS86150 FDMS86150 mosfet L 3055

    Untitled

    Abstract: No abstract text available
    Text: SSD3055 18A , 30V , RDS ON 22Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD3055 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSD3055 O-252 SSD3055 30-Apr-2012

    mosfet L 3055 motorola

    Abstract: L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3
    Text: MOTOROLA Order this document by MMFT3055E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT3055E Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET


    Original     		PDF MMFT3055E/D MMFT3055E MMFT3055E/D* mosfet L 3055 motorola L 3055 motorola mosfet L 3055 motorola 3055 3055 sot-223 2N3904 AN569 MMFT3055E MMFT3055ET1 MMFT3055ET3

    OPT05

    Abstract: 1000 watt mosfet power amplifier 1094/BBM2E3KKO 300 watt mosfet amplifier
    Text: As appearing in Microwave Journal, Microwaves & RF and Microwave Product Digest 2008 Rev. 09/08 Empower RF Systems, Inc. ¬ Empower RF Systems, Inc. 316 West Florence Ave. Inglewood, CA 90301 Phone: +1 310 412-8100 Fax: +1 (310) 412-9232 Email: [email protected]


    Original     		PDF

    3055E

    Abstract: D3055 atech
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TD 3055E T M O S IV N-C hannel E nhancem ent-M ode Pow er Field E ffect Transistor DPAK fo r Surface or Insertion M ount TM O S POWER FET 8 AMPERES This advanced " E " series o f TM O S p o w e r MOSFETs is


    OCR Scan     		PDF 3055E Y145M. D3055 atech

    MTP3055EL

    Abstract: 3055el TP3055EL TP3055E
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 3055E L Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate T h is a d v a n c e d E-FET is a T M O S p o w e r M O S F E T d e s ig n e d to w ith s ta n d h ig h e n e rg y in


    OCR Scan     		PDF 3055E MTP3055EL 21A-04 TQ-220AB MTP3055EL 3055el TP3055EL TP3055E

    3055vl

    Abstract: Motorola 3055vl 3055vl motorola
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD 3055VL TMOS V Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new te ch n o lo g y d e sig ned to achieve an o n -re s is tan ce area pro du ct ab ou t o n e -h a lf tha t of stan dard M O SFETs. This


    OCR Scan     		PDF MTD3055VL/D 3055VL 3055vl Motorola 3055vl 3055vl motorola

    Untitled

    Abstract: No abstract text available
    Text: LineAB TECHNOLOGY ltci255 Dua| 24V High-Side MOSFET Driver FCflTUfteS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ The LTC1255 dual high-side driver allows using low cost N-channel FETs for high-side industrial and auto­ motive switching applications. An internal charge pump


    OCR Scan     		PDF lti25 LTC1255 12jjA 1N4148 Z5242B BZ5242B LTC1255

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    mosfet L 3055 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET


    OCR Scan     		PDF OT-223 MMFT3055E mosfet L 3055 motorola

    MOTOROLA 3055V

    Abstract: 3055VL 3055V
    Text: MOTOROLA Order this document by MTD3055VL/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD3055VL TMOS V Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.18 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTD3055VL/D MOTOROLA 3055V 3055VL 3055V

    t3055vl

    Abstract: T30-55VL MC33345
    Text: M MOTOROLA — — — M C33345 Product Preview Lithium B attery Protection Circuit for One to Four Cell B attery Packs The MC33345 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of one to four cell rechargeable


    OCR Scan     		PDF C33345 MC33345 MC33345 t3055vl T30-55VL

    U3055L

    Abstract: logic level mosfet SSR3055L cc1k SSU3055L 824 mosfet diode 824
    Text: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES • • • • • • • D-PAK Lower R ds ON Excellent voltage stability Fast switching sp eed s Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSR3055L/U3055L SSR3055U U3055L SSR3055L SSU3055L ssr3055l/u3055l logic level mosfet SSR3055L cc1k SSU3055L 824 mosfet diode 824