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    MOSFET 10A 600V Search Results

    MOSFET 10A 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK6012DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 920Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    RJL6012DPE-00#J3 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 1100Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    RJK6012DPP-E0#T2 Renesas Electronics Corporation Nch Single Power Mosfet 600V 10A 920Mohm To-220Fp Visit Renesas Electronics Corporation
    RJK6012DPP-A0#T2 Renesas Electronics Corporation 600V - 10A - MOSFET High Speed Power Switching, TO-220FPA, /Tube Visit Renesas Electronics Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 10A 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F11NM60N

    Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
    Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V


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    PDF STD11NM60N STD11NM60N-1 STP11NM60N STF11NM60N O-220 O-220FP- STD11NM60N STP11NM60N F11NM60N f11nm60 p11nm60 JESD97 STD11NM60N-1 STF11NM60N f11n

    p10nk60

    Abstract: p10nk60z p10nk60zfp B10n STP10NK60ZFP
    Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @T jMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V


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    PDF STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP STW10NK60Z O-220/FP O-247 STB10NK60Z-1 STB10NK60Z p10nk60 p10nk60z p10nk60zfp B10n

    p10nk60

    Abstract: p10nk60zfp VDD-300 STP10NK60ZFP B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z
    Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @TjMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V


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    PDF STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP STW10NK60Z O-220/FP O-247 STB10NK60Z-1 STB10NK60Z STP10NK60ZFP p10nk60 p10nk60zfp VDD-300 B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z

    f11nm60

    Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
    Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V


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    PDF STD11NM60N STD11NM60N-1 STP11NM60N STF11NM60N O-220 O-220FP- STD11NM60N STP11NM60N f11nm60 F11NM60N p11nm60n STD11NM60N-1 p11nm60 JESD97 STF11NM60N

    P12NM60

    Abstract: F12NM60N STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
    Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω


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    PDF STB12NM60N/-1 STF12NM60N STP12NM60N STW12NM60N O-220/FP O-247 STB12NM60N STB12NM60N-1 STP12NM60N P12NM60 F12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N

    F12NM60N

    Abstract: STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
    Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω


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    PDF STB12NM60N/-1 STF12NM60N STP12NM60N STW12NM60N O-220/FP O-247 STB12NM60N STB12NM60N-1 STP12NM60N F12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N

    P12NM60

    Abstract: No abstract text available
    Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω


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    PDF STB12NM60N/-1 STF12NM60N STP12NM60N STW12NM60N O-220/FP O-247 STB12NM60N STB12NM60N-1 STP12NM60N P12NM60

    P12NM60

    Abstract: STP12NM60N
    Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω


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    PDF STB12NM60N/-1 STF12NM60N STP12NM60N STW12NM60N O-220/FP O-247 STB12NM60N STB12NM60N-1 P12NM60

    P12NM60

    Abstract: F12NM60N STF12NM60N
    Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω


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    PDF STB12NM60N/-1 STF12NM60N STP12NM60N STW12NM60N O-220/FP O-247 STB12NM60N STB12NM60N-1 P12NM60 F12NM60N

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


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    PDF 10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


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    PDF 10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743

    10N60K

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


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    PDF 10N60K 10N60K O-220F QW-R502-743

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


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    PDF 10N60K 10N60K O-220F O-220F1 QW-R502-743

    10N60G

    Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


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    PDF 10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l

    tf 10n60

    Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


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    PDF 10N60 10N60 QW-R502-119 tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet

    10N60G TO-220F

    Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


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    PDF 10N60 10N60 QW-R502-119 10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l

    AOTF10N60

    Abstract: VA36 MOSFET 700V 10A AOTF10N6
    Text: AOT10N60 / AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608 General Description Features The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance


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    PDF AOT10N60 AOTF10N60 AOT9608/AOTF9608 AOT10N60 AOTF10N60 O-220 O-220F VA36 MOSFET 700V 10A AOTF10N6

    Mosfet

    Abstract: SSF10N60
    Text: SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.69Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and


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    PDF SSF10N60 O-220 inN60 Mosfet SSF10N60

    AOTF10N60

    Abstract: No abstract text available
    Text: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


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    PDF AOT10N60/AOTF10N60 AOT10N60 AOTF10N60 AOT10N60L AOTF10N60L O-220 O-220F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


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    PDF 10N60Z-Q 10N60Z-Q 10N60ZL-TF1-T 10N60ZG-TF1-T QW-R502-B05

    AOTF10N60

    Abstract: No abstract text available
    Text: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


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    PDF AOT10N60/AOTF10N60 AOT10N60 AOTF10N60 O-220 O-220F

    Mosfet

    Abstract: SSF10N60F
    Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and


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    PDF SSF10N60F O220F dev60F Mosfet SSF10N60F

    AOWF10N60

    Abstract: 262F
    Text: AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


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    PDF AOW10N60/AOWF10N60 AOW10N60 AOWF10N60 O-262 O-262F 262F

    sono2

    Abstract: mosfet 600V 10A ic
    Text: MITSUBISHI Neh POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK1OKM-12 • Voss . 600V • rDS ON (MAX) .1.18Í2 • Id . 10A


    OCR Scan
    PDF FK10KM-12 FK1OKM-12 150ns UJ10l/l sono2 mosfet 600V 10A ic