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    MOSFET 10A 800V Search Results

    MOSFET 10A 800V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 10A 800V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: R8010ANX Nch 800V 10A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 0.56W ID 10A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.


    Original     		PDF R8010ANX O-220FM R1102A

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N8at QW-R502-218

    10N80L

    Abstract: 10n80 MOSFET 800V 10A TO-3P mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TC3-T 10N80G-TC3ues QW-R502-218 10N80L MOSFET 800V 10A TO-3P mosfet 10a 800v high power

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T QW-R502-218

    MOSFET 800V 10A TO-3P

    Abstract: 10n80 mosfet 337
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-TF1ues QW-R502-218 MOSFET 800V 10A TO-3P mosfet 337

    mosfet 10a 800v

    Abstract: MOSFET 800V 10A TO-3P 10N80 MOSFET 800V 10A 10N80L mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T 10N80G-T3P-T 10N80L-TF1-T 10N80G-t QW-R502-218 mosfet 10a 800v MOSFET 800V 10A TO-3P MOSFET 800V 10A 10N80L mosfet 10a 800v high power

    MOSFET 800V 10A TO-3P

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N80 Power MOSFET 10A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N80 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is


    Original     		PDF 10N80 10N80 10N80L-T3P-T QW-R502-218 MOSFET 800V 10A TO-3P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA IXFA IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P VDSS ID25 TO-220AB (IXFP) TO-3P (IXFQ) RDS(on) trr G G D S S G D (TAB) DS = 800V = 10A Ω ≤ 1.1Ω


    Original     		PDF IXFA10N80P IXFP10N80P IXFQ10N80P IXFH10N80P O-220AB O-263 250ns O-247

    STU10NB80

    Abstract: No abstract text available
    Text: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE STU10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STU10NB80 Max220 STU10NB80

    U10NB80

    Abstract: 55AV U10NB STU10NB80
    Text: STU10NB80 N - CHANNEL 800V - 0.65Ω - 10A - Max220 PowerMESH MOSFET PRELIMINARY DATA TYPE ST U10NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 0.8 Ω 10 A TYPICAL RDS(on) = 0.65 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STU10NB80 Max220 U10NB80 U10NB80 55AV U10NB STU10NB80

    Untitled

    Abstract: No abstract text available
    Text: SCT2450KE N-channel SiC power MOSFET Datasheet lOutline VDSS 1200V RDS on (Typ.) 450mW ID 10A PD 85W TO-247 (1) (2) (3) lInner circuit lFeatures (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 Body Diode


    Original     		PDF SCT2450KE 450mW O-247 R1102B

    Untitled

    Abstract: No abstract text available
    Text: S2305 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 450mW ID 10A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode


    Original     		PDF S2305 450mW R1102B

    Untitled

    Abstract: No abstract text available
    Text: SCT2450KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 450m ID 10A PD 85W TO-247 (1) (2) (3) Inner circuit (2) Features (1) Gate (2) Drain (3) Source 1) Low on-resistance 2) Fast switching speed *1 (1) 3) Fast reverse recovery


    Original     		PDF SCT2450KE O-247 R1102B

    Untitled

    Abstract: No abstract text available
    Text: APT10090HLL 1000V 10A 0.900Ω POWER MOS 7 R MOSFET TO-258 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10090HLL O-258 O-258

    MOSFET 800V 10A

    Abstract: mosfet 10a 800v mosfet 10a 800v high power F109 FQA10N80C
    Text: QFET FQA10N80C 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA10N80C FQA10N80C MOSFET 800V 10A mosfet 10a 800v mosfet 10a 800v high power F109

    SMK1080

    Abstract: No abstract text available
    Text: SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58nC Typ.  Low drain-source On resistance: RDS(on)=1.1Ω (Max.)  RoHS compliant device  100% avalanche tested


    Original     		PDF SMK1080FD SMK1080 O-220F-3L SDB20D45 14-NOV-12 KSD-T0O113-000 SMK1080

    FS10SM16A

    Abstract: MOSFET 800V 10A FS10SM-16A mosfet 10a 800v
    Text: MITSUBISHI Nch POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 800V


    Original     		PDF FS10SM-16A FS10SM16A MOSFET 800V 10A FS10SM-16A mosfet 10a 800v

    MOSFET 800V 10A

    Abstract: mosfet 10a 800v F109 FQA10N80C
    Text: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA10N80C MOSFET 800V 10A mosfet 10a 800v F109

    Untitled

    Abstract: No abstract text available
    Text: QFET FQA10N80C_F109 800V N-Channel MOSFET Features Description • • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA10N80C

    Untitled

    Abstract: No abstract text available
    Text: STU10NB80 N - CHANNEL 800V - 0.65ft - 10A - Max220 _PowerMESH MOSFET PRELIMINARY DATA TYPE S TU 10N B80 • . . . . V dss R dS oii Id 800 V < 0.8 Q. 10 A TYPICAL R D S (on) = 0.65 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF STU10NB80 Max220 Max220 P011R

    FS10SM16A

    Abstract: FS10SM-16A
    Text: MITSUBISHI Neh POWER MOSFET FS10SM-16A HIGH-SPEED SWITCHING USE FS10SM-16A •800V ■0.98Q 10A • V d s s . • TDS ON (MAX) • I D . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­


    OCR Scan     		PDF FS10SM-16A FS10SM16A FS10SM-16A

    D1F40

    Abstract: S1ZB40 200v 10A mosfet diode 2f D1F10 DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68
    Text: h7>yX^ T ra n sisto r Vi KO 2 S A l 795 2SA1796 2SC4668 2SC4669 -5A -7A 7A 10A MOSFET R e ctifie r Diode Vi is s Id 0.5A 1.0A 1.0A 1.5A V rm Io 1.0A 1.1A 1.4 A Bridge Diode_ V rm 10 0.8A S c h o ttk y B a rrie r Diode ' Io V rm 1.1A 1.6A 3 .0 A


    OCR Scan     		PDF 2SA1796 2SC4668 2SC4669 2SK1194 2SK1672 2SK1533 2SK1195 D1F10 D2F10 D1F20 D1F40 S1ZB40 200v 10A mosfet diode 2f DIODE D1F20 S1ZA40 diode rm 62 mosfet 600V 30A S1WB S 40 68

    MOSFET 800V 10A

    Abstract: ssf10n80a Tc-25-t
    Text: SSF10N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS= 800V


    OCR Scan     		PDF SSF10N80A MOSFET 800V 10A ssf10n80a Tc-25-t

    SSH10N80A

    Abstract: 10N80A 1017 mosfet
    Text: SSH1 0 N8 0 A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology 800 V BVpss ~ ^DS on = Lower Input Capacitance Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA (M ax.) @ VDS= 800V


    OCR Scan     		PDF SSH10N80A SSH10N80A 10N80A 1017 mosfet